Patents by Inventor David S. Meyaard
David S. Meyaard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230232633Abstract: Vertical wordline driver structures and methods. The vertical wordline driver comprises a transistor that is used to drive a wordline in a three-dimensional 3D memory structure. A vertical transistor structure is formed in a semiconductor substrate comprising a gate all around (GAA) structure or a double-gate structure including a gate oxide, an amorphous IGZO (Indium Gallium Zinc Oxide) channel, adjacent to the gate oxide, and a liner adjacent to the amorphous IGZO channel. The GAA structure may comprise a conical frustrum shape or a cylindrical shape with straight walls. The double-gate structure may have straight or angled walls. An outer wall of the gate oxide is in contact with a polysilicon gate layer. An upper and lower contact is electrically coupled to the amorphous IGZO channel.Type: ApplicationFiled: March 22, 2023Publication date: July 20, 2023Inventors: David S. MEYAARD, Nadia M. RAHHAL-ORABI, Randy J. KOVAL
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Patent number: 11088017Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: GrantFiled: March 2, 2020Date of Patent: August 10, 2021Assignee: Micron Technology, Inc.Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King
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Publication number: 20200203220Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: ApplicationFiled: March 2, 2020Publication date: June 25, 2020Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King
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Patent number: 10600682Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: GrantFiled: October 26, 2018Date of Patent: March 24, 2020Assignee: Micron Technology, Inc.Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King
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Patent number: 10515973Abstract: The present disclosure relates to providing a wordline bridge between wordlines of adjacent tiles of memory cells to reduce the number wordline staircases in 3D memory arrays. An apparatus may include a memory array having memory cells. The memory array includes a first block of pages of the memory cells in a first tile and a second block of pages of the memory cells in a second tile. The apparatus may also include a polysilicon wordline bridge that couples first wordlines of the first block to second wordlines of the second block to couple the first tile to the second tile. The wordline bridge may be formed by applying a hard mask over the first tile, the second tile, and over a portion of polysilicon that connects the first tile to the second tile.Type: GrantFiled: November 30, 2017Date of Patent: December 24, 2019Assignee: Intel CorporationInventors: Deepak Thimmegowda, Owen W. Jungroth, David S. Meyaard, Khaled Hasnat
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Publication number: 20190206727Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: ApplicationFiled: October 26, 2018Publication date: July 4, 2019Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King
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Patent number: 10269625Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material.Type: GrantFiled: December 28, 2017Date of Patent: April 23, 2019Assignee: Micron Technology, Inc.Inventors: John B. Matovu, David S. Meyaard, Gowrisankar Damarla, Sri Sai Sivakumar Vegunta, Kunal Shrotri, Shashank Saraf, Kevin R. Gast, Jivaan Kishore Jhothiraman, Suresh Ramarajan, Lifang Xu, Rithu K. Bhonsle, Rutuparna Narulkar, Matthew J. King
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Publication number: 20190043874Abstract: The present disclosure relates to providing a wordline bridge between wordlines of adjacent tiles of memory cells to reduce the number wordline staircases in 3D memory arrays. An apparatus may include a memory array having memory cells. The memory array includes a first block of pages of the memory cells in a first tile and a second block of pages of the memory cells in a second tile. The apparatus may also include a polysilicon wordline bridge that couples first wordlines of the first block to second wordlines of the second block to couple the first tile to the second tile. The wordline bridge may be formed by applying a hard mask over the first tile, the second tile, and over a portion of polysilicon that connects the first tile to the second tile.Type: ApplicationFiled: November 30, 2017Publication date: February 7, 2019Applicant: Intel CorporationInventors: Deepak Thimmegowda, Owen W. Jungroth, David S. Meyaard, Khaled Hasnat