Patents by Inventor David R. Myers
David R. Myers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250009841Abstract: In certain embodiment, this disclosure relates to methods of treating, preventing, or aiding in the diagnosis of a patient having a risk of excessive bleeding. In certain embodiment, the patient is at risk of excessive bleeding due to a platelet disorder or autoimmune disorder. In certain embodiments, this disclosure relates to treatment methods comprising administering an effective amount of an agent that binds specific segments of the alpha subunit or beta subunit of an ?IIb?3 integrin complex to a subject in need thereof.Type: ApplicationFiled: July 8, 2024Publication date: January 9, 2025Inventors: Wilbur A. Lam, Oluwamayokun Oshinowo, David R. Myers, Carolyn M. Bennett, Renhao Li
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Patent number: 8026485Abstract: An infrared sensor with at least one cantilever beam functionalized with chitin, chitosan or their derivatives that can be tailored to be sensitive to certain IR bands for detection and does not require cooling is described. The functional layers expand differently than the structural layer of the cantilever beam causing the beam to bend in response to exposure to infrared radiation. The sensor can be adapted to optical, piezoresistive, capacitive and piezoelectric methods of detect beam deflection. Sensitivity can be increased with a reflective layer to increase the absorption of infrared radiation by the functional layer.Type: GrantFiled: March 16, 2010Date of Patent: September 27, 2011Assignee: The Regents of the University of CaliforniaInventors: Michael T. Mueller, Albert P. Pisano, Robert Azevedo, David C. Walther, David R. Myers, Matthew Wasilik
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Publication number: 20100243904Abstract: An infrared sensor with at least one cantilever beam functionalized with chitin, chitosan or their derivatives that can be tailored to be sensitive to certain IR bands for detection and does not require cooling is described. The functional layers expand differently than the structural layer of the cantilever beam causing the beam to bend in response to exposure to infrared radiation. The sensor can be adapted to optical, piezoresistive, capacitive and piezoelectric methods of detect beam deflection. Sensitivity can be increased with a reflective layer to increase the absorption of infrared radiation by the functional layer.Type: ApplicationFiled: March 16, 2010Publication date: September 30, 2010Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Michael T. Mueller, Albert P. Pisano, Robert Azevedo, David C. Walther, David R. Myers, Matthew Wasilik
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Patent number: 5691563Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.Type: GrantFiled: September 12, 1995Date of Patent: November 25, 1997Assignee: Sandia National LaboratoriesInventors: Steven R. J. Brueck, David R. Myers, Ashwani K. Sharma
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Patent number: 5449945Abstract: Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.Type: GrantFiled: January 15, 1993Date of Patent: September 12, 1995Assignee: The United States of America as represented by the U.S. Department of EnergyInventors: Steven R. J. Brueck, David R. Myers, Ashwani K. Sharma
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Patent number: 5102825Abstract: Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.Type: GrantFiled: March 28, 1991Date of Patent: April 7, 1992Assignee: The United States of America as represented by the United States Department of EnergyInventors: Thomas M. Brennan, Burrell E. Hammons, David R. Myers, Gregory A. Vawter
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Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching
Patent number: 5092957Abstract: The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.Type: GrantFiled: November 24, 1989Date of Patent: March 3, 1992Assignee: The United States of America as represented by the United States Department of EnergyInventors: Carol I. H. Ashby, David R. Myers -
Patent number: 5048038Abstract: A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.Type: GrantFiled: January 25, 1990Date of Patent: September 10, 1991Assignee: The United States of America as represented by the United States Department of EnergyInventors: Thomas M. Brennan, Burrell E. Hammons, David R. Myers, Gregory A. Vawter
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Patent number: 4880493Abstract: An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material.Type: GrantFiled: June 16, 1988Date of Patent: November 14, 1989Assignee: The United States of America as represented by the United States Department of EnergyInventors: Carol I. H. Ashby, David R. Myers, Frederick L. Vook
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Patent number: 4866498Abstract: The sensitivity of an integrated circuit to single-event upsets is decreased by providing a dissiThe U.S. Government has rights in this invention pursuant to Contract No. DE-ACO4-76DP00789 between the Department of Energy and AT&T Technologies, Inc.Type: GrantFiled: April 20, 1988Date of Patent: September 12, 1989Assignee: The United States Department of EnergyInventor: David R. Myers
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Patent number: 4746189Abstract: An article suitable for use in the adhesive joining of two optical fibers with low light loss comprises a tubular container an inner surface of which is coated with a release agent and/or is composed of an inherently releasing material, which is larger in cross-section at the ends than at a central region, the smaller central region being where the ends of the fibers are joined.Type: GrantFiled: October 16, 1985Date of Patent: May 24, 1988Assignee: Raychem CorporationInventors: John P. Arrington, Nelson M. Shen, Wendell W. Moyer, David R. Myers, David E. James
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Patent number: 4470603Abstract: A silhouette archery target includes one or more support legs which are supportably received in respective support holes in a base member. The legs and holes are cross-sectionally configured to preclude rotation of the leg in the hole. A rear pivot block is secured to the leg at the base member top surface and has a rearward bottom edge which is located below the center of gravity of the target and serves as a target pivot axis. The forward-facing side of the leg is cut away from just below the top surface of the base member in a manner which permits backward rotation of the target and leg out of the support hole and about the target pivot axis. By selecting the front-to-back depth dimension of the pivot block, one can select the required impact force which causes the target to rotate out of the support hole and topple over. A forward bias block is secured to the leg at the base member top surface to prevent wind directed at the back of the target from toppling the target out of the base member.Type: GrantFiled: March 22, 1983Date of Patent: September 11, 1984Inventor: David R. Myers
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Patent number: 4460215Abstract: A lightweight, compact flight attendant's folding seat assembly is mounted by a plurality of separate brackets to a wall in an aircraft cabin such that the well serves as a connective support structure for various subcomponents of the seat assembly. When the seat pan is pulled down into an open position against a seat return spring, cams actuated by a seat pan frame push forward on a swingably mounted seat back frame forcing the seat back into a downwardly and forwardly sloping seating orientation. The seat back frame and cooperating cams are constructed and arranged in such a way that any rearward force exerted by the occupant against the seat back frame is reacted through the cams into the supporting wall, via the mounting brackets, wherein the intervening cams transmit the load in compression and without being subjected to rotative moment so that the seat pan is not forced to close on the seated occupant.Type: GrantFiled: September 30, 1981Date of Patent: July 17, 1984Assignee: The Boeing CompanyInventors: Michael J. Chamberlain, David R. Myers, Donald R. Furlong
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Patent number: D271731Type: GrantFiled: September 30, 1981Date of Patent: December 13, 1983Assignee: The Boeing CompanyInventors: Michael J. Chamberlain, David R. Myers, Donald R. Furlong