Patents by Inventor David T. PETZOLD
David T. PETZOLD has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10991662Abstract: A semiconductor device includes a transistor implemented over an oxide layer, one or more electrical connections to the transistor, one or more dielectric layers formed over at least a portion of the electrical connections, an electrical element disposed over the one or more dielectric layers, the electrical element being in electrical communication with the transistor via the one or more electrical connections, a patterned form of sacrificial material covering at least a portion of the electrical element, and an interface layer covering at least a portion of the one or more dielectric layers and the sacrificial material.Type: GrantFiled: February 1, 2020Date of Patent: April 27, 2021Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield
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Patent number: 10991661Abstract: A method for fabricating a semiconductor device involves providing a transistor device formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate, applying an interface material below to at least a portion of the oxide layer, removing a portion of the interface material to form a trench, and at least partially covering the interface material and the trench with a substrate layer to form a cavity.Type: GrantFiled: January 31, 2020Date of Patent: April 27, 2021Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield
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Patent number: 10865101Abstract: Discharge circuits, devices and methods. In some embodiments, a MEMS device can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS device can further include a discharge circuit implemented relative to the electromechanical assembly. The discharge circuit can be configured to provide a preferred arcing path during a discharge condition affecting the electromechanical assembly. The MEMS device can be, for example, a switching device, a capacitance device, a gyroscope sensor device, an accelerometer device, a surface acoustic wave (SAW) device, or a bulk acoustic wave (BAW) device. The discharge circuit can include a spark gap assembly having one or more spark gap elements configured to facilitate the preferred arcing path.Type: GrantFiled: November 13, 2018Date of Patent: December 15, 2020Assignee: Skyworks Solutions, Inc.Inventors: Jerod F. Mason, Dylan Charles Bartle, David Scott Whitefield, David T. Petzold, Dogan Gunes, Paul T. Dicarlo
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Publication number: 20200176398Abstract: A semiconductor device includes a transistor implemented over an oxide layer, one or more electrical connections to the transistor, one or more dielectric layers formed over at least a portion of the electrical connections, an electrical element disposed over the one or more dielectric layers, the electrical element being in electrical communication with the transistor via the one or more electrical connections, a patterned form of sacrificial material covering at least a portion of the electrical element, and an interface layer covering at least a portion of the one or more dielectric layers and the sacrificial material.Type: ApplicationFiled: February 1, 2020Publication date: June 4, 2020Inventors: David T. PETZOLD, David Scott WHITEFIELD
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Publication number: 20200168564Abstract: A method for fabricating a semiconductor device involves providing a transistor device formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate, applying an interface material below to at least a portion of the oxide layer, removing a portion of the interface material to form a trench, and at least partially covering the interface material and the trench with a substrate layer to form a cavityType: ApplicationFiled: January 31, 2020Publication date: May 28, 2020Inventors: David T. PETZOLD, David Scott WHITEFIELD
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Patent number: 10665552Abstract: A method for fabricating a radio-frequency device involves providing a semiconductor wafer including a transistor device, applying a form of sacrificial material on the semiconductor wafer, applying an interface material over the form of sacrificial material, and removing at least a portion of the form of sacrificial material to form a cavity at least partially covered by the interface material.Type: GrantFiled: March 5, 2019Date of Patent: May 26, 2020Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield
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Patent number: 10658308Abstract: A method for fabricating a semiconductor die involves providing a semiconductor substrate, forming a plurality of active devices and a plurality of passive devices over the semiconductor substrate, forming one or more electrical connections to the plurality of active devices and the plurality of passive devices, forming one or more dielectric layers over at least a portion of the electrical connections, applying an interface material over at least a portion of the one or more dielectric layers, removing portions of the interface material to form a plurality of trenches, and covering at least a portion of the interface material and the plurality of trenches with a substrate layer to form a plurality of radio-frequency isolation cavities.Type: GrantFiled: February 28, 2019Date of Patent: May 19, 2020Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield
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Patent number: 10553549Abstract: A semiconductor device includes a transistor device implemented over an oxide layer, an interface layer applied below at least a portion of the oxide layer, the interface layer having a trench formed therein, and a substrate layer covering at least a portion of the interface layer and the trench to form a cavity.Type: GrantFiled: December 6, 2017Date of Patent: February 4, 2020Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield
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Patent number: 10553547Abstract: Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET), forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, and disposing an electrical element over the one or more dielectric layers, the electrical element being in electrical communication with the FET via the one or more electrical connections. RF device fabrication further involves covering at least a portion of the electrical element with a sacrificial material, applying an interface material over the one or more dielectric layers, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.Type: GrantFiled: May 13, 2016Date of Patent: February 4, 2020Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield
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Publication number: 20190198456Abstract: A method for fabricating a semiconductor die involves providing a semiconductor substrate, forming a plurality of active devices and a plurality of passive devices over the semiconductor substrate, forming one or more electrical connections to the plurality of active devices and the plurality of passive devices, forming one or more dielectric layers over at least a portion of the electrical connections, applying an interface material over at least a portion of the one or more dielectric layers, removing portions of the interface material to form a plurality of trenches, and covering at least a portion of the interface material and the plurality of trenches with a substrate layer to form a plurality of radio-frequency isolation cavities.Type: ApplicationFiled: February 28, 2019Publication date: June 27, 2019Inventors: David T. PETZOLD, David Scott WHITEFIELD
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Publication number: 20190198458Abstract: A method for fabricating a radio-frequency device involves providing a semiconductor wafer including a transistor device, applying a form of sacrificial material on the semiconductor wafer, applying an interface material over the form of sacrificial material, and removing at least a portion of the form of sacrificial material to form a cavity at least partially covered by the interface material.Type: ApplicationFiled: March 5, 2019Publication date: June 27, 2019Inventors: David T. PETZOLD, David Scott WHITEFIELD
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Publication number: 20190144266Abstract: Discharge circuits, devices and methods. In some embodiments, a MEMS device can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS device can further include a discharge circuit implemented relative to the electromechanical assembly. The discharge circuit can be configured to provide a preferred arcing path during a discharge condition affecting the electromechanical assembly. The MEMS device can be, for example, a switching device, a capacitance device, a gyroscope sensor device, an accelerometer device, a surface acoustic wave (SAW) device, or a bulk acoustic wave (BAW) device. The discharge circuit can include a spark gap assembly having one or more spark gap elements configured to facilitate the preferred arcing path.Type: ApplicationFiled: November 13, 2018Publication date: May 16, 2019Inventors: Jerod F. MASON, Dylan Charles BARTLE, David Scott WHITEFIELD, David T. PETZOLD, Dogan GUNES, Paul T. DICARLO
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Patent number: 10249576Abstract: A method for fabricating a semiconductor device involves providing a semiconductor substrate, forming an oxide layer in the semiconductor substrate, forming a transistor device over the oxide layer, removing at least part of a backside of the semiconductor substrate, applying a sacrificial material below the oxide layer, covering the sacrificial material with an interface material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.Type: GrantFiled: October 26, 2017Date of Patent: April 2, 2019Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield
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Patent number: 10249575Abstract: A method for fabricating a semiconductor device involves providing a transistor device, forming one or more electrical connections to the transistor device, forming one or more dielectric layers over at least a portion of the electrical connections, applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.Type: GrantFiled: October 24, 2017Date of Patent: April 2, 2019Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield
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Patent number: 10125011Abstract: MEMS devices having discharge circuits. In some embodiments, a MEMS device can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS device can further include a discharge circuit implemented relative to the electromechanical assembly. The discharge circuit can be configured to provide a preferred arcing path during a discharge condition affecting the electromechanical assembly. The MEMS device can be, for example, a switching device, a capacitance device, a gyroscope sensor device, an accelerometer device, a surface acoustic wave (SAW) device, or a bulk acoustic wave (BAW) device. The discharge circuit can include a spark gap assembly having one or more spark gap elements configured to facilitate the preferred arcing path.Type: GrantFiled: April 13, 2015Date of Patent: November 13, 2018Assignee: Skyworks Solutions, Inc.Inventors: Jerod F. Mason, Dylan Charles Bartle, David Scott Whitefield, David T. Petzold, Dogan Gunes, Paul T. DiCarlo
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Publication number: 20180108620Abstract: A semiconductor device includes a transistor device implemented over an oxide layer, an interface layer applied below at least a portion of the oxide layer, the interface layer having a trench formed therein, and a substrate layer covering at least a portion of the interface layer and the trench to form a cavity.Type: ApplicationFiled: December 6, 2017Publication date: April 19, 2018Inventors: David T. PETZOLD, David Scott WHITEFIELD
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Publication number: 20180076222Abstract: A method for fabricating a semiconductor device involves providing a semiconductor substrate, forming an oxide layer in the semiconductor substrate, forming a transistor device over the oxide layer, removing at least part of a backside of the semiconductor substrate, applying a sacrificial material below the oxide layer, covering the sacrificial material with an interface material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.Type: ApplicationFiled: October 26, 2017Publication date: March 15, 2018Inventors: David T. PETZOLD, David Scott WHITEFIELD
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Publication number: 20180076791Abstract: A method for fabricating a semiconductor device involves providing a transistor device, forming one or more electrical connections to the transistor device, forming one or more dielectric layers over at least a portion of the electrical connections, applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.Type: ApplicationFiled: October 24, 2017Publication date: March 15, 2018Inventors: David T. PETZOLD, David Scott WHITEFIELD
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Patent number: 9859225Abstract: Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.Type: GrantFiled: May 13, 2016Date of Patent: January 2, 2018Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield
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Patent number: 9837362Abstract: Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET), forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, and disposing an electrical element at least partially above the one or more dielectric layers, the electrical element being in electrical communication with the FET via the one or more electrical connections. RF device fabrication further involves applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench above at least a portion of the electrical element, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity, the electrical element being disposed at least partially within the cavity.Type: GrantFiled: May 13, 2016Date of Patent: December 5, 2017Assignee: Skyworks Solutions, Inc.Inventors: David T. Petzold, David Scott Whitefield