Patents by Inventor David (Tawei) Lin

David (Tawei) Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Barrier ruthenium chemical mechanical polishing slurry
    Patent number: 11505718
    Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: November 22, 2022
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • BARRIER RUTHENIUM CHEMICAL MECHANICAL POLISHING COMPOSITION
    Publication number: 20220162478
    Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.
    Type: Application
    Filed: February 11, 2022
    Publication date: May 26, 2022
    Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • Bulk ruthenium chemical mechanical polishing composition
    Patent number: 11279850
    Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: March 22, 2022
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • BARRIER RUTHENIUM CHEMICAL MECHANICAL POLISHING SLURRY
    Publication number: 20210261822
    Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
    Type: Application
    Filed: May 12, 2021
    Publication date: August 26, 2021
    Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • Barrier ruthenium chemical mechanical polishing slurry
    Patent number: 11034859
    Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: June 15, 2021
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
  • BULK RUTHENIUM CHEMICAL MECHANICAL POLISHING COMPOSITION
    Publication number: 20190300750
    Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.
    Type: Application
    Filed: March 12, 2019
    Publication date: October 3, 2019
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen
  • BARRIER RUTHENIUM CHEMICAL MECHANICAL POLISHING SLURRY
    Publication number: 20190300749
    Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
    Type: Application
    Filed: March 11, 2019
    Publication date: October 3, 2019
    Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen