Patents by Inventor DAVID TANER BILIR

DAVID TANER BILIR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210126148
    Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
    Type: Application
    Filed: January 5, 2021
    Publication date: April 29, 2021
    Inventors: Ferran SUAREZ, Ting LIU, Homan B. YUEN, David Taner BILIR, Arsen SUKIASYAN, Jordan LANG
  • Patent number: 10916675
    Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: February 9, 2021
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Ferran Suarez, Ting Liu, Homan B. Yuen, David Taner Bilir, Arsen Sukiasyan, Jordan Lang
  • Publication number: 20190280143
    Abstract: Semiconductor light absorption devices such as multi junction photovoltaic cells include a chirped distributed Bragg reflector beneath a junction. The chirped distributed Bragg reflector provides a high reflectivity over a broad range of wavelengths and has improved angular tolerance so as to provide increased absorption within an overlying junction over a broader range of wavelengths and incident angles.
    Type: Application
    Filed: March 11, 2019
    Publication date: September 12, 2019
    Inventors: DING DING, PHILIP DOWD, FERRAN SUAREZ, DAVID TANER BILIR, AYMERIC MAROS
  • Publication number: 20190189826
    Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
    Type: Application
    Filed: February 22, 2019
    Publication date: June 20, 2019
    Inventors: FERRAN SUAREZ, TING LIU, HOMAN B. YUEN, DAVID TANER BILIR, ARSEN SUKIASYAN, JORDAN LANG
  • Publication number: 20170110613
    Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
    Type: Application
    Filed: October 19, 2015
    Publication date: April 20, 2017
    Inventors: FERRAN SUAREZ, TING LIU, HOMAN B. YUEN, DAVID TANER BILIR, ARSEN SUKIASYAN, JORDAN LANG