Abstract: A high-power, high frequency (1–100 GHz) power amplifier, made using SiGe transistors. A differential common-emitter amplifier section supplies the voltage amplification, allowing the total voltage swing of the amplifier to be twice the breakdown voltage of the individual transistors. Current amplification is supplied by a differential common-emitter amplifier section, connected in cascode with the differential common-emitter amplifier section. Appropriately chosen resonators in the cascode connection resonate out the Miller effect, negative current feed back of the circuit at the amplifier's operational frequency, allowing the amplifier to provide high power output at the operational frequency.

Abstract: A new class A/F amplifier has an filtering and matching input circuit, a summing junction, an amplifying circuit, a filtering and feedback biasing circuit, and an output filtering and matching circuit. The filtering and matching input circuit responds to a radio frequency access input signal, for providing a filtered and matched radio frequency access input signal. The summing junction responds to the filtered and matched radio frequency access input signal, and further responds to a filtering and feedback biasing signal, for providing a summed, filtered, matched and feedback radio frequency access input signal. The amplifying circuit responds to the summed filtered, matched and feedback radio frequency access input signal, for providing an amplified, summed, filtered, matched and feedback radio frequency access input signal.