Abstract: A photonic platform includes a substrate, a buried oxide layer on the substrate, a first optical layer on the buried oxide layer, the first optical layer including one or more waveguides shaped as rib waveguides protruding upwardly from a common underlying slab and a second optical layer spaced above the first optical layer, the second optical layer defining an upper waveguide that crosses over the one or more partially etched waveguides. A low-loss photonic switch may be made using a silicon photonic platform implementing this waveguide crossing.

Abstract: A method of fabricating a P-N junction in a semiconductor structure, e.g. silicon (Si) structure, is presented. The method may include several implantation steps performed at a single implantation angle with respect to the Si structure. In a first implantation step, a first dopant species is implanted over a first portion of the Si structure including a first edge of the Si structure. In a second implantation step, a second dopant species is implanted over a second portion of the Si structure including a second edge of the Si structure opposed to the first edge but excluding the first edge. The first portion and the second portion may overlap in a central portion of the Si structure between the first edge and the second edge, such that the second dopant species may be implanted below the first dopant species.

Abstract: A silicon photonic platform includes a substrate supporting a buried oxide layer, an active silicon layer deposited on the buried oxide layer, a first silicon nitride layer separated from the active silicon layer by a first spacer, the first silicon nitride layer and the active silicon layer constituting a first light-transferring interlayer transition and a second silicon nitride layer covered by a cladding and separated from the first silicon layer by a second spacer, the second silicon nitride layer and the first silicon nitride layer constituting a second light-transferring interlayer transition. The second silicon nitride layer passes over one or more waveguides in the active silicon layer to thereby define a waveguide crossing. The silicon nitride layers may be substituted with an equivalent dielectric with a similar refractive index and high optical transparency in the desired operating wavelength range.

Abstract: A method of fabricating a P-N junction in a semiconductor structure, e.g. silicon (Si) structure, is presented. The method may include several implantation steps performed at a single implantation angle with respect to the Si structure. In a first implantation step, a first dopant species is implanted over a first portion of the Si structure including a first edge of the Si structure. In a second implantation step, a second dopant species is implanted over a second portion of the Si structure including a second edge of the Si structure opposed to the first edge but excluding the first edge. The first portion and the second portion may overlap in a central portion of the Si structure between the first edge and the second edge, such that the second dopant species may be implanted below the first dopant species.

Abstract: A photonic platform includes a substrate, a buried oxide layer on the substrate, a first optical layer on the buried oxide layer, the first optical layer including one or more waveguides shaped as rib waveguides protruding upwardly from a common underlying slab and a second optical layer spaced above the first optical layer, the second optical layer defining an upper waveguide that crosses over the one or more partially etched waveguides. A low-loss photonic switch may be made using a silicon photonic platform implementing this waveguide crossing.

Abstract: A silicon photonic platform includes a substrate supporting a buried oxide layer, an active silicon layer deposited on the buried oxide layer, a first silicon nitride layer separated from the active silicon layer by a first spacer, the first silicon nitride layer and the active silicon layer constituting a first light-transferring interlayer transition and a second silicon nitride layer covered by a cladding and separated from the first silicon layer by a second spacer, the second silicon nitride layer and the first silicon nitride layer constituting a second light-transferring interlayer transition. The second silicon nitride layer passes over one or more waveguides in the active silicon layer to thereby define a waveguide crossing. The silicon nitride layers may be substituted with an equivalent dielectric with a similar refractive index and high optical transparency in the desired operating wavelength range.

Abstract: There is provided an output coupler modulated laser. The laser includes an optical resonator for light to circulate within, a gain medium housed within the optical resonator and a pump. An output coupler included in the optical resonator is responsive to a control signal to generate a modulated optical signal at a laser output port, and a complementary signal at a through port to retain circulating light within the optical resonator. The output coupler and the pump are jointly controllable to maintain the power level of the circulating light substantially at a selected, steady state level, and to decouple the modulation response of the laser from the intrinsic response of the circulating light due to interaction with the gain medium. The output coupler is configurable for simple amplitude modulation, Phase-Shift Keying (PSK), Quadrature Amplitude Modulation (QAM), and is suitable for use with high-finesse, micron or millimeter scale resonators.

Abstract: There is provided an output coupler modulated laser. The laser includes an optical resonator for light to circulate within, a gain medium housed within the optical resonator and a pump. An output coupler included in the optical resonator is responsive to a control signal to generate a modulated optical signal at a laser output port, and a complementary signal at a through port to retain circulating light within the optical resonator. The output coupler and the pump are jointly controllable to maintain the power level of the circulating light substantially at a selected, steady state level, and to decouple the modulation response of the laser from the intrinsic response of the circulating light due to interaction with the gain medium. The output coupler is configurable for simple amplitude modulation, Phase-Shift Keying (PSK), Quadrature Amplitude Modulation (QAM), and is suitable for use with high-finesse, micron or millimeter scale resonators.

Abstract: A follow-through measuring device for measuring and displaying the time duration of impact comprises a piezoelectric sensor for sensing the presence of force while the athletic implement is in contact with a ball. The sensor provides a signals with a time duration equal to the time of contact of the ball with the striking implement. The follow-through measuring device further comprises a display unit which houses a receiver, a timer circuit, and a clock display. The signal provided by the sensor is transmitted to the receiver in the display unit, via an rf signal. The timer circuit measures the duration of time which the signal exceed a predetermined trigger level. The display unit then displays the measured time on the clock display.