Patents by Inventor David Sheridan
David Sheridan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250161766Abstract: A method for enhancing the accuracy of aiming while putting a golf ball with a putter is provided. A head of the putter includes a body having top and bottom surfaces separated by a distance, an interior opening extending part of the distance from the top surface to the bottom surface, a first end and a second end. The second end includes a target and the first end includes an aiming member extending into the opening and towards a center of the target. The method includes the steps of focusing on a pointed end of the aiming member and aligning the pointed end with a hole in the ground, executing a backswing while concentrating on moving the pointed end of the aiming member towards the center of the target, executing a forward swing towards the golf ball, and striking the golf ball to translate the golf ball along the alinement towards the hole.Type: ApplicationFiled: January 20, 2024Publication date: May 22, 2025Inventor: David Sheridan ENGLEFIELD
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Patent number: 11980794Abstract: A method for enhancing the accuracy of aiming while putting a golf ball with a putter is provided. A head of the putter includes a body having a first end and a second end, the second end includes a target and the first end includes an aiming member extending towards a center of the target. The method includes the steps of focusing on a pointed end of the aiming member and aligning the pointed end with a hole in the ground, executing a backswing while concentrating on moving the pointed end of the aiming member towards the center of the target, executing a forward swing towards the golf ball, and striking the golf ball to translate the golf ball along the alinement towards the hole.Type: GrantFiled: November 21, 2023Date of Patent: May 14, 2024Inventor: David Sheridan Englefield
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Patent number: 11806114Abstract: A system for measuring capillary refill time includes a wearable device and a control unit. The wearable device includes a force sensor to obtain a force signal and an optical sensor to obtain an optical signal. The system ensures that an applied force is acceptable in both magnitude and duration, and that a duration over which the applied force is released or removed is acceptable. These factors can establish that a capillary refill time determined or calculated therein is accurate. The system can also determine the capillary refill time based on the force and optical signals obtained by the force and optical sensors, respectively.Type: GrantFiled: May 29, 2020Date of Patent: November 7, 2023Assignees: ProMedix, Inc., Welch Allyn, Inc., Oregon Health & Science UniversityInventors: David Sheridan, Matthew Lee Hansen, Andrew Kibler, Steven D. Baker, Richard Allen Sunderland, Richard H. Weitzel
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Publication number: 20230346234Abstract: Disclosed are clinical decompensation monitoring platforms and methods. An example platform includes a wearable device to acquire photoplethysmography (PPG) waveform data representing a person's heart rate variability (HRV). Also disclosed are methods for collecting and verifying the HRV data, scoring and selecting optimal segments of HRV data for further processing that entails detecting clinically significant changes in a high frequency (HF) component, and passively monitoring clinical decompensation for providing patient feedback with individualized coping mechanisms.Type: ApplicationFiled: September 16, 2021Publication date: November 2, 2023Inventors: David Sheridan, Steven D. Baker, Ryan Dehart
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Patent number: 11776994Abstract: A silicon carbide MOSFET device and method for making thereof are disclosed. The silicon carbide MOSFET device comprises a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type. A body region of a second conductivity type opposite the first is formed in epitaxial layer and an accumulation mode region of the first conductivity type is formed in the body region and an inversion mode region of the second conductivity type formed in the body region. The accumulation mode region is located between the inversion mode region and a junction field effect transistor (JFET) region of the epitaxial layer.Type: GrantFiled: February 16, 2021Date of Patent: October 3, 2023Assignee: Alpha and Omega Semiconductor International LPInventors: David Sheridan, Arash Salemi, Madhur Bobde
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Patent number: 11616123Abstract: A semiconductor device and a method of making thereof are disclosed. The device includes a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type formed on the substrate. A buffer layer between the substrate and the epitaxial layer is doped with the first conductivity type at a doping level between that of the substrate and that of the epitaxial layer. A cell includes a body region doped with the second conductivity formed in the epitaxial layer. The second conductivity type is opposite the first conductivity type. The cell includes a source region doped with the first conductivity type and formed in at least the body region. The device further includes a short region doped with the second conductivity type formed in the epitaxial layer separated from source region of the cell by the body region of the cell wherein the short region is conductively coupled with the source region.Type: GrantFiled: February 12, 2021Date of Patent: March 28, 2023Assignee: ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LPInventors: Arash Salemi, David Sheridan
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Patent number: 11591968Abstract: A method for shimming a thrust bearing for an accessory power take off shaft to obtain optimal meshing of bevel gears within the internal gearbox (IGB) without disassembly of the IGB is enabled by relocating the thrust bearing from the engine sump. The accessory gearbox (AGB) is driven from a power off-take from the turbine spool via the IGB. The radial position of the power take-off bevel gear is established by a radial position of the thrust bearing attached to the exterior of the casing via a housing. Candidate shims are selected from a set each having different thicknesses, the shims are formed of two halves and placed between the housing and the engine casing to adjust the radial position of the thrust bearing and consequently the power take-off bevel gear, without requiring the disassembly of the IGB.Type: GrantFiled: February 2, 2022Date of Patent: February 28, 2023Assignee: ROLLS-ROYCE CORPORATIONInventors: Timothy David Sheridan, Joseph Swift, Daniel Feinstein, Caleb Camara
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Publication number: 20220370252Abstract: A narrow-orifice foreign body extraction device configured as a unitary article comprises a volumetric enclosure bounded by a frustoconical cone, which has inner and outer surfaces and an intermediate section positioned between an apertured cap section and an apertured base section. The inner surface defines a boundary of an interior chamber of the volumetric enclosure, and the inner and outer surfaces define between them a cone wall. An adhesive material is secured to at least part of the inner or outer surfaces at the cap section and comprises an apertured portion and a tail portion. The apertured portion has one or more adhesive apertures and adhesive-covered opposing inner and outer side surfaces, and the tail portion has an adhesive-covered inner tail surface extending along and bonding to at least part of the outer surface at the cap section to secure the adhesive material to the cap section.Type: ApplicationFiled: May 20, 2022Publication date: November 24, 2022Inventors: David Sheridan, Richard Weitzel
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Publication number: 20220279939Abstract: An infant feeding positioning cushion is designed to provide support to an infant during feeding. The infant feeding positioning cushion allows an infant to be placed on an infant feeding surface at a semi-upright angle in a prone position with the infant's head disposed to the side or in a side laying position. The infant feeding positioning cushion includes an upper surface, a lower section, and an inclinometer to determine if the infant feeding positioning cushion is disposed at a predetermined angle. The upper surface may include an inclined section that includes a recessed portion that is disposed beneath a plane of the upper surface and a raised portion that is disposed above the plane of the upper surface. The raised portion is configured to support the infant's head and the recessed portion is configured to support the infant's lower body.Type: ApplicationFiled: March 4, 2022Publication date: September 8, 2022Inventors: Jessica L. Grant, David Sheridan, Samantha Swartz, Gregory S. Hinzmann
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Publication number: 20220262896Abstract: A silicon carbide MOSFET device and method for making thereof are disclosed. The silicon carbide MOSFET device comprises a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type. A body region of a second conductivity type opposite the first is formed in epitaxial layer and an accumulation mode region of the first conductivity type is formed in the body region and an inversion mode region of the second conductivity type formed in the body region. The accumulation mode region is located between the inversion mode region and a junction field effect transistor (JFET) region of the epitaxial layer.Type: ApplicationFiled: February 16, 2021Publication date: August 18, 2022Inventors: David Sheridan, Arash Salemi, Madhur Bobde
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Publication number: 20220262902Abstract: A semiconductor device and a method of making thereof are disclosed. The device includes a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type formed on the substrate. A buffer layer between the substrate and the epitaxial layer is doped with the first conductivity type at a doping level between that of the substrate and that of the epitaxial layer. A cell includes a body region doped with the second conductivity formed in the epitaxial layer. The second conductivity type is opposite the first conductivity type. The cell includes a source region doped with the first conductivity type and formed in at least the body region. The device further includes a short region doped with the second conductivity type formed in the epitaxial layer separated from source region of the cell by the body region of the cell wherein the short region is conductively coupled with the source region.Type: ApplicationFiled: February 12, 2021Publication date: August 18, 2022Inventors: Arash Salemi, David Sheridan
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Patent number: 11407695Abstract: In an aspect, the present disclosure provides a method for the oxidative coupling of methane to generate hydrocarbon compounds containing at least two carbon atoms (C2+ compounds). The method can include mixing a first gas stream comprising methane with a second gas stream comprising oxygen to form a third gas stream comprising methane and oxygen and performing an oxidative coupling of methane (OCM) reaction using the third gas stream to produce a product stream comprising one or more C2+ compounds.Type: GrantFiled: February 17, 2021Date of Patent: August 9, 2022Assignee: Lummus Technology LLCInventors: Joel Cizeron, Guido Radaelli, Satish Lakhapatri, Erik Freer, Jin Ki Hong, Jarod McCormick, David Sheridan, Charles Reid, Roberto Pellizzari, Samuel Weinberger, Justin Dwight Edwards
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Publication number: 20220154650Abstract: A method for shimming a thrust bearing for an accessory power take off shaft to obtain optimal meshing of bevel gears within the internal gearbox (IGB) without disassembly of the IGB is enabled by relocating the thrust bearing from the engine sump. The accessory gearbox (AGB) is driven from a power off-take from the turbine spool via the IGB. The radial position of the power take-off bevel gear is established by a radial position of the thrust bearing attached to the exterior of the casing via a housing. Candidate shims are selected from a set each having different thicknesses, the shims are formed of two halves and placed between the housing and the engine casing to adjust the radial position of the thrust bearing and consequently the power take-off bevel gear, without requiring the disassembly of the IGB.Type: ApplicationFiled: February 2, 2022Publication date: May 19, 2022Applicant: Rolls-Royce CorporationInventors: Timothy David Sheridan, Joseph Swift, Daniel Feinstein, Caleb Camara
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Patent number: 11274605Abstract: A method for shimming a thrust bearing for an accessory power take off shaft to obtain optimal meshing of bevel gears within the internal gearbox (IGB) without disassembly of the IGB is enabled by relocating the thrust bearing from the engine sump. The accessory gearbox (AGB) is driven from a power off-take from the turbine spool via the IGB. The radial position of the power take-off bevel gear is established by a radial position of the thrust bearing attached to the exterior of the casing via a housing. Candidate shims are selected from a set each having different thicknesses, the shims are formed of two halves and placed between the housing and the engine casing to adjust the radial position of the thrust bearing and consequently the power take-off bevel gear, without requiring the disassembly of the IGB.Type: GrantFiled: August 30, 2019Date of Patent: March 15, 2022Assignee: ROLLS-ROYCE CORPORATIONInventors: Timothy David Sheridan, Joseph Swift, Daniel Feinstein, Caleb Camara
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Patent number: 11245016Abstract: A semiconductor apparatus has a silicon carbide substrate heavily doped with the first conductivity type and a lightly doped silicon carbide drift region of the first conductivity type over the silicon carbide substrate. A first body region in the drift region is doped with second conductivity type opposite the first. A first source region in the first body region is heavily doped with the first conductivity type. A gate trench is formed in the first source region and first body region. At least one sidewall of the gate trench is parallel to a crystal plane of the silicon carbide structure having greater carrier mobility than a C-face thereof. The gate trench extends a length of the first body region and the source region to a separation region laterally adjacent to the first region wherein the separation region is in the drift region.Type: GrantFiled: January 31, 2020Date of Patent: February 8, 2022Assignee: ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD.Inventors: David Sheridan, Vipindas Pala, Madhur Bobde
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Publication number: 20210369124Abstract: A system for measuring capillary refill time includes a wearable device and a control unit. The wearable device includes a force sensor to obtain a force signal and an optical sensor to obtain an optical signal. The system ensures that an applied force is acceptable in both magnitude and duration, and that a duration over which the applied force is released or removed is acceptable. These factors can establish that a capillary refill time determined or calculated therein is accurate. The system can also determine the capillary refill time based on the force and optical signals obtained by the force and optical sensors, respectively.Type: ApplicationFiled: May 29, 2020Publication date: December 2, 2021Applicant: PROMEDIX, INC.Inventors: David Sheridan, Matthew Lee Hansen, Andrew Kibler, Steven D. Baker, Richard Allen Sunderland, Richard H. Weitzel
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Publication number: 20210246086Abstract: In an aspect, the present disclosure provides a method for the oxidative coupling of methane to generate hydrocarbon compounds containing at least two carbon atoms (C2+ compounds). The method can include mixing a first gas stream comprising methane with a second gas stream comprising oxygen to form a third gas stream comprising methane and oxygen and performing an oxidative coupling of methane (OCM) reaction using the third gas stream to produce a product stream comprising one or more C2+ compounds.Type: ApplicationFiled: February 17, 2021Publication date: August 12, 2021Inventors: Joel CIZERON, Guido RADAELLI, Satish LAKHAPATRI, Erik FREER, Jin Ki HONG, Jarod MCCORMICK, David SHERIDAN, Charles REID, Roberto PELLIZZARI, Samuel WEINBERGER, Justin Dwight EDWARDS
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Publication number: 20210242319Abstract: A semiconductor apparatus has a silicon carbide substrate heavily doped with the first conductivity type and a lightly doped silicon carbide drift region of the first conductivity type over the silicon carbide substrate. A first body region in the drift region is doped with second conductivity type opposite the first. A first source region in the first body region is heavily doped with the first conductivity type. A gate trench is formed in the first source region and first body region. At least one sidewall of the gate trench is parallel to a crystal plane of the silicon carbide structure having greater carrier mobility than a C-face thereof. The gate trench extends a length of the first body region and the source region to a separation region laterally adjacent to the first region wherein the separation region is in the drift region.Type: ApplicationFiled: January 31, 2020Publication date: August 5, 2021Inventors: David Sheridan, Vipindas Pala, Madhur Bobde
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Publication number: 20210139392Abstract: The present disclosure provides systems and methods for producing olefins via an oxidative coupling of methane (OCM) process. The systems and methods may comprise the use of a staged process comprising at least one non-adiabatic section that is in thermal communication with a heat transfer medium and at least one substantially adiabatic section. The systems and methods may also comprise the use of a diluent stream which may improve methane conversion in an OCM reactor and an ethylene/ethane ratio in a post-bed cracking unit. The methods and systems may further comprise injecting oxygen (O2) and a paraffin into a gas stream containing a radical transfer agent to provide a reaction mixture. The reaction mixture may be held in a vessel for a time period greater than an auto-ignition delay time (AIDT), such that the reaction mixture may ignite to liberate heat and convert to a product mixture comprising olefins.Type: ApplicationFiled: November 16, 2020Publication date: May 13, 2021Inventors: Joel CIZERON, David SHERIDAN, Gregory J. TURK, Satish LAKHAPATRI, Rong FAN, Guido RADAELLI, Franciscus J.A. MARTENS, Jarod McCORMICK, David C. GRAUER, Fabio R. ZURCHER, Daniel ROSENBERG
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Patent number: D972336Type: GrantFiled: March 5, 2021Date of Patent: December 13, 2022Assignee: Oregon Health & Science UniversityInventors: Jessica L. Grant, David Sheridan, Samantha Swartz, Greg Hinzmann