Patents by Inventor David Tio Castro
David Tio Castro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10197520Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.Type: GrantFiled: July 24, 2012Date of Patent: February 5, 2019Assignee: ams International AGInventors: Matthias Merz, Aurelie Humbert, Roel Daamen, David Tio Castro
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Patent number: 9244031Abstract: A gas sensor on a semiconductor substrate. The gas sensor includes an elongate sensor element extending across an opening and has first and second opposed surfaces exposed for contact with a gas to be sensed. The first surface faces away from a major surface of the substrate. The second surface faces toward said major surface. The electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable. The gas sensor further includes a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening.Type: GrantFiled: July 24, 2012Date of Patent: January 26, 2016Assignee: NXP, B.V.Inventors: Aurelie Humbert, David Tio Castro
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Patent number: 9190611Abstract: An electronic device (100), the electronic device (100) comprising a substrate (101), a convertible structure (102) arranged on and/or in the substrate (101), being convertible between at least two states by heating and having different electrical properties in different ones of the at least two states, wherein the convertible structure (102) has a first portion having a first width (w1), and has a second portion having a second width (w2), the second width (w2) being smaller than the first width (w1), and a protrusion (108) protruding through the convertible structure (102) to thereby narrow the second portion of the convertible structure (102) from the first width (w1) to the second width (w2).Type: GrantFiled: June 20, 2008Date of Patent: November 17, 2015Assignee: NXP B.V.Inventors: David Tio Castro, Almudena Huerta
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Patent number: 9052267Abstract: Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor (50) at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer (46?) in between a first electrode (42) and a second electrode (44), the gas sensitive layer further comprising a portion (46?) over the first area. A method of manufacturing such an IC is also disclosed.Type: GrantFiled: October 14, 2014Date of Patent: June 9, 2015Assignee: NXP, B.V.Inventors: Youri Victorovitch Ponomarev, David Tio Castro, Roel Daamen
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Publication number: 20150031158Abstract: Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor (50) at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer (46?) in between a first electrode (42) and a second electrode (44), the gas sensitive layer further comprising a portion (46?) over the first area. A method of manufacturing such an IC is also disclosed.Type: ApplicationFiled: October 14, 2014Publication date: January 29, 2015Inventors: Youri Victorovitch Ponomarev, David Tio Castro, Roel Daamen
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Patent number: 8912478Abstract: The light dose received by perishable goods is an important parameter in determining the lifetime of those goods. A light sensor is described having a photosensitive element which changes its material property according to the light dose received. This change can be detected electrically by electrodes in the light sensor. Because the change in material property is permanent, this removes the need for a memory to store a value representing the light dose received by the light sensor.Type: GrantFiled: June 9, 2011Date of Patent: December 16, 2014Assignee: NXP, B.V.Inventors: David Tio Castro, Aurelie Humbert
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Patent number: 8896073Abstract: Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed.Type: GrantFiled: January 21, 2013Date of Patent: November 25, 2014Assignee: NXP B.V.Inventors: Youri Victorovitch Ponomarev, David Tio Castro, Roel Daamen
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Patent number: 8847339Abstract: Disclosed is an integrated circuit comprising a substrate (10) including semiconductor devices and a metallization stack (20) over said substrate for interconnecting said devices, the metallization stack comprising a cavity (36), and a thermal conductivity sensor comprising at least one conductive portion (16, 18) of said metallization stack suspended in said cavity. A method of manufacturing such an IC is also disclosed.Type: GrantFiled: January 28, 2013Date of Patent: September 30, 2014Assignee: NXP B.V.Inventors: Matthias Merz, Aurelie Humbert, David Tio Castro
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Publication number: 20130042669Abstract: A gas sensor on a semiconductor substrate. The gas sensor includes an elongate sensor element extending across an opening and has first and second opposed surfaces exposed for contact with a gas to be sensed. The first surface faces away from a major surface of the substrate. The second surface faces toward said major surface. The electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable. The gas sensor further includes a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening.Type: ApplicationFiled: July 24, 2012Publication date: February 21, 2013Applicant: NXP B.V.Inventors: Aurelie Humbert, David Tio Castro
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Patent number: 8379438Abstract: An electronic device comprising a heat transfer structure and a phase change structure which is convertible between two phase states by heating, wherein the phase change structure is electrically conductive in at least one of the two phase states, wherein the heat transfer structure is arranged to be heated by radiation impinging on the heat transfer structure, wherein the phase change structure is thermally coupled to the heat transfer structure so that the phase change structure is convertible between the two phase states when the radiation impinges on the heat transfer structure.Type: GrantFiled: March 19, 2008Date of Patent: February 19, 2013Assignee: NXP B.V.Inventors: David Tio Castro, Karen Attenborough
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Publication number: 20130032903Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.Type: ApplicationFiled: July 24, 2012Publication date: February 7, 2013Applicant: NXP B.V.Inventors: Matthias Merz, Aurelie Humbert, Roel Daamen, David Tio Castro
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Patent number: 8368044Abstract: An electronic device (100), comprises a first electrode (101), a second electrode (102) and a convertible structure (103) connected between the first electrode (101) and the second electrode (102), which convertible structure (103) is convertible between at least two states by heating, wherein the convertible structure (103) has different electrical properties in different ones of the at least two states, wherein the convertible structure (103) is curved in a manner to increase a length of a path of an electric current propagating through the convertible structure (103) between the first electrode (101) and the second electrode (102).Type: GrantFiled: April 17, 2008Date of Patent: February 5, 2013Assignee: NXP B.V.Inventors: David Tio Castro, Romain Delhougne
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Publication number: 20110303829Abstract: The light dose received by perishable goods is an important parameter in determining the lifetime of those goods. A light sensor (30) is described having a photosensitive element (18) which changes its material property according to the light dose received. This change can be detected electrically by electrodes (12, 14) in the light sensor. Because the change in material property is permanent, this removes the need for a memory to store a value representing the light dose received by the light sensor.Type: ApplicationFiled: June 9, 2011Publication date: December 15, 2011Applicant: NXP B.V.Inventors: David Tio Castro, Aurelie Humbert
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Publication number: 20110012082Abstract: An electronic component (100, 1400) comprises a first electrode (106), a second electrode (107), a convertible structure (102) electrically coupled between the first electrode (106) and the second electrode (107), being convertible between at least two states by heating and having different electrical properties in different ones of the at least two states, and a retention enhancement structure (108, 1402) arranged between the first electrode (106) and the second electrode (107), connected to the convertible structure (102) and configured for suppressing conversion between different ones of the at least two states in the absence of heating.Type: ApplicationFiled: March 18, 2009Publication date: January 20, 2011Applicant: NXP B.V.Inventor: David Tio Castro
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Publication number: 20100295010Abstract: An electronic device (100), comprises a first electrode (101), a second electrode (102) and a convertible structure (103) connected between the first electrode (101) and the second electrode (102), which convertible structure (103) is convertible between at least two states by heating, wherein the convertible structure (103) has different electrical properties in different ones of the at least two states, wherein the convertible structure (103) is curved in a manner to increase a length of a path of an electric current propagating through the convertible structure (103) between the first electrode (101) and the second electrode (102).Type: ApplicationFiled: April 17, 2008Publication date: November 25, 2010Applicant: NXP, B.V.Inventors: David Tio Castro, Romain Delhougne
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Publication number: 20100238720Abstract: An electronic device (100) comprising a heat transfer structure (103) and a phase change structure (104) which is convertible between two phase states by heating, wherein the phase change structure (104) is electrically conductive in at least one of the two phase states, wherein the heat transfer structure (103) is arranged to be heated by radiation (106) impinging on the heat transfer structure (103), wherein the phase change structure (104) is thermally coupled to the heat transfer structure (103) so that the phase change structure (104) is convertible between the two phase states when the radiation (106) impinges on the heat transfer structure (103).Type: ApplicationFiled: March 19, 2008Publication date: September 23, 2010Applicant: NXP B.VInventors: David Tio Castro, Karen Attenborough
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Publication number: 20100176364Abstract: An electronic device (100), the electronic device (100) comprising a substrate (101), a convertible structure (102) arranged on and/or in the substrate (101), being convertible between at least two states by heating and having different electrical properties in different ones of the at least two states, wherein the convertible structure (102) has a first portion having a first width (w1), and has a second portion having a second width (w2), the second width (w2) being smaller than the first width (w1), and a protrusion (108) protruding through the convertible structure (102) to thereby narrow the second portion of the convertible structure (102) from the first width (w1) to the second width (w2).Type: ApplicationFiled: June 20, 2008Publication date: July 15, 2010Applicant: NXP B.V.Inventors: David Tio Castro, Almudena Huerta