Abstract: A conducted electrical weapon may deploy a first electrode. Deploying the first electrode may include deploying fewer electrodes than a minimum number required by the conducted electrical weapon to provide the stimulus signal at a remote location. The first electrode may be deployed in response to a first activation signal of a plurality of activation signals. The conducted electrical weapon may deploy a second electrode in response to a second activation signal of the plurality of activation signals. A signal generator of the conducted electrical weapon may provide a stimulus signal between the first electrode and the second electrode.

Abstract: The disclosure concerns methods of forming a semiconductor device with a repairable redistribution layer (RDL) design, comprising: preparing an original repairable RDL design; forming first conductive segments of the repairable RDL design; inspecting the first conductive segments of the repairable RDL design to detect manufacturing defects; detecting at least one defect in the first conductive segments; and forming second conductive segments of the repairable RDL design according to a new custom RDL design to mitigate the negative effects of the at least one defect among the first conductive segments. The disclosure also concerns semiconductor devices with a repairable RDL design.

Abstract: A method of forming a semiconductor device can comprise providing a first shift region in which to determine a first displacement. A second shift region may be provided in which to determine a second displacement. A unique electrically conductive structure may be formed comprising traces to account for the first displacement and the second displacement. The electrically conductive structure may comprise traces comprising a first portion within the first shift region and a second portion of traces in the second shift region laterally offset from the first portion of traces. A third portion of the traces may be provided in the routing area between the first shift region and the second shift region. A unique variable metal fill may be formed within the fill area. The variable metal fill may be electrically isolated from the unique electrically conductive structure.

Abstract: A method of forming a semiconductor device can comprise providing a first shift region in which to determine a first displacement. A second shift region may be provided in which to determine a second displacement. A unique electrically conductive structure may be formed comprising traces to account for the first displacement and the second displacement. The electrically conductive structure may comprise traces comprising a first portion within the first shift region and a second portion of traces in the second shift region laterally offset from the first portion of traces. A third portion of the traces may be provided in the routing area between the first shift region and the second shift region. A unique variable metal fill may be formed within the fill area. The variable metal fill may be electrically isolated from the unique electrically conductive structure.

Abstract: A conducted electrical weapon (“CEW”) launches electrodes to provide a stimulus signal through a target to impede locomotion of the target. The CEW may include a motion detector that detects movement of the CEW or the handle of the CEW. In response to the CEW detecting a predetermined movement in accordance with the movement detected by the motion detector, the CEW may perform one or more operations.

Abstract: A conducted electrical weapon may deploy a first electrode. Deploying the first electrode may include deploying fewer electrodes than a minimum number required by the conducted electrical weapon to provide the stimulus signal at a remote location. The first electrode may be deployed in response to a first activation signal of a plurality of activation signals. The conducted electrical weapon may deploy a second electrode in response to a second activation signal of the plurality of activation signals. A signal generator of the conducted electrical weapon may provide a stimulus signal between the first electrode and the second electrode.

Abstract: A method of forming a semiconductor device can comprise providing a first shift region in which to determine a first displacement. A second shift region may be provided in which to determine a second displacement. A unique electrically conductive structure may be formed comprising traces to account for the first displacement and the second displacement. The electrically conductive structure may comprise traces comprising a first portion within the first shift region and a second portion of traces in the second shift region laterally offset from the first portion of traces. A third portion of the traces may be provided in the routing area between the first shift region and the second shift region. A unique variable metal fill may be formed within the fill area. The variable metal fill may be electrically isolated from the unique electrically conductive structure.

Abstract: The disclosure concerns methods of forming a semiconductor device with a repairable redistribution layer (RDL) design, comprising: preparing an original repairable RDL design; forming first conductive segments of the repairable RDL design; inspecting the first conductive segments of the repairable RDL design to detect manufacturing defects; detecting at least one defect in the first conductive segments; and forming second conductive segments of the repairable RDL design according to a new custom RDL design to mitigate the negative effects of the at least one defect among the first conductive segments. The disclosure also concerns semiconductor devices with a repairable RDL design.

Abstract: The disclosure concerns methods of forming a semiconductor device with a repairable redistribution layer (RDL) design, comprising: preparing an original repairable RDL design; forming first conductive segments of the repairable RDL design; inspecting the first conductive segments of the repairable RDL design to detect manufacturing defects; detecting at least one defect in the first conductive segments; and forming second conductive segments of the repairable RDL design according to a new custom RDL design to mitigate the negative effects of the at least one defect among the first conductive segments. The disclosure also concerns semiconductor devices with a repairable RDL design.

Abstract: A method of forming a semiconductor device can comprise providing a first shift region in which to determine a first displacement. A second shift region may be provided in which to determine a second displacement. A unique electrically conductive structure may be formed comprising traces to account for the first displacement and the second displacement. The electrically conductive structure may comprise traces comprising a first portion within the first shift region and a second portion of traces in the second shift region laterally offset from the first portion of traces. A third portion of the traces may be provided in the routing area between the first shift region and the second shift region. A unique variable metal fill may be formed within the fill area. The variable metal fill may be electrically isolated from the unique electrically conductive structure.

Abstract: A conducted electrical weapon may deploy a first electrode. Deploying the first electrode may include deploying fewer electrodes than a minimum number required by the conducted electrical weapon to provide the stimulus signal at a remote location. The first electrode may be deployed in response to a first activation signal of a plurality of activation signals. The conducted electrical weapon may deploy a second electrode in response to a second activation signal of the plurality of activation signals. A signal generator of the conducted electrical weapon may provide a stimulus signal between the first electrode and the second electrode.

Abstract: A conducted electrical weapon may deploy a single electrode. The single electrode may be deployed in response to a first activation signal of a sequence of activation signals. The conducted electrical weapon may deploy a second electrode in response to a second activation signal of the sequence of activation signals. A signal generator of the conducted electrical weapon may provide a stimulus signal between the single electrode and the second electrode. Deploying the single electrode may include deploying fewer electrodes than a minimum number required by the conducted electrical weapon to provide the stimulus signal at a remote location.

Abstract: The disclosure concerns methods of forming a semiconductor device with a repairable redistribution layer (RDL) design, comprising: preparing an original repairable RDL design; forming first conductive segments of the repairable RDL design; inspecting the first conductive segments of the repairable RDL design to detect manufacturing defects; detecting at least one defect in the first conductive segments; and forming second conductive segments of the repairable RDL design according to a new custom RDL design to mitigate the negative effects of the at least one defect among the first conductive segments. The disclosure also concerns semiconductor devices with a repairable RDL design.

Abstract: A method of forming a semiconductor device can comprise providing a first shift region in which to determine a first displacement. A second shift region may be provided in which to determine a second displacement. A unique electrically conductive structure may be formed comprising traces to account for the first displacement and the second displacement. The electrically conductive structure may comprise traces comprising a first portion within the first shift region and a second portion of traces in the second shift region laterally offset from the first portion of traces. A third portion of the traces may be provided in the routing area between the first shift region and the second shift region. A unique variable metal fill may be formed within the fill area. The variable metal fill may be electrically isolated from the unique electrically conductive structure.

Abstract: A conducted electrical weapon may deploy a single electrode. The single electrode may be deployed in response to a first activation signal of a sequence of activation signals. The conducted electrical weapon may deploy a second electrode in response to a second activation signal of the sequence of activation signals. A signal generator of the conducted electrical weapon may provide a stimulus signal between the single electrode and the second electrode. Deploying the single electrode may include deploying fewer electrodes than a minimum number required by the conducted electrical weapon to provide the stimulus signal at a remote location.

Abstract: A conducted electrical weapon (“CEW”) launches electrodes to provide a stimulus signal through a target to impede locomotion of the target. The CEW may include a motion detector that detects movement of the CEW or the handle of the CEW. In response to the CEW detecting a predetermined movement in accordance with the movement detected by the motion detector, the CEW may perform one or more operations.