Abstract: A ride vehicle system includes a ride track and a ride vehicle. The ride track includes a vehicle rail and an accessory rail. The ride vehicle includes a ride vehicle base, a show element coupled to the ride vehicle base, and a mechanical linkage. The ride vehicle base is configured to interface with the vehicle rail of the ride track and to move along the vehicle rail of the ride track. The show element coupled to the ride vehicle base is configured to actuate with respect to the ride vehicle base. The mechanical linkage includes a first end coupled to the show element and a second end coupled to the accessory rail of the ride track. The mechanical linkage is configured to move along the accessory rail and to actuate the show element based at least in part on a position of the accessory rail with respect to the vehicle rail.

Abstract: A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.

Abstract: In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction?70% of the total number of diamond crystallites forming the polycrystalline diamond film.

Abstract: A ride vehicle system includes a ride track and a ride vehicle. The ride track includes a vehicle rail and an accessory rail. The ride vehicle includes a ride vehicle base, a show element coupled to the ride vehicle base, and a mechanical linkage. The ride vehicle base is configured to interface with the vehicle rail of the ride track and to move along the vehicle rail of the ride track. The show element coupled to the ride vehicle base is configured to actuate with respect to the ride vehicle base. The mechanical linkage includes a first end coupled to the show element and a second end coupled to the accessory rail of the ride track. The mechanical linkage is configured to move along the accessory rail and to actuate the show element based at least in part on a position of the accessory rail with respect to the vehicle rail.

Abstract: In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction?70% of the total number of diamond crystallites forming the polycrystalline diamond film.

Abstract: A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.

Abstract: In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction?70% of the total number of diamond crystallites forming the polycrystalline diamond film.

Abstract: A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. A method of microwave plasma CVD growth of a diamond film on the substrate is also disclosed.

Abstract: A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. A method of microwave plasma CVD growth of a diamond film on the substrate is also disclosed.

Abstract: Disclosed is a chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window is disposed in the resonating cavity, intermediate a top and bottom of the resonating cavity, separating the resonating cavity into an upper zone and a plasma zone. The resonating cavity is configured to propagate microwaves from the upper zone through the microwave transparent window into the plasma zone. A noise cancelling antenna is disposed in a non-weight bearing manner through an opening in the microwave transparent window. Also disclosed is a method that includes (a) providing the above-described CVD reactor; (b) feeding a carbon bearing reactive gas into the plasma zone; and (c) concurrent with step (b), feeding microwaves into the resonant cavity thereby forming in the plasma zone a plasma that causes a diamond film to form in the plasma zone.

Abstract: In a system and method of growing a diamond film, a cooling gas flows between a substrate and a substrate holder of a plasma chamber and a process gas flows into the plasma chamber. In the presence of an plasma in the plasma chamber, a temperature distribution across the top surface of the substrate and/or across a growth surface of the growing diamond film is controlled whereupon, during diamond film growth, the temperature distribution is controlled to have a predetermined temperature difference between a highest temperature and a lowest temperature of the temperature distribution. The as-grown diamond film has a total thickness variation (TTV)<10%, <5%, or <1%; and/or a birefringence between 0 and 100 nm/cm, 0 and 80 nm/cm, 0 and 60 nm/cm, 0 and 40 nm/cm, 0 and 20 nm/cm, 0 and 10 nm/cm, or 0 and 5 nm/cm.

Abstract: In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction ?70% of the total number of diamond crystallites forming the polycrystalline diamond film.