Abstract: A voltage controlled aircraft electric propulsion system includes an electric propulsion system. The voltage controlled aircraft electric propulsion system may include electric propulsors providing thrust for the aircraft. In hybrid systems, a gas turbine engine may also be included. The electric propulsion system may include at least one electric generator power source, at least one propulsor motor load, and at least one stored energy power source, such as a battery. The propulsor motor load may be supplied power from a power supply bus. The voltage of the power supply bus may be adjusted according to an altitude of the aircraft while maintaining a substantially constant current flow to the propulsor motor load. Due to the adjustment to lower voltages at increased altitude, insulations levels may be lower.

Abstract: A semiconductor structure comprising III-N materials, includes: a support substrate; a main layer of III-N material, the main layer comprising a first section disposed on the support substrate and a second section disposed on the first section; an inter-layer of III-N material, disposed between the first section and the second section in order to compress the second section of the main layer, wherein the structure's inter-layer consists of a lower layer disposed on the first section and an upper layer disposed on the lower layer and formed by a superlattice.

Abstract: A semiconductor structure comprising III-N materials, includes: a support substrate; a main layer of III-N material, the main layer comprising a first section disposed on the support substrate and a second section disposed on the first section; an inter-layer of III-N material, disposed between the first section and the second section in order to compress the second section of the main layer, wherein the structure's inter-layer consists of a lower layer disposed on the first section and an upper layer disposed on the lower layer and formed by a superlattice.

Abstract: The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer of GaN on a substrate, wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer of BwAlxGayInzN, (c2) growth of a layer of BwAlxGayInzN, (c3) growth of an intermediate layer of BwAlxGayInzN, at least one of the layers formed in steps (c1) to (c3) being an at least ternary III-N alloy comprising aluminium and gallium, (d) growth of said layer of GaN.

Abstract: The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer of GaN on a substrate, wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer of BwAlxGayInzN, growth of a layer of BwAlxGayInzN, (c3) growth of an intermediate layer of BwAlxGayInzN, at least one of the layers formed in steps (c1) to (c3) being an at least ternary III-N alloy comprising aluminium and gallium, (d) growth of said layer of GaN.