Patents by Inventor David Rensch

David Rensch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
    Patent number: 5079179
    Abstract: A GaAs circuit structure is described which interposes a Langmuir-Blodgett (L-B) layer between the substrate and a conductive contact. The thickness of the layer is controlled to determine the operating characteristics of the device. The head group of the L-B molecule is chosen so that it passivates the surface states of the particular GaAs substrate being used. Certain preferred acids and amino head groups are disclosed. The L-B layer has been found to both increase the gate barrier height for an FET, and to passivate dangling bonds and surfaces defects in the GaAs substrate to enable inversion mode operation. Specific FET and diode devices are described.
    Type: Grant
    Filed: November 27, 1990
    Date of Patent: January 7, 1992
    Assignee: Hughes Aircraft Company
    Inventors: Jack Josefowicz, David Rensch, Vladimir Rodov, Meir Bartur, Debra Marr-Leisy