Abstract: Plasma-Activated liquids and methods of using the same are described. In one aspect, a method of manufacturing an integrated circuit includes activating a photolithography liquid with a plasma; and treating a device component with the activated photolithography liquid. In one example, the photolithography liquid is a photoresist. Activating the photoresist liquid may impart reactive species to the photoresist.

Abstract: Chronic sinusitis is treated by the application of cold plasma or plasma-activated species to the infected mucosal surfaces through use of an endoscope having a steerable end which may be projected into the sinus cavities through the nasal cavity. The cold plasma is generated at either the distal end of the endoscope with a power source by application of a power, or at the distal end by gas and electrical connections extending through the endoscope. The cold plasma or plasma-activated species act to destroy bacterial cells but not eukaryotic cells.

Abstract: Apparatuses and methods are provided for electrostatically inhibiting particle contamination of a surface of a process structure, such as a mask or reticle. The apparatuses include a plasma-generating system configured to establish a plasma shield over the surface of the process structure. The plasma shield includes a plasma region and a plasma sheath over the surface of the process structure, with the plasma sheath being disposed, at least partially, adjacent to the surface of the process structure, between the plasma region and the surface of the process structure. The plasma shield facilitates negatively charging particles within the plasma shield, and electrostatically inhibits negatively-charged particle contamination of the surface of the process structure to be protected.

Abstract: Chronic sinusitis is treated by the application of cold plasma or plasma-activated species to the infected mucosal surfaces through use of an endoscope having a steerable end which may be projected into the sinus cavities through the nasal cavity. The cold plasma is generated at either the distal end of the endoscope with a power source by application of a power, or at the distal end by gas and electrical connections extending through the endoscope. The cold plasma or plasma-activated species act to destroy bacterial cells but not eukaryotic cells.

Abstract: Chronic sinusitis is treated by the application of cold plasma or plasma-activated species to the infected mucosal surfaces through use of an endoscope having a steerable end which may be projected into the sinus cavities through the nasal cavity. The cold plasma is generated at either the distal end of the endoscope with a power source by application of a power, or at the distal end by gas and electrical connections extending through the endoscope. The cold plasma or plasma-activated species act to destroy bacterial cells but not eukaryotic cells.

Abstract: Reducing line edge roughness by particle beam exposure is generally described. In one example, a method includes forming one or more line structures on a surface of a semiconductor substrate, aligning the one or more line structures to a beam path of a particle beam such that particles of the particle beam travel within 45 degrees of parallel to a lengthwise direction of the one or more line structures, and exposing the one or more line structures to the particle beam to reduce line edge roughness of the one or more line structures wherein an incident angle of the particle beam to the surface of the semiconductor substrate is between about 45 degrees and about 90 degrees, where 0 degrees is normal to the surface of the semiconductor substrate.

Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: A system for non-contact cleaning of particulate contamination of surfaces includes one or more sources that create a charge imbalance between a surface and particles that contaminate the surface, and a power supply that creates a pulsed electrical bias on the surface. This imbalance produces an electrostatic force that propels the particles off the surface. The cleaning process can be associated, for example, with microelectronic lithography and manufacturing.

Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: A process merges chemical vapor deposition and physical vapor deposition technologies. It allows physical and chemical vapor deposition to occur in the same process chamber, contemporaneously. The “physical” component involves creation of ionized metal atoms. Ionization is typically accomplished via a plasma within the chamber. If the metal vapor is generated by sputtering, a separate plasma generation mechanism may be employed, which is different from the mechanism employed to generate a “source plasma” for generating sputtering species (e.g., argon ions). Alternatively, a single plasma source may be employed to generate the sputtering species and provide additional ionization of the metal vapor, as is the case with hollow cathode magnetron chambers. In some cases, the CVD precursor is introduced through a first line into the process chamber, while a sputtering gas is introduced via a second line.