Abstract: A timing controller includes a pipelined delay chain configured to process commands and control signals associated with the commands between a first device and a plurality of second devices having different timing requirements. The pipelined delay chain includes a cascaded arrangement of a primary delay chain, at least one secondary delay chain and a plurality of control signal sequence generators responsive to signals generated by the at least one secondary delay chain. The primary delay chain may include a plurality of serially-linked registers configured to support a pipelining of the commands and a stack configured to support operations to push and pop the control signals associated with the commands to and from the stack.

Abstract: A multiple time domain synchronizer includes a data pipeline containing a plurality of serially-connected delay elements therein. A latency selection circuit is provided, which has a plurality of inputs electrically coupled to outputs of a corresponding plurality of delay elements in the data pipeline. The latency selection circuit is configured to pass a data pipeline signal from an output of a selected one of the plurality of delay elements in response to a latency control signal. A synchronization circuit is provided, which is electrically coupled to an output of the latency selection circuit. This synchronization circuit, which includes first and second unequal timing paths therein, is responsive to a clock that synchronizes capture of the data pipeline signal selected by the latency selection circuit and a destination code that selects one of the first and second unequal timing paths to be traversed by the captured data pipeline signal as active.

Abstract: An integrated circuit chip includes a plurality of independent FIFO memory devices that are each configured to support all four combinations of DDR and SDR write modes and DDR and SDR read modes and collectively configured to support all four multiplexer, demultiplexer, broadcast and multi-Q operating modes. The multi-Q mode of operation supports write path queue switching that is free of write word fall-through and read path queue switching that is free of read word fall-through. The multi-Q mode also supports write path queue switching on every write cycle in both SDR and DDR write modes and independent read path queue switching on every read cycle in both SDR and DDR read modes.

Abstract: Integrated circuit memory devices support write and read burst modes of operation with uniformly short interconnect paths that provide high-speed memory access timing characteristics. These memory devices include a semiconductor chip having a memory core therein and at least N bond pads thereon. The memory core is configured to support a xN burst-M write mode of operation at QDR and/or DDR rates, where N is greater than four and M is greater than one. The memory core is further configured to support one-to-one mapping between burst-M write data received at each of the N bond pads and corresponding ones of N memory blocks in the memory core during the xN burst-M write mode of operation.

Abstract: An integrated circuit chip includes a plurality of independent FIFO memory devices that are each configured to support all four combinations of DDR and SDR write modes and DDR and SDR read modes and collectively configured to support all four multiplexer, demultiplexer, broadcast and multi-Q operating modes.