Abstract: Provided is a field-effect transistor (10) which comprises a metal or carbon source electrode (14) and a layer of a functional organic semiconductor (28). A column of an injection material (48) extends through the layer of the functional organic semiconductor (28), the column being in contact with both the source electrode (14) and the layer of the functional organic semiconductor (28). This column (48) facilitates the transfer charge carriers between the source electrode (14) and semiconductor layer (28). The injection material is preferably an organic compound such as 3-hexylthiophene, polyarylamine, poly(3,4-ethylenedioxythiophene)-polystyrenesulphonic acid or polyaniline.

Abstract: Provided is a method for forming a semiconductor element such as film. The method comprises the steps of: (i) depositing a suspension of particles of a first semiconductor and a solution of a second semiconductor or a precursor thereof on a surface of a substrate such that a mixture comprising the particles of the first semiconductor suspended in a liquid phase comprising the second semiconductor or precursor thereof results thereon; and (ii) solidifying the mixture to form the semiconductor element comprising particles of the first semiconductor in a matrix of the second semiconductor which electrically connects adjacent particles of the first semiconductor, the first and second semiconductors being of the same conductivity type and being formed from either the same or different materials. The method does not require any step of vacuum deposition or sintering. Also provided is a semiconductor element itself.

Abstract: Provided is a field-effect transistor (10) which comprises a metal or carbon source electrode (14) and a layer of a functional organic semiconductor (28). A column of an injection material (48) extends through the layer of the functional organic semiconductor (28), the column being in contact with both the source electrode (14) and the layer of the functional organic semiconductor (28). This column (48) facilitates the transfer charge carriers between the source electrode (14) and semiconductor layer (28). The injection material is preferably an organic compound such as 3-hexylthiophene, polyarylamine, poly(3,4-ethylenedioxythiophene)-polystyrenesulphonic acid or polyaniline.

Abstract: Provided is a method for forming a semiconductor element such as film. The method comprises the steps of: (i) depositing a suspension of particles of a first semiconductor and a solution of a second semiconductor or a precursor thereof on a surface of a substrate such that a mixture comprising the particles of the first semiconductor suspended in a liquid phase comprising the second semiconductor or precursor thereof results thereon; and (ii) solidifying the mixture to form the semiconductor element comprising particles of the first semiconductor in a matrix of the second semiconductor which electrically connects adjacent particles of the first semiconductor, the first and second semiconductors being of the same conductivity type and being formed from either the same or different materials. The method does not require any step of vacuum deposition or sintering. Also provided is a semiconductor element itself.

Abstract: Provided is a method forming a desired pattern of electronically functional material 3 on a substrate 1. The method comprises the steps of: creating a first layer of patterning material 2 on the substrate whilst leaving areas of the substrate exposed to define said desired pattern; printing a suspension comprising particles of the electronically functional material 3 in a liquid dispersant, to which the patterning material is impervious, on the patterning material and the exposed substrate; removing at least some of the liquid dispersant from the suspension to consolidate the particles; and applying a first solvent to said consolidated particles which is capable of solubilizing the patterning material 2 and to which the consolidated particles are pervious so that the patterning material is removed from the substrate 1 together with any overlying electronically functional material 3.