Abstract: A method for characterizing a microfabrication process and the product thereof is described. A substrate having TSV's formed therein is assessed by determining the geometries and positions of the top and bottom ends of a TSV. Individual TSV's as well as the entire pattern of TSV's formed in a substrate may be assessed.

Abstract: A device (10) and methods for simultaneously measuring the thickness of individual wafer layers, the depth of etched features on a wafer, and the three-dimensional profile of a wafer. The structure of the device (10) is comprised of a source/receiver section (12) having a broadband source (14), a receiver (16) and a signal processing section (20). An interferometer (28) separates or combines measurement and reference light and has a measurement leg (30) and a reference leg (34), and a reference mirror (36). The device (10) analyzes a received spectrum which is comprised of a measurement of intensity versus wavelength. There are two measurement methods disclosed: the first method is utilized for taking a single measurement and the second method is utilized for multiple measurements.

Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Abstract: A method for characterizing a microfabrication process and the product thereof is described. A substrate having TSV's formed therein is assessed by determining the geometries and positions of the top and bottom ends of a TSV. Individual TSV's as well as the entire pattern of TSV's formed in a substrate may be assessed.

Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Abstract: A device (10) and methods for simultaneously measuring the thickness of individual wafer layers, the depth of etched features on a wafer, and the three-dimensional profile of a wafer. The structure of the device (10) is comprised of a source/receiver section (12) having a broadband source (14), a receiver (16) and a signal processing section (20). An interferometer (28) separates or combines measurement and reference light and has a measurement leg (30) and a reference leg (34), and a reference mirror (36). The device (10) analyzes a received spectrum which is comprised of a measurement of intensity versus wavelength. There are two measurement methods disclosed: the first method is utilized for taking a single measurement and the second method is utilized for multiple measurements.

Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Abstract: A method and apparatus for the measurement of wafer thickness, flatness and the trench depth of any trenches etched thereon using the back surface of the wafer to accurately measure the back side of a trench, rendering the trench an effective bump, capable of being measured on the top surface and the bottom surface through a non-contact optical instrument that simultaneously measures the wavelength of the top surface and bottom surface of the wafer, converting the distance between wavelengths to a thickness measurement, using a light source that renders the material of which the wafer is composed transparent in that wavelength range, i.e., using the near infrared region for measuring the thickness and trench depth measurement of wafers made of silicon, which is opaque in the visible region and transparent in the near infrared region. Thickness and flatness, as well as localized shape, can also be measured using a calibration method that utilizes a pair of optical styli.

Abstract: A system for the measurement of high aspect ratio trenches. The preferred embodiment consists of three elements: a) an integrated microscope and optical height sensor, b) an axially dispersive, afocal lens system, which is included in the optical height sensor, and c) an algorithm for processing the optical height sensor data to produce the depth of the high aspect ratio trench. The present invention combines a traditional imaging microscope with a chromatic confocal, single point, height sensor. This combination instantaneously provides an image of the object and the height value at one point in the image. No mechanical movement is necessary anywhere in the system to achieve that result. The chromatic confocal height sensor is integrated with a traditional microscope through the use of separate wavelength bands such as a wavelength band in the visible part of the spectrum, and a wavelength band in the infrared or ultraviolet part of the spectrum.

Abstract: A method and apparatus for the measurement of wafer thickness, flatness and the trench depth of any trenches etched thereon using the back surface of the wafer to accurately measure the back side of a trench, rendering the trench an effective bump, capable of being measured on the top surface and the bottom surface through a non-contact optical instrument that simultaneously measures the wavelength of the top surface and bottom surface of the wafer, converting the distance between wavelengths to a thickness measurement, using a light source that renders the material of which the wafer is composed transparent in that wavelength range, i.e., using the near infrared region for measuring the thickness and trench depth measurement of wafers made of silicon, which is opaque in the visible region and transparent in the near infrared region. Thickness and flatness, as well as localized shape, can also be measured using a calibration method that utilizes a pair of optical styli.

Abstract: A multiple-port optical device combines two polarization combiner-splitters into one package. Two single mode optical fibers are enclosed in a first ferrule of the package and are optically coupled to four polarization maintaining fibers enclosed in a second ferrule of the package. The optical fibers are precisely positioned using improved fiber ferrules comprising various capillary designs. A prism is mounted between the single mode fibers and the polarization maintaining fibers. The fibers are screened for geometric characteristics which aide in precisely positioning the fiber cores. The ferrules, capillaries, fibers, and adhesives are combined to reduce adverse thermal effects over a broad range of environmental conditions. The precise positioning and geometry of the optical fibers aids in optically aligning the elements of both polarization combiner-splitters in the one package. The invention is applicable to related devices such as multiple isolators, combiner-isolators, splitter-isolators, and the like.

Abstract: An apparatus and method of ascertaining the position of a core within a fiberoptic cable and calculating the position of the core relative to the cladding and jacket of the fiberoptic cable. The apparatus provides for observing of the end of the fiberoptic cable by using grazing incident illumination which causes the diameter of the core, the diameter of the cladding and the diameter of the jacket of the fiberoptic cable to be readily observed and then utilizing of a microscope and associated software to read the average diameter of the core and its position relative to the average diameter of the cladding and the average diameter of the jacket which will then make a determination as to how far off center the core is relative to the cladding and the jacket.

Abstract: A multiple-port optical device combines two polarization combiner-splitters into one package. Two single mode optical fibers are enclosed in a first ferrule of the package and are optically coupled to four polarization maintaining fibers enclosed in a second ferrule of the package. The optical fibers are precisely positioned using improved fiber ferrules comprising various capillary designs. A prism is mounted between the single mode fibers and the polarization maintaining fibers. The fibers are screened for geometric characteristics which aide in precisely positioning the fiber cores. The ferrules, capillaries, fibers, and adhesives are combined to reduce adverse thermal effects over a broad range of environmental conditions. The precise positioning and geometry of the optical fibers aids in optically aligning the elements of both polarization combiner-splitters in the one package. The invention is applicable to related devices such as multiple isolators, combiner-isolators, splitter-isolators, and the like.