Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: Methods for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: One embodiment of the present subject matter includes a system which includes a tank, a conduit is adapted to carry a recirculating supply of fluid from the tank and into the tank, and at least one injector adapted to dispense fluid from the recirculating supply of fluid into a chamber.

Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

Abstract: One embodiment of the present subject matter includes a system which includes a tank, a conduit is adapted to carry a recirculating supply of fluid from the tank and into the tank, and at least one injector adapted to dispense fluid from the recirculating supply of fluid into a chamber.

Abstract: In the typical embodiments described in the specification, a rolling element bearing arrangement includes an inner raceway with a curved outer surface facing in one lateral direction, an outer raceway with a curved inner surface facing in the opposite lateral direction, an array of rolling elements such as balls engaging the curved surfaces of the inner and outer raceways, a retaining ring in which the array of balls is received, and a retaining ring stabilizer urging the retaining ring in a lateral direction with respect to one of the raceways to inhibit vibration of the components. In addition, a vibration inhibiting outer ring member which may contain a heavy metal or a resilient material, is retained against the outer surface of the outer raceway by a composite wrap which may be a fiber-reinforced organic or inorganic polymer composite made by a dry layup, resin transfer molding, wet filament winding or preimpreganted filament winding technique.

Abstract: In the typical embodiments described in the specification, a rolling element bearing arrangement includes an inner raceway with a curved outer surface facing in one lateral direction, an outer raceway with a curved inner surface facing in the opposite lateral direction, an array of rolling elements such as balls engaging the curved surfaces of the inner and outer raceways, a retaining ring in which the array of balls is received, and a retaining ring stabilizer urging the retaining ring in a lateral direction with respect to one of the raceways to inhibit vibration of the components. In addition, a vibration inhibiting outer ring member which may contain a heavy metal or a resilient material, is retained against the outer surface of the outer raceway by a composite wrap which may be a fiber-reinforced organic or inorganic polymer composite made by a dry layup, resin transfer molding, wet filament winding or preimpreganted filament winding technique.

Abstract: A vaporizing apparatus for providing a vaporized precursor for a vapor deposition process includes a dispensing device for providing precursor spray having a first electrical charge into a vaporization zone. The apparatus further includes a heated element in the vaporization zone having a second electrical charge opposite of the first charge. The heated element vaporizes the precursor spray attracted thereto. The dispensing device may be an electrostatic spray device for spraying a powdered precursor, a mixture of powdered precursors, one or more powdered precursors cut with an inert filler material, one or more liquid precursors adsorbed on solid particles, one or more gas precursors adsorbed on solid particles, a liquid precursor, a mixture of liquid precursors, or one or more solid precursors dissolved in one or more solvents. A method of vaporizing precursors for vapor deposition processes includes providing a precursor spray having a first electrical charge.

Abstract: Particle traps for semiconductor wafer vapor processors and methods of filtering particles in a semiconductor wafer processor are described. In accordance with a preferred implementation, a semiconductor wafer processor includes a processing chamber for containing a gas during processing of a semiconductor wafer. A particle trap is positioned within the reaction chamber and is operative for removing particles within the processing chamber. In one version, the particle trap is an electrostatic precipitator charged for removing particles from the gas. In accordance with another implementation, a semiconductor wafer vapor processor includes a processing chamber for containing a gas during processing of a semiconductor wafer. A wafer holder is provided within the processing chamber. A particle trap comprising at least two chargeable elements is positioned within the processing chamber and is spaced from the wafer holder. In one version, the processing chamber is a reaction chamber.

Abstract: An apparatus and method are provided for effectively and controllably vaporizing solid material, in general, and specifically, solid precursor material for chemical phase deposition processes. The apparatus includes a hollow container member, capable of retaining solid material and having a longitudinal axis passing through a substantially open first end, that is reciprocally injected at a controlled rate through a heater capable of vaporizing the solid material so that vaporized material passes through the first end along the longitudinal axis of the container member and into the reaction chamber. Preferably, the apparatus includes a hollow body capable of pressure containment that is in fluid communication with the reaction chamber and an rod-shaped injector slidably disposed through the hollow body suitable for injecting the container member through the body and the injector is driven external to the body using a stepper motor.

Abstract: An apparatus and method are provided for effectively and controllably vaporizing solid material, in general, and specifically, solid precursor material for chemical phase deposition processes. The apparatus includes a hollow container member, capable of retaining solid material and having a longitudinal axis passing through a substantially open first end, that is reciprocally injected at a controlled rate through a heater capable of vaporizing the solid material so that vaporized material passes through the first end along the longitudinal axis of the container member and into the reaction chamber. Preferably, the apparatus includes a hollow body capable of pressure containment that is in fluid communication with the reaction chamber and an rod-shaped injector slidably disposed through the hollow body suitable for injecting the container member through the body and the injector is driven external to the body using a stepper motor.

Abstract: A chemical vapor deposition method of providing a layer of material atop a semiconductor substrate using an organometallic or metal-organic precursor in a manner which minimizes carbon incorporation in the layer includes, a) positioning a substrate within a chemical vapor deposition reactor; b) providing a gaseous precursor within the reactor having the substrate positioned therein, the precursor comprising one or a combination of tetrakisdimethylamidotitanium, cyclopentadienylcycloheptatrienyltitanium (CpTiCht), bis(2,4-dimethyl-1,3-pentadienyl)titanium (BDPT), and biscyclopentadienyltitanium diazide (Cp.sub.2 Ti(N.sub.3).sub.

Abstract: An apparatus and method are provided for effectively and controllably vaporizing solid material, in general, and specifically, solid precursor material for chemical phase deposition processes. The apparatus includes a hollow container member, capable of retaining solid material and having a longitudinal axis passing through a substantially open first end, that is reciprocally injected at a controlled rate through a heater capable of vaporizing the solid material so that vaporized material passes through the first end along the longitudinal axis of the container member and into the reaction chamber. Preferably, the apparatus includes a hollow body capable of pressure containment that is in fluid communication with the reaction chamber and an rod-shaped injector slidably disposed through the hollow body suitable for injecting the container member through the body and the injector is driven external to the body using a stepper motor.

Abstract: A chemical vapor deposition method of providing a layer of material atop a semiconductor substrate using an organometallic or metal-organic precursor in a manner which minimizes carbon incorporation in the layer includes, a) positioning a substrate within a chemical vapor deposition reactor; b) providing a gaseous precursor within the reactor having the substrate positioned therein, the precursor comprising one or a combination of tetrakisdimethylamidotitanium, cyclopentadienylcycloheptatrienyltitanium (CpTiCht), bis(2,4-dimethyl-1,3-pentadienyl)titanium (BDPT), and biscyclopentadienyltitanium diazide (Cp.sub.2 Ti(N.sub.3).sub.

Abstract: A vapor delivery system for vaporization and delivery of a solid precursor includes a housing having an inlet for receiving a carrier gas. A rotatable substrate surface is contained in the housing having a solid precursor material applied thereon. A focused thermal beam is positioned for impingement on the solid precursor material. A drive mechanism moves one of the rotatable surface and the focused thermal beam relative to the other such that with rotation of the rotatable substrate surface the focused thermal beam continuously impinges on a different contact area of the solid precursor material for vaporization thereof. The housing further has an outlet for transport of the vaporized precursor material therefrom. The rotatable surface may be a cylindrical surface or a circular platen surface. A CVD system having a vapor delivery system is also provided along with a device for use in the delivery system.