Abstract: A heat-assisted magnetic recording (HAMR) disk has multiple independent data layers, each data layer being a continuous non-patterned layer of magnetizable material. Each data layer can store data independent and not related to the data stored in the other data layers. The data layers are separated by a nonmagnetic spacer layer (SL) and each data layer is formed of high-anisotropy (Ku) material so that the coercivities of lower and upper data layers (RL1 and RL2) are greater than the magnetic write field. At a high laser power both RL1 and RL2 are heated to above their respective Curie temperatures and data is recorded in both RL1 and RL2. At low laser power only upper RL2 is heated to above its Curie temperature and data is recorded only in RL2. The SL prevents lower RL1 from being heated to above its Curie temperature at low laser power.

Abstract: A heat-assisted magnetic recording medium has a heat-sink layer, a chemically-ordered FePt alloy magnetic layer and a perovskite oxide intermediate layer between the heat-sink layer and the magnetic layer. The perovskite oxide intermediate layer may function as both a seed layer for the magnetic layer and a thermal barrier layer, as just a seed layer for the magnetic layer, or as just a thermal barrier layer. The intermediate layer is formed of a material selected from a ABO3 perovskite oxide (where A is selected from one or more of Ba, Sr and Ca and B is selected from one or more of Zr, Ce, Hf, Sn, Ir, and Nb), and a A2REBO6 rare earth double perovskite oxide (where RE is a rare earth element, A is selected from Ba, Sr and Ca, and B is selected from Nb and Ta).

Abstract: A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.

Abstract: A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.

Abstract: A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.

Abstract: A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.

Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.

Abstract: A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in a single ion beam etching step. The laser may be used on a thermally assisted recording head to produce a polarized beam that is aligned with a track direction of the disk.

Abstract: A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in a single ion beam etching step. The laser may be used on a thermally assisted recording head to produce a polarized beam that is aligned with a track direction of the disk.

Abstract: A horizontal cavity, surface emitting laser (HCSEL) with internal polarization rotation is used in thermally assisted recording in hard disk drives. The desired polarization of the laser is accomplished with two beam reflections off of facets within the diode. The facets are formed in a single ion beam etching step. This device can be used in a thermally assisted recording head to produce polarization incident on the disk aligned with the direction of the tracks on the disk.

Abstract: A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.

Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.

Abstract: A method and apparatus for write enable and write inhibit for high density spin torque three dimensional (3D) memory arrays.

Abstract: A perpendicular magnetic recording medium, usable for either continuous or patterned media, has a recording layer structure (RLS) of first and second perpendicular magnetic layers (PM1, PM2) and an antiferromagnetically coupling (AFC) layer and a ferromagnetic switching layer (SWL) between PM1 and PM2. The magnetic recording system uses heat to assist in the reading and/or writing of data. The SWL is a Co/Ni multilayer with a Curie temperature (TC-SWL) less than the Curie temperatures of PM1 and PM2. At room temperature, there is ferromagnetic coupling between SWL and the upper ferromagnetic layer (PM2) so that the magnetizations of SWL and PM2 are parallel, and antiferromagnetic coupling between SWL and the lower ferromagnetic layer (PM1) across the AFC layer so that the magnetization of PM1 is aligned antiparallel to the magnetizations of SWL and PM2.

Abstract: A horizontal cavity, surface emitting laser (HCSEL) with internal polarization rotation is used in thermally assisted recording in hard disk drives. The desired polarization of the laser is accomplished with two beam reflections off of facets within the diode. The facets are formed in a single ion beam etching step. This device can be used in a thermally assisted recording head to produce polarization incident on the disk aligned with the direction of the tracks on the disk.

Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.

Abstract: One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.

Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.

Abstract: A process for forming a plurality of sliders for use in thermally-assisted recording (TAR) disk drives includes a wafer-level process for forming a plurality of aperture structures, and optionally abutting optical channels, on a wafer surface prior to cutting the wafer into individual sliders. The wafer has a generally planar surface arranged into a plurality of rectangularly-shaped regions. In each rectangular region a first metal layer is deposited on the wafer surface, followed by a layer of radiation-transmissive aperture material, which is then lithographically patterned to define the width of the aperture, the aperture width being parallel to the length of the rectangularly-shaped region. A second metal layer is deposited over the patterned layer of aperture material. The resulting structure is then lithographically patterned to define an aperture structure comprising aperture material surrounded by metal and having parallel radiation entrance and exit faces orthogonal to the wafer surface.

Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.