Abstract: An apparatus for protecting a torso. The apparatus includes a generally planar rigid body having a first end and a second end, pads affixed near the first end and second end of the rigid body that face the torso, and a harness attached to the body that holds the protector in a desired location near the torso. The body forms a bridge between the pads to protect a portion of the torso from an impact.

Abstract: A defining aperture plate having at least two differently sized apertures is used in conjunction with at least two charge collectors. Because of the difference in aperture width, the two charge collectors receive different amounts of ions, where the amount is proportional to the associated aperture width. By monitoring the ratio of the charge collected by the first charge collector to the charge collected by the second collector, the amount of erosion can be monitored and optionally compensated for.

Abstract: A defining aperture plate having at least two differently sized apertures is used in conjunction with at least two charge collectors. Because of the difference in aperture width, the two charge collectors receive different amounts of ions, where the amount is proportional to the associated aperture width. By monitoring the ratio of the charge collected by the first charge collector to the charge collected by the second collector, the amount of erosion can be monitored and optionally compensated for.

Abstract: An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer.