Patents by Inventor David Starikov
David Starikov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9691933Abstract: The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.Type: GrantFiled: March 24, 2015Date of Patent: June 27, 2017Assignee: UNIVERSITY OF HOUSTON SYSTEMInventors: Abdelhak Bensaoula, David Starikov, Rajeev Pillai
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Patent number: 9671507Abstract: The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.Type: GrantFiled: March 24, 2015Date of Patent: June 6, 2017Assignee: UNIVERSITY OF HOUSTON SYSTEMInventors: Abdelhak Bensaoula, David Starikov, Rajeev Pillai
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Publication number: 20150280045Abstract: The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.Type: ApplicationFiled: March 24, 2015Publication date: October 1, 2015Inventors: Abdelhak Bensaoula, David Starikov, Rajeev Pillai
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Publication number: 20150276950Abstract: The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.Type: ApplicationFiled: March 24, 2015Publication date: October 1, 2015Inventors: Abdelhak Bensaoula, David Starikov, Rajeev Pillai
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Patent number: 8962151Abstract: Improved methods of bonding solid materials include a step of fabricating a micro-column array (MCA) on at least one surface to be bonded. The MCA formation process can be modified to cause and/or prevent chemical alteration of the surface being treated or to deposit a coating on the surface. In a preferred embodiment, the MCA is fabricated by laser treating the surface, such as by laser ablation.Type: GrantFiled: August 10, 2007Date of Patent: February 24, 2015Assignee: Integrated Micro Sensors, Inc.Inventors: David Starikov, Abdelhak Bensaoula
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Patent number: 7566875Abstract: A photodetector having sensitivity in a wide temperature range in both an infrared and an ultraviolet band is provided. The photodetector is formed on a single chip and is designed to be blind to solar or visible radiation. Structures disclosed allow fast and efficient detection of signals with high spatial and temporal resolution. Such sensors may be used for multi-pixel focal arrays and applied for fire detection applications, various space- and military-related applications and other applications. A method for increasing rejection of visible light by the IR sensitive material is also provided.Type: GrantFiled: March 19, 2008Date of Patent: July 28, 2009Assignee: Integrated Micro Sensors Inc.Inventors: David Starikov, Abdelhak Bensaoula
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Publication number: 20080213612Abstract: Improved methods of bonding solid materials include a step of fabricating a micro-column array (MCA) on at least one surface to be bonded. The MCA formation process can be modified to cause and/or prevent chemical alteration of the surface being treated or to deposit a coating on the surface. In a preferred embodiment, the MCA is fabricated by laser treating the surface, such as by laser ablation.Type: ApplicationFiled: August 10, 2007Publication date: September 4, 2008Inventors: David Starikov, Abdelhak Bensaoula
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Publication number: 20080157253Abstract: A photodetector having sensitivity in a wide temperature range in both an infrared and an ultraviolet band is provided. The photodetector is formed on a single chip and is designed to be blind to solar or visible radiation. Structures disclosed allow fast and efficient detection of signals with high spatial and temporal resolution. Such sensors may be used for multi-pixel focal arrays and applied for fire detection applications, various space- and military-related applications and other applications. A method for increasing rejection of visible light by the IR sensitive material is also provided.Type: ApplicationFiled: March 19, 2008Publication date: July 3, 2008Applicant: INTEGRATED MICRO SENSORS INC.Inventors: David Starikov, Abdelhak Bensaoula
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Patent number: 7381966Abstract: A photodetector having sensitivity in both an infrared and an ultraviolet band is provided. The photodetector is formed on a single chip and is designed to be blind to solar or visible radiation. Structures disclosed allow fast and efficient detection of signals with high spatial and temporal resolution. Such sensors may be used for multi-pixel focal arrays and applied for fire detection applications, various space- and military-related applications and other applications.Type: GrantFiled: April 13, 2006Date of Patent: June 3, 2008Assignee: Integrated Micro Sensors, Inc.Inventors: David Starikov, Abdelhak Bensaoula
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Publication number: 20070241279Abstract: A photodetector having sensitivity in both an infrared and an ultraviolet band is provided. The photodetector is formed on a single chip and is designed to be blind to solar or visible radiation. Structures disclosed allow fast and efficient detection of signals with high spatial and temporal resolution. Such sensors may be used for multi-pixel focal arrays and applied for fire detection applications, various space- and military-related applications and other applications.Type: ApplicationFiled: April 13, 2006Publication date: October 18, 2007Inventors: David Starikov, Abdelhak Bensaoula
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Patent number: 6881979Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.Type: GrantFiled: August 18, 2003Date of Patent: April 19, 2005Assignee: University of HoustonInventors: David Starikov, Igor Berishev, Abdelhak Bensaoula
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Publication number: 20040080011Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.Type: ApplicationFiled: August 18, 2003Publication date: April 29, 2004Applicant: UNIVERSITY OF HOUSTONInventors: David Starikov, Igor Berishev, Abdelhak Bensaoula
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Patent number: 6608360Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.Type: GrantFiled: December 15, 2000Date of Patent: August 19, 2003Assignee: University of HoustonInventors: David Starikov, Igor Berishev, Abdelhak Bensaoula
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Publication number: 20020074553Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.Type: ApplicationFiled: December 15, 2000Publication date: June 20, 2002Inventors: David Starikov, Igor Berishev, Abdelhak Bensaoula