Patents by Inventor David SUNG

David SUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11947915
    Abstract: A document is divided into sections based on a characteristic of the text in the document. Characteristics may include specific characters such as paragraph breaks or selected punctuation, the topics or categories of the text, or a quantity of text in each section. Each section of the document may be represented by an embedding vector in a semantic embedding space. Values are determined based on the text in each section and the semantic characteristics of each section, such as word order, capitalization, punctuation, and word meaning. When a query is received, a vector value representing the query is determined based on the text and semantic characteristics of the query. Based on the similarity between the values determined for the query and those determined for the sections of a document, the specific section of a potentially large document that most closely matches the query is determined and included in a response.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: April 2, 2024
    Inventors: Chia-Hui Shen, Suchit Agarwal, David Sung-Eun Lim, Pratyus Patnaik, Pierre Rappolt, Tanya Butani, William S. Potter
  • Patent number: 11769048
    Abstract: In an example embodiment, a single machine learned model that allows for ranking of entities across all of the different combinations of node types and edge types is provided. The solution calibrates the scores from Edge-FPR models to a single scale. Additionally, the solution may utilize a per-edge type multiplicative factor dictated by the true importance of an edge type, which is learned through a counterfactual experimentation process. The solution may additionally optimize on a single, common downstream metric, specifically downstream interactions that can be compared against each other across all combinations of node types and edge types.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: September 26, 2023
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Parag Agrawal, Ankan Saha, Yafei Wang, Yan Wang, Eric Lawrence, Ashwin Narasimha Murthy, Aastha Nigam, Bohong Zhao, Albert Lingfeng Cui, David Sung, Aastha Jain, Abdulla Mohammad Al-Qawasmeh
  • Patent number: 11715639
    Abstract: A method of manufacturing a semiconductor structure includes depositing a silicon layer over a substrate, removing a portion of the silicon layer to form a gate stack, and performing a hydrogen treatment on the gate stack to repair a plurality of voids in the stack structure.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: August 1, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yuan-Chun Sie, Po-Yi Tseng, Chien-Hao Chen, Ching-Lun Lai, David Sung, Ming-Feng Hsieh, Yi-Chi Huang
  • Publication number: 20220415490
    Abstract: Disclosed is an application which is stored in a computer-readable medium and executes an operation of a terminal device. An operation performed in the present application comprises the steps of: providing a UI screen for receiving an input of symptom information; when a user's symptom information is input through the UI screen, transmitting the symptom information and a waiting number request to a hospital management server; receiving a waiting number corresponding to the waiting number request from the hospital management server, and providing the UI screen including the received waiting number; transmitting the user's identification information to an application server; and controlling the application server to transmit the user's identification information to the hospital management server.
    Type: Application
    Filed: December 14, 2020
    Publication date: December 29, 2022
    Inventor: David Sung Joon SHIN, Jr.
  • Publication number: 20220083853
    Abstract: In an example embodiment, a single machine learned model that allows for ranking of entities across all of the different combinations of node types and edge types is provided. The solution calibrates the scores from Edge-FPR models to a single scale. Additionally, the solution may utilize a per-edge type multiplicative factor dictated by the true importance of an edge type, which is learned through a counterfactual experimentation process. The solution may additionally optimize on a single, common downstream metric, specifically downstream interactions that can be compared against each other across all combinations of node types and edge types.
    Type: Application
    Filed: September 15, 2020
    Publication date: March 17, 2022
    Inventors: Parag Agrawal, Ankan Saha, Yafei Wang, Yan Wang, Eric Lawrence, Ashwin Narasimha Murthy, Aastha Nigam, Bohong Zhao, Albert Lingfeng Cui, David Sung, Aastha Jain, Abdulla Mohammad Al-Qawasmeh
  • Publication number: 20200297248
    Abstract: Disclosed herein is to a posture monitoring device for measuring and correcting a user's posture by utilizing a resistance element which is elastic and has a resistance which is changed according to mechanical strain. The posture monitoring device includes a first elastic resistance element and a second elastic resistance element which are configured to be attached onto skins of the first part and the second part or inserted into the skins, disposed to measure the degree of stretching of the skin of the first part in a longitudinal direction of the spinal column, and made of a conductive material to have elasticity, a power supply device for applying a current or a voltage to the first elastic resistance element, and the second elastic resistance element, and a communication module for transmitting data output from the first elastic resistance element and the second elastic resistance element to a controller.
    Type: Application
    Filed: August 31, 2018
    Publication date: September 24, 2020
    Inventor: David Sung Joon Shin, JR.
  • Publication number: 20180151372
    Abstract: A method of manufacturing a semiconductor structure includes depositing a silicon layer over a substrate, removing a portion of the silicon layer to form a gate stack, and performing a hydrogen treatment on the gate stack to repair a plurality of voids in the stack structure.
    Type: Application
    Filed: September 12, 2017
    Publication date: May 31, 2018
    Inventors: Yuan-Chun SIE, Po-Yi TSENG, Chien-Hao CHEN, Ching-Lun LAI, David SUNG, Ming-Feng HSIEH, Yi-Chi HUANG