Abstract: Provided herein are composite conductors, characterized by having copper deposits inside the bulk rather than on the outer surface of a non-metallic conductive porous matrix, such as CNT fabric, as well as a process for obtaining the same. The composite conductors provided herein are also characterized by a low specific weight and a high ampacity compared to metal conductors of similar size and shape.

Abstract: A process for electroplating high adhesion copper layer on a surface of a highly oxidizable metal in an invariable container, and products produced by this process are provided.

Abstract: A composition that rapidly passivates copper-containing surface to yield a uniform layer of insoluble copper oxide, the composition being useful in chemical-mechanical planarization of copper-containing surfaces is disclosed. The composition is a solution having a pH of equal to or greater than 9 and having an oxidation potential sufficient to oxidize the surface to form non-soluble copper oxides. Also disclosed are methods of making and using the composition.

Abstract: A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in solutions that do not contain hydrofluoric acid (HF-free solutions). The method includes immersing an as-cut semiconductor material in an etching solution, and positive biasing at atypically highly positive (anodic) potentials, thereby significantly increasing the value of the anodic current density (measured as A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination on the semiconductor material surface contacted and wetted by the etching solution. This is done for a necessary and sufficient period of time to enable a positive synergistic effect on the rate and extent of etching of the semiconductor material therefrom.

Abstract: A composition that rapidly passivates copper-containing surface to yield a uniform layer of insoluble copper oxide, the composition being useful in chemical-mechanical planarization of copper-containing surfaces is disclosed. The composition is a solution having a pH of equal to or greater than 9 and having an oxidation potential sufficient to oxidize the surface to form non-soluble copper oxides. Also disclosed are methods of making and using the composition.

Abstract: A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in hydrofluoride (HF)-free solutions. The method includes subjecting one of: a polished material; and an as-cut semiconductor material to an etching solution. The method also includes positive biasing at atypically highly positive (anodic) potentials. The specifically controlled and directed illumination of the positively biased semiconductor material surface contacted and wetted by the etching solution significantly increases the value of the anodic current density (A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination by light of the semiconductor material surface contacted and wetted by the etching solution.

Abstract: Texturing a semiconductor material using negative potential dissolution (NPD), by applying highly negative (cathodic) potentials during conditions of wet etching, and a textured semiconductor material formed therefrom. Semiconductor material is subjected to wet etching conditions, negative biasing at more negative than ?60 V, and, specifically controlled and directed illumination by optically processed non-ambient light, resulting in significant increase in values of cathodic current density, and, rate and extent of texturing, of the semiconductor material as a function of time. As cut unpolished semiconductor material is subjected to wet etching conditions and negative biasing, during non-specifically controlled and directed illumination by unprocessed ambient light.

Abstract: A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.

Abstract: A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.

Abstract: There is provided a process for etching a semiconductor material, comprising the steps of: providing an electrochemical cell containing an etching electrolyte, the etching electrolyte being selected from the group of acidic electrolyte solutions, alkaline solutions, neutral solutions, and molten electrolytes; immersing the semiconductor material in the etching electrolyte, whereby at least one surface of the semiconductor material contacts the etching electrolyte; thereafter negatively biasing the semiconductor material; and while continuing to negatively bias the semiconductor material, illuminating at least part of the at least one surface of the semiconductor material which contacts the etching electrolyte with light selected from the group of ultraviolet, visible, and infrared light. There is also provided an apparatus for effecting the process of the invention, as well as semiconductor materials so etched.