Abstract: A method in a plasma processing system having a top electrode and a bottom electrode for etching through a portion of a selected layer of a layer stack of a wafer. The method includes the step of etching at least partially through the selected layer while providing a first radio frequency (RF) signal having a first RF frequency to the top electrode. The method further includes the step of providing a second RF signal having a second RF frequency lower than the first RF frequency to the bottom electrode.

Abstract: An electrostatic chuck system having an electrostatic chuck for securely holding a wafer on a surface of the electrostatic chuck. The electrostatic chuck system comprises a wafer bias sensor coupled to a first portion of the electrostatic chuck for sensing an alternating current signal at the first portion. The wafer bias sensor outputs, responsive to the alternating current signal, a direct current voltage level representative of a direct current bias level of the wafer. The electrostatic chuck system further comprises a variable electrostatic chuck power supply coupled to the wafer bias sensor. The variable electrostatic chuck power supply provides a first potential level to the first portion of the electrostatic chuck.