Patents by Inventor David R. Myers

David R. Myers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250009841
    Abstract: In certain embodiment, this disclosure relates to methods of treating, preventing, or aiding in the diagnosis of a patient having a risk of excessive bleeding. In certain embodiment, the patient is at risk of excessive bleeding due to a platelet disorder or autoimmune disorder. In certain embodiments, this disclosure relates to treatment methods comprising administering an effective amount of an agent that binds specific segments of the alpha subunit or beta subunit of an ?IIb?3 integrin complex to a subject in need thereof.
    Type: Application
    Filed: July 8, 2024
    Publication date: January 9, 2025
    Inventors: Wilbur A. Lam, Oluwamayokun Oshinowo, David R. Myers, Carolyn M. Bennett, Renhao Li
  • Patent number: 8026485
    Abstract: An infrared sensor with at least one cantilever beam functionalized with chitin, chitosan or their derivatives that can be tailored to be sensitive to certain IR bands for detection and does not require cooling is described. The functional layers expand differently than the structural layer of the cantilever beam causing the beam to bend in response to exposure to infrared radiation. The sensor can be adapted to optical, piezoresistive, capacitive and piezoelectric methods of detect beam deflection. Sensitivity can be increased with a reflective layer to increase the absorption of infrared radiation by the functional layer.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: September 27, 2011
    Assignee: The Regents of the University of California
    Inventors: Michael T. Mueller, Albert P. Pisano, Robert Azevedo, David C. Walther, David R. Myers, Matthew Wasilik
  • Publication number: 20100243904
    Abstract: An infrared sensor with at least one cantilever beam functionalized with chitin, chitosan or their derivatives that can be tailored to be sensitive to certain IR bands for detection and does not require cooling is described. The functional layers expand differently than the structural layer of the cantilever beam causing the beam to bend in response to exposure to infrared radiation. The sensor can be adapted to optical, piezoresistive, capacitive and piezoelectric methods of detect beam deflection. Sensitivity can be increased with a reflective layer to increase the absorption of infrared radiation by the functional layer.
    Type: Application
    Filed: March 16, 2010
    Publication date: September 30, 2010
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Michael T. Mueller, Albert P. Pisano, Robert Azevedo, David C. Walther, David R. Myers, Matthew Wasilik
  • Patent number: 5691563
    Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
    Type: Grant
    Filed: September 12, 1995
    Date of Patent: November 25, 1997
    Assignee: Sandia National Laboratories
    Inventors: Steven R. J. Brueck, David R. Myers, Ashwani K. Sharma
  • Patent number: 5449945
    Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
    Type: Grant
    Filed: January 15, 1993
    Date of Patent: September 12, 1995
    Assignee: The United States of America as represented by the U.S. Department of Energy
    Inventors: Steven R. J. Brueck, David R. Myers, Ashwani K. Sharma
  • Patent number: 5102825
    Abstract: Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.
    Type: Grant
    Filed: March 28, 1991
    Date of Patent: April 7, 1992
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Thomas M. Brennan, Burrell E. Hammons, David R. Myers, Gregory A. Vawter
  • Patent number: 5092957
    Abstract: The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.
    Type: Grant
    Filed: November 24, 1989
    Date of Patent: March 3, 1992
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Carol I. H. Ashby, David R. Myers
  • Patent number: 5048038
    Abstract: A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.
    Type: Grant
    Filed: January 25, 1990
    Date of Patent: September 10, 1991
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Thomas M. Brennan, Burrell E. Hammons, David R. Myers, Gregory A. Vawter
  • Patent number: 4880493
    Abstract: An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material.
    Type: Grant
    Filed: June 16, 1988
    Date of Patent: November 14, 1989
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Carol I. H. Ashby, David R. Myers, Frederick L. Vook
  • Patent number: 4866498
    Abstract: The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissiThe U.S. Government has rights in this invention pursuant to Contract No. DE-ACO4-76DP00789 between the Department of Energy and AT&T Technologies, Inc.
    Type: Grant
    Filed: April 20, 1988
    Date of Patent: September 12, 1989
    Assignee: The United States Department of Energy
    Inventor: David R. Myers
  • Patent number: 4746189
    Abstract: An article suitable for use in the adhesive joining of two optical fibers with low light loss comprises a tubular container an inner surface of which is coated with a release agent and/or is composed of an inherently releasing material, which is larger in cross-section at the ends than at a central region, the smaller central region being where the ends of the fibers are joined.
    Type: Grant
    Filed: October 16, 1985
    Date of Patent: May 24, 1988
    Assignee: Raychem Corporation
    Inventors: John P. Arrington, Nelson M. Shen, Wendell W. Moyer, David R. Myers, David E. James
  • Patent number: 4470603
    Abstract: A silhouette archery target includes one or more support legs which are supportably received in respective support holes in a base member. The legs and holes are cross-sectionally configured to preclude rotation of the leg in the hole. A rear pivot block is secured to the leg at the base member top surface and has a rearward bottom edge which is located below the center of gravity of the target and serves as a target pivot axis. The forward-facing side of the leg is cut away from just below the top surface of the base member in a manner which permits backward rotation of the target and leg out of the support hole and about the target pivot axis. By selecting the front-to-back depth dimension of the pivot block, one can select the required impact force which causes the target to rotate out of the support hole and topple over. A forward bias block is secured to the leg at the base member top surface to prevent wind directed at the back of the target from toppling the target out of the base member.
    Type: Grant
    Filed: March 22, 1983
    Date of Patent: September 11, 1984
    Inventor: David R. Myers
  • Patent number: 4460215
    Abstract: A lightweight, compact flight attendant's folding seat assembly is mounted by a plurality of separate brackets to a wall in an aircraft cabin such that the well serves as a connective support structure for various subcomponents of the seat assembly. When the seat pan is pulled down into an open position against a seat return spring, cams actuated by a seat pan frame push forward on a swingably mounted seat back frame forcing the seat back into a downwardly and forwardly sloping seating orientation. The seat back frame and cooperating cams are constructed and arranged in such a way that any rearward force exerted by the occupant against the seat back frame is reacted through the cams into the supporting wall, via the mounting brackets, wherein the intervening cams transmit the load in compression and without being subjected to rotative moment so that the seat pan is not forced to close on the seated occupant.
    Type: Grant
    Filed: September 30, 1981
    Date of Patent: July 17, 1984
    Assignee: The Boeing Company
    Inventors: Michael J. Chamberlain, David R. Myers, Donald R. Furlong
  • Patent number: D271731
    Type: Grant
    Filed: September 30, 1981
    Date of Patent: December 13, 1983
    Assignee: The Boeing Company
    Inventors: Michael J. Chamberlain, David R. Myers, Donald R. Furlong