Abstract: Peroxide treatment compositions for use in laundry capable of providing sanitization through the wash e.g., for use with a detergent, where a peroxide activator is stabilized without the presence of phosphorus-containing compounds (e.g., phosphorus-containing stabilizers), through use of a nonionic surfactant (e.g., alkoxylated alcohol) with a cloud point above 45° C. Use of a single nonionic surfactant, or a surfactant package that may include a small fraction (e.g., less than 0.5%) of sodium lauryl sulfate or another anionic surfactant has been found to be surprisingly effective at stabilizing the peroxide/activator combination, even where water content may be 85% or greater. The composition can have a pH of 5 or less (e.g., 3 to 4). The composition may be free of other anionic surfactants, cationic surfactants, zwitterionic surfactants, amphoteric surfactants, magnesium salts, borates and boric acid, hydroxides, chelating agents, various amine oxides, ethoxylated amines, and the like.

Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.

Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.