Patents by Inventor David R. Capewell

David R. Capewell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making silicon on sapphire field effect transistors with specifically aligned gates
    Patent number: 4131496
    Abstract: The method comprises forming a blind hole in a sapphire substrate using a sulfur hexafluoride gas etchant and an etch mask comprising a single layer of silicon nitride. The blind holes are filled with epitaxially grown silicon and field effect transistors are laid out with their gates orthogonal to a line which is at a 45.degree. angle to a standard wafer flat, i.e. orthogonal to the projection of the "c" axis onto the "r" plane of the sapphire wafer.
    Type: Grant
    Filed: December 15, 1977
    Date of Patent: December 26, 1978
    Assignee: RCA Corp.
    Inventors: Charles E. Weitzel, David R. Capewell