Abstract: Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

Abstract: Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

Abstract: Systems and methods for inspecting a specimen are provided. One system includes an illumination subsystem configured to direct light to the specimen at an oblique angle of incidence. The light is polarized in a plane that is substantially parallel to the plane of incidence. The system also includes a detection subsystem configured to detect light scattered from the specimen. The detected light is polarized in a plane that is substantially parallel to the plane of scattering. In addition, the system includes a processor configured to detect defects on the specimen using signals generated by the detection subsystem. In one embodiment, such a system may be configured to detect defects having a size that is less than half of a wavelength of the light directed to the specimen.

Abstract: A taping tool apparatus having an elongated hammer portion that has a central axis and a striker portion, the striker portion having a striking plane perpendicular to the hammer portion central axis; a blade affixed to the hammer portion so that no part of the blade crosses the striker portion striking plane; and a handle affixed to the elongated hammer portion perpendicular to the central axis, whereby a user applying mud to fill indents in drywall with the taping tool can rotate the apparatus a quarter turn to hammer down any raised nails encountered without the blade striking the drywall.

Abstract: A taping tool apparatus having an elongated hammer portion that has a central axis and a striker portion, the striker portion having a striking plane perpendicular to the hammer portion central axis; a blade affixed to the hammer portion so that no part of the blade crosses the striker portion striking plane; and a handle affixed to the elongated hammer portion perpendicular to the central axis, whereby a user applying mud to fill indents in drywall with the taping tool can rotate the apparatus a quarter turn to hammer down any raised nails encountered without the blade striking the drywall.

Abstract: Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

Abstract: Methods and systems for inspection of a wafer are provided. One method includes illuminating the wafer with light at a first wavelength that penetrates into the wafer and light at a second wafer that does not substantially penetrate into the wafer. The method also includes generating output signals responsive to light from the wafer resulting from the illuminating step. In addition, the method includes detecting defects on the wafer using the output signals. The method further includes determining if the defects are subsurface defects or surface defects using the output signals.

Abstract: A system and method for inspection is disclosed. The design includes focusing illumination beams of radiation at an optical axis to an array of illuminated elongated spots on the surface at oblique angle(s) of incidence to the surface, performing a linear scan along a linear axis, wherein the linear axis is offset from the optical axis by a not insubstantial angular quantity, and imaging scattered radiation from the spots onto an array of receivers so that each receiver in the array receives scattered radiation from a corresponding spot in the array of spots.

Abstract: One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

Abstract: Systems and methods for determining a characteristic of a specimen are provided. One system includes an illumination subsystem configured to direct light to a first set of spots on the specimen at a normal angle of incidence and to simultaneously direct light to a second set of spots on the specimen at an oblique angle of incidence. The system also includes a detection subsystem configured to detect light scattered from the first and second sets of spots simultaneously and to generate first output responsive to the light scattered from the first set of spots and second output responsive to the light scattered from the second set of spots. The first and second outputs can be used to determine the characteristic of the specimen.

Abstract: Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.

Abstract: Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

Abstract: Methods and systems for inspecting a specimen are provided. One method includes directing ultraviolet light to a specimen. The method also includes detecting light scattered from the specimen having a selected wavelength range. In addition, the method includes detecting features, defects, or light scattering properties of the specimen using signals representative of the detected light. One inspection system includes an illumination subsystem configured to direct ultraviolet light to a specimen. The system also includes a channel configured to detect light scattered from the specimen having a selected wavelength range. In addition, the system includes a processor configured to detect features, defects, or light scattering properties of the specimen using signals that are representative of the detected light.

Abstract: Computer-implemented methods and systems for determining a configuration for a light scattering inspection system are provided. One computer-implemented method includes determining a three-dimensional map of signal-to-noise ratio values for data that would be acquired for a specimen and a potential defect on the specimen by the light scattering inspection system across a scattering hemisphere of the inspection system. The method also includes determining one or more portions of the scattering hemisphere in which the signal-to-noise ratio values are higher than in other portions of the scattering hemisphere based on the three-dimensional map. In addition, the method includes determining a configuration for a detection subsystem of the inspection system based on the one or more portions of the scattering hemisphere.

Abstract: Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

Abstract: A dark field surface inspection tool and system are disclosed herein. The tool includes an illumination source capable of scanning a light beam onto an inspection surface. Light scattered by each inspection point is captured as image data by a photo detector array arranged at a fourier plane. The images captured are adaptively filtered to remove a portion of the bright pixels from the images to generate filtered images. The filtered images are then analyzed to detect defects in the inspection surface. Methods of the invention include using die-to-die comparison to identify bright portions of scattering patterns and generate unique image filters associated with those patterns. The associated images are then filtered to generate filtered images which are then used to detect defects. Also, data models of light scattering behavior can be used to generate filters.

Abstract: Methods and systems for inspection of a wafer are provided. One method includes illuminating the wafer with light at a first wavelength that penetrates into the wafer and light at a second wafer that does not substantially penetrate into the wafer. The method also includes generating output signals responsive to light from the wafer resulting from the illuminating step. In addition, the method includes detecting defects on the wafer using the output signals. The method further includes determining if the defects are subsurface defects or surface defects using the output signals.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: A system and method for inspection is disclosed. The design includes focusing illumination beams of radiation at an optical axis to an array of illuminated elongated spots on the surface at oblique angle(s) of incidence to the surface, performing a linear scan along a linear axis, wherein the linear axis is offset from the optical axis by a not insubstantial angular quantity, and imaging scattered radiation from the spots onto an array of receivers so that each receiver in the array receives scattered radiation from a corresponding spot in the array of spots.

Abstract: An inspection tool embodiment includes an illumination source for directing a light beam onto a workpiece to generate scattered light that includes the ordinary scattering pattern of the workpiece as well as light scattered from defects of the workpiece. The embodiment includes a programmable light selection array that receives light scattered from the workpiece and selectively directs the light scattered from defects onto a photosensor which detects the defect signal. Processing circuitry receives the defect signal and conducts surface analysis of the workpiece that can include the characterizing of defects of the workpiece. The programmable light selection arrays can include, but are not limited to, reflector arrays and filter arrays. The invention also includes associated surface inspection methods.