Patents by Inventor David S. Wisbey

David S. Wisbey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low-loss superconducting devices
    Patent number: 8954125
    Abstract: Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes forming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: February 10, 2015
    Assignees: International Business Machines Corporation, The United States of America, as represented by the Secretary of Commerce, The National Institute of Standards
    Inventors: Antonio D. Corcoles Gonzalez, Jiansong Gao, Dustin A. Hite, George A. Keefe, David P. Pappas, Mary E. Rothwell, Matthias Steffen, Chang C. Tsuei, Michael R. Vissers, David S. Wisbey
  • LOW-LOSS SUPERCONDUCTING DEVICES
    Publication number: 20130029848
    Abstract: Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes foaming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.
    Type: Application
    Filed: July 28, 2011
    Publication date: January 31, 2013
    Applicant: International Business Machines Corporation
    Inventors: Antonio D. Corcoles Gonzalez, Jiansong Gao, Dustin A. Hite, George A. Keefe, David P. Pappas, Mary E. Rothwell, Matthias Steffen, Chang C. Tsuei, Michael R. Vissers, David S. Wisbey