Patents by Inventor David Storrs Pratt

David Storrs Pratt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pitch-halving integrated circuit process
    Patent number: 9324721
    Abstract: A pitch-halving IC process is described. Parallel base line patterns are formed over a substrate, each being connected with a hammerhead pattern at a first or second side of the base line patterns, wherein the hammerhead patterns are arranged at the first side and the second side alternately, and the hammerhead patterns at the first or second side are arranged in a staggered manner. The above patterns are trimmed. A spacer is formed on the sidewalls of each base line pattern and the corresponding hammerhead pattern, including a pair of derivative line patterns, a loop pattern around the hammerhead pattern, and a turning pattern at the other end of the base line pattern. The base line patterns and the hammerhead patterns are removed. A portion of each loop pattern and at least a portion of each turning pattern are removed to disconnect each pair of derivative line patterns.
    Type: Grant
    Filed: November 26, 2015
    Date of Patent: April 26, 2016
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: David Storrs Pratt, Richard Housley
  • PITCH-HALVING INTEGRATED CIRCUIT PROCESS
    Publication number: 20160079249
    Abstract: A pitch-halving IC process is described. Parallel base line patterns are formed over a substrate, each being connected with a hammerhead pattern at a first or second side of the base line patterns, wherein the hammerhead patterns are arranged at the first side and the second side alternately, and the hammerhead patterns at the first or second side are arranged in a staggered manner. The above patterns are trimmed. A spacer is formed on the sidewalls of each base line pattern and the corresponding hammerhead pattern, including a pair of derivative line patterns, a loop pattern around the hammerhead pattern, and a turning pattern at the other end of the base line pattern. The base line patterns and the hammerhead patterns are removed. A portion of each loop pattern and at least a portion of each turning pattern are removed to disconnect each pair of derivative line patterns.
    Type: Application
    Filed: November 26, 2015
    Publication date: March 17, 2016
    Inventors: David Storrs Pratt, Richard Housley
  • Pitch-halving integrated circuit process and integrated circuit structure made thereby
    Patent number: 9245844
    Abstract: A pitch-halving IC process is described. Parallel base line patterns are formed over a substrate, each being connected with a hammerhead pattern at a first or second side of the base line patterns, wherein the hammerhead patterns are arranged at the first side and the second side alternately, and the hammerhead patterns at the first or second side are arranged in a staggered manner. The above patterns are trimmed. A spacer is formed on the sidewalls of each base line pattern and the corresponding hammerhead pattern, including a pair of derivative line patterns, a loop pattern around the hammerhead pattern, and a turning pattern at the other end of the base line pattern. The base line patterns and the hammerhead patterns are removed. A portion of each loop pattern and at least a portion of each turning pattern are removed to disconnect each pair of derivative line patterns.
    Type: Grant
    Filed: March 17, 2013
    Date of Patent: January 26, 2016
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: David Storrs Pratt, Richard Housley
  • PITCH-HALVING INTEGRATED CIRCUIT PROCESS AND INTEGRATED CIRCUIT STRUCTURE MADE THEREBY
    Publication number: 20140264893
    Abstract: A pitch-halving IC process is described. Parallel base line patterns are formed over a substrate, each being connected with a hammerhead pattern at a first or second side of the base line patterns, wherein the hammerhead patterns are arranged at the first side and the second side alternately, and the hammerhead patterns at the first or second side are arranged in a staggered manner. The above patterns are trimmed. A spacer is formed on the sidewalls of each base line pattern and the corresponding hammerhead pattern, including a pair of derivative line patterns, a loop pattern around the hammerhead pattern, and a turning pattern at the other end of the base line pattern. The base line patterns and the hammerhead patterns are removed. A portion of each loop pattern and at least a portion of each turning pattern are removed to disconnect each pair of derivative line patterns.
    Type: Application
    Filed: March 17, 2013
    Publication date: September 18, 2014
    Applicant: Nanya Technology Corporation
    Inventors: David Storrs Pratt, Richard Housley