Abstract: According to one embodiment of the present invention a memory subsystem comprises a column and a column select signal line. The column comprises at least one bit line and a write precharge circuit. The write precharge circuit is operable to provide at least a portion of a charge on the at least one bit line. The column select signal line is operable to provide a column select signal selecting the column for a write operation. The write precharge circuit is gated with the column select signal line such that the column select signal is communicated to the write precharge circuit upon selection of the column for the write operation. The write precharge circuit is operable to at least partially restore the charge on the at least one bit line upon receipt of the column select signal after the write operation.

Abstract: In accordance with one embodiment of the present invention, a memory array includes a plurality of memory cells, the memory cells each comprising one or more gates, and a word line for controlling the gates of the plurality of memory cells. A driver is coupled to the word line at a first location. The driver is operable to drive the gates of the memory cells. A load device is coupled to the word line at a second location remote from the first location. The load device is operable to pull a set of gates electrically isolated from the driver to a substantially non-floating state.

Abstract: In accordance with one embodiment of the present invention, a memory array includes a plurality of memory cells, the memory cells each comprising one or more gates, and a word line for controlling the gates of the plurality of memory cells. A driver is coupled to the word line at a first location. The driver is operable to drive the gates of the memory cells. A load device is coupled to the word line at a second location remote from the first location. The load device is operable to pull a set of gates electrically isolated from the driver to a substantially non-floating state.