Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a composition that includes a scaffold having an internal space and a mixture positioned within the space, where the mixture includes a first phase having a metal halide perovskite and a second phase including at least one of a perovskite precursor and/or a switching molecule, the composition is capable of reversibly switching between a first state having at least one of a first transparency and/or a first color and a second state having at least one of a second transparency and/or a second color.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a composition that includes a perovskite crystal, where the perovskite crystal is in the form of a powder, and the perovskite crystal is semiconducting and photovoltaically active.

Abstract: The present disclosure relates to a perovskite that includes ABX3, where A is an organic cation, B is a second cation, X is an anion, and the perovskite has a film density (?) of less than 4.37 g/cm3. In some embodiments of the present disclosure, the film density may be in the range, 4.1 g/cm3???4.37 g/cm3. In some embodiments of the present disclosure, the organic cation may include at least one of dimethylammonium (DMA), guanidinium (GA), and/or acetamidinium (Ac). In some embodiments of the present disclosure, A may further include cesium.

Abstract: The present disclosure relates to a composition that includes a scaffold having an internal space and a mixture positioned within the space, where the mixture includes a first phase having a metal halide perovskite and a second phase including at least one of a perovskite precursor and/or a switching molecule, the composition is capable of reversibly switching between a first state having at least one of a first transparency and/or a first color and a second state having at least one of a second transparency and/or a second color.

Abstract: The present disclosure relates to a composition that includes a perovskite crystal having a ferroelectric domain aligned substantially parallel to a reference axis. In some embodiments of the present disclosure, the perovskite crystal may include ABX3, where A is a first cation, B is a second cation, and X is an anion. In some embodiments of the present disclosure, A may include an alkyl ammonium cation. In some embodiments of the present disclosure, B may include a metal element. In some embodiments of the present disclosure, the metal element may include lead. In some embodiments of the present disclosure, X may include a halogen. In some embodiments of the present disclosure, the perovskite crystal may include methylammonium lead iodide.

Abstract: The present disclosure relates to a composition that includes a perovskite crystal, where the perovskite crystal is in the form of a powder, and the perovskite crystal is semiconducting and photovoltaically active.

Abstract: The present disclosure relates to a perovskite that includes ABX3, where A is an organic cation, B is a second cation, X is an anion, and the perovskite has a film density (?) of less than 4.37 g/cm3. In some embodiments of the present disclosure, the film density may be in the range, 4.1 g/cm3???4.37 g/cm3. In some embodiments of the present disclosure, the organic cation may include at least one of dimethylammonium (DMA), guanidinium (GA), and/or acetamidinium (Ac). In some embodiments of the present disclosure, A may further include cesium.

Abstract: The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Abstract: The present disclosure relates to a composition that includes a perovskite crystal having a ferroelectric domain aligned substantially parallel to a reference axis. In some embodiments of the present disclosure, the perovskite crystal may include ABX3, where A is a first cation, B is a second cation, and X is an anion. In some embodiments of the present disclosure, A may include an alkyl ammonium cation. In some embodiments of the present disclosure, B may include a metal element. In some embodiments of the present disclosure, the metal element may include lead. In some embodiments of the present disclosure, X may include a halogen. In some embodiments of the present disclosure, the perovskite crystal may include methylammonium lead iodide.