Abstract: Disclosed are methods of making a semiconductor package comprising at least one thin-film capacitor embedded into at least one build-up layer of said semiconductor package. A thin-film capacitor is provided wherein the thin-film capacitor has a first electrode and a second electrode separated by a dielectric. A temporary carrier layer is applied to the first electrode and the second electrode is patterned. A PWB core and a build-up material are provided, and the build-up material is placed between the PWB core and the patterned second electrode of said thin-film capacitor. The patterned electrode side of the thin-film capacitor is laminated to the PWB core by way of the build-up material, the temporary carrier layer is removed, and the first electrode is patterned.

Abstract: Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.

Abstract: Disclosed is a method of making a thin-film dielectric, comprising providing a base metal foil, forming a barium titanate-based dielectric precursor layer over a base metal foil, pre-annealing the dielectric precursor layer and base metal foil, rapidly heating the pre-annealed dielectric precursor layer from a temperature of less than 530° C. to an annealing temperature of more than 800° C. in less than 15 seconds; and annealing the dielectric to form a crystalline barium titanate-based dielectric on the base metal foil, wherein the crystalline barium titanate-based dielectric has grains with an average grain size that is greater or equal to 50 nanometers. Also disclosed is a method of making a capacitor comprised of the thin-film dielectric formed on a base metal foil according to the method described above with a second conductive layer formed over the dielectric.

Abstract: Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.

Abstract: Disclosed are methods of making a semiconductor package comprising at least one thin-film capacitor embedded into at least one build-up layer of said semiconductor package. A thin-film capacitor is provided wherein the thin-film capacitor has a first electrode and a second electrode separated by a dielectric. A temporary carrier layer is applied to the first electrode and the second electrode is patterned. A PWB core and a build-up material are provided, and the build-up material is placed between the PWB core and the patterned second electrode of said thin-film capacitor. The patterned electrode side of the thin-film capacitor is laminated to the PWB core by way of the build-up material, the temporary carrier layer is removed, and the first electrode is patterned.

Abstract: Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.

Abstract: This invention relates to a capacitive/resistive device, which may be embedded within a layer of a printed wiring board. Embedding the device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability. More specifically, the device, comprises a first metallic foil; a second metallic foil; a first electrode formed from the first metallic foil; a dielectric disposed over the first electrode; a resistor element formed on and adjacent to the dielectric; a conductive trace; and a second electrode formed from the second metallic foil and disposed over the dielectric and in electrical contact with the resistor element, wherein the dielectric is disposed between the first electrode and the second electrode and wherein said dielectric comprises an unfilled polymer of dielectric constant less than 4.0.

Abstract: The present invention relates to a power core comprising: at least one embedded surface mount technology (SMT) discrete chip capacitor layer comprising at least one embedded SMT discrete chip capacitor; and at least one planar capacitor laminate; wherein at least one planar capacitor laminate serves as a low inductance path to supply a charge to at least one embedded SMT discrete chip capacitor; and wherein said embedded SMT discrete chip capacitor is connected in parallel to said planar capacitor laminate.

Abstract: The present invention relates to a device comprising a power core wherein said power core comprises: at least one embedded singulated capacitor layer containing at least one embedded singulated capacitor; and at least one planar capacitor laminate; wherein said planar capacitor laminate serves as a low inductance path to supply a charge to said at least one embedded singulated capacitor; and wherein said at least one embedded singulated capacitor is connected in parallel to at least one of the said planar capacitor laminates; and wherein said power core is interconnected to at least one signal layer.

Abstract: A method of making capacitive/resistive devices provides both resistive and capacitive functions. The capacitive/resistive devices may be embedded within a layer of a printed wiring board. Embedding the capacitive/resistive devices conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability.

Abstract: This invention relates to a capacitive/resistive device, which may be embedded within a layer of a printed wiring board. Embedding the device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability. More specifically, the device, comprises a first metallic foil; a second metallic foil; a first electrode formed from the first metallic foil; a dielectric disposed over the first electrode; a resistor element formed on and adjacent to the dielectric; a conductive trace; and a second electrode formed from the second metallic foil and disposed over the dielectric and in electrical contact with the resistor element, wherein the dielectric is disposed between the first electrode and the second electrode and wherein said dielectric comprises an unfilled polymer of dielectric constant less than 4.0.

Abstract: A capacitive/resistive device provides both resistive and capacitive functions. The capacitive/resistive device may be embedded within a layer of a printed wiring board. Embedding the capacitive/resistive device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability.

Abstract: This invention relates to a capacitive/resistive device, which may be embedded within a layer of a printed wiring board. Embedding the device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability. More specifically, the device, comprises a first metallic foil; a second metallic foil; a first electrode formed from the first metallic foil; a dielectric disposed over the first electrode, a resistor element formed on and adjacent to the dielectric; a conductive trace; and a second electrode formed from the second metallic foil and disposed over the dielectric and in electrical contact with the resistor element, wherein the dielectric is disposed between the first electrode and the second electrode and wherein said dielectric comprises an unfilled polymer of dielectric constant less than 4.0. This invention also relates to a method of making the device.

Abstract: A capacitive/resistive device provides both resistive and capacitive functions. The capacitive/resistive device may be embedded within a layer of a printed wiring board. Embedding the capacitive/resistive device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability. Conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability.

Abstract: Disclosed is a method of forming individual thin-film capacitors for embedding inside printed wiring boards or organic semiconductor package substrates, which includes removal of selective portions of the capacitor by sandblasting or other means so that the ceramic dielectric does not come in contact with acid etching solutions.

Abstract: A capacitive/resistive device provides both resistive and capacitive functions. The capacitive/resistive device may be embedded within a layer of a printed wiring board. Embedding the capacitive/resistive device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability.