Patents by Inventor David R. Boris
David R. Boris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230278896Abstract: Apparatus and method for decontaminating both contaminated waters and sorbent filter media, either separately or simultaneously, in a single system. Contaminants in a liquid flowing through a reaction chamber are removed by first generating a plasma within the liquid in the chamber, with the contaminants being broken into smaller particles at the interfaces between the generated plasma and the liquid. The combined plasma-liquid solution is then passed through a solid filter, which captures the smaller contaminant particles to decontaminate the liquid. To decontaminate the filter media, plasma flows through the filter material without the presence of liquid, the plasma reacting with the filter material to remove contaminants previously adsorbed by the filter.Type: ApplicationFiled: March 3, 2023Publication date: September 7, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Scott G. Walton, William A. Maza, Michael J. Johnson, David R. Boris, Vanessa M. Breslin, Grant C. Daniels, Robert B. Balow
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Patent number: 11626291Abstract: Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF6/H2O or Ar/SF6/NH3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.Type: GrantFiled: June 28, 2022Date of Patent: April 11, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: David R. Boris, Scott G. Walton
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Publication number: 20220328322Abstract: Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF6/H2O or Ar/SF6/NH3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.Type: ApplicationFiled: June 28, 2022Publication date: October 13, 2022Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: David R. Boris, Scott G. Walton
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Patent number: 11404280Abstract: Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF6/H2O or Ar/SF6/NH3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.Type: GrantFiled: October 26, 2020Date of Patent: August 2, 2022Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: David R. Boris, Scott G. Walton
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Publication number: 20210082687Abstract: Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF6/H2O or Ar/SF6/NH3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.Type: ApplicationFiled: October 26, 2020Publication date: March 18, 2021Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: David R. Boris, Scott G. Walton
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Patent number: 10854441Abstract: Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF6/H2O or Ar/SF6/NH3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.Type: GrantFiled: June 4, 2019Date of Patent: December 1, 2020Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: David R. Boris, Scott G. Walton
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Publication number: 20190378691Abstract: Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF6/H2O or Ar/SF6/NH3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.Type: ApplicationFiled: June 4, 2019Publication date: December 12, 2019Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: David R. Boris, Scott G. Walton
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Patent number: 9984860Abstract: An apparatus and methods to increase and direct the spatial volume of atmospheric pressure plasma jets. One or more additional gas flows is introduced to intersect the plasma jet. As the plasma jet interacts with these additional gas flows, the direction of propagation of the plasma jet is altered, the plasma expands into the volume defined by the additional gas flow, and the volume and effective surface area of the plasma jet increases accordingly, while the power increase needed to drive the increase in plasma volume scales sub-linearly with the increase in volume.Type: GrantFiled: October 27, 2017Date of Patent: May 29, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Scott G. Walton, David R. Boris, Tzvetelina Petrova, Eric D. Gillman
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Publication number: 20180130641Abstract: An apparatus and methods to increase and direct the spatial volume of atmospheric pressure plasma jets. One or more additional gas flows is introduced to intersect the plasma jet. As the plasma jet interacts with these additional gas flows, the direction of propagation of the plasma jet is altered, the plasma expands into the volume defined by the additional gas flow, and the volume and effective surface area of the plasma jet increases accordingly, while the power increase needed to drive the increase in plasma volume scales sub-linearly with the increase in volume.Type: ApplicationFiled: October 27, 2017Publication date: May 10, 2018Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Scott G. Walton, David R. Boris, Tzvetelina Petrova, Eric D. Gillman
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Patent number: 8190366Abstract: An apparatus and method for determining plasma parameters such as plasma electron density ne. The probe apparatus includes an LC resonance probe comprising an inductive element and a capacitive element connected in series. The capacitive element of the probe can be in the form of a parallel plate capacitor, a cylindrical capacitor, a spherical capacitor, or any other suitable capacitor. The configuration of the probe apparatus gives it a characteristic resonance frequency ?R0 which can be determined by a circuit analysis device. When the capacitive element of the probe apparatus is placed in a plasma, the probe exhibits a new resonance frequency ?R, which is different from ?R0 because of the dielectric constant ? of the plasma. The difference in resonance frequencies can be used to determine plasma density ne, where n e = m e ? ? 0 e 2 ? ( ? R 2 - ? R ? ? 0 2 ) .Type: GrantFiled: September 30, 2011Date of Patent: May 29, 2012Assignee: The United States of America, as represented by the Secretary of the NavyInventors: David R. Boris, David D. Blackwell, David N. Walker, Richard F. Fernsler, Scott G. Walton
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Publication number: 20120084046Abstract: An apparatus and method for determining plasma parameters such as plasma electron density ne. The probe apparatus includes an LC resonance probe comprising an inductive element and a capacitive element connected in series. The capacitive element of the probe can be in the form of a parallel plate capacitor, a cylindrical capacitor, a spherical capacitor, or any other suitable capacitor. The configuration of the probe apparatus gives it a characteristic resonance frequency ?R0 which can be determined by a circuit analysis device. When the capacitive element of the probe apparatus is placed in a plasma, the probe exhibits a new resonance frequency ?R, which is different from ?R0 because of the dielectric constant ? of the plasma. The difference in resonance frequencies can be used to determine plasma density ne, when n e = m e ? ? 0 e 2 ? ( ? R 2 - ? R ? ? 0 2 ) .Type: ApplicationFiled: September 30, 2011Publication date: April 5, 2012Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: David R. Boris, David D. Blackwell, David N. Walker, Richard F. Fernsler, Scott G. Walton