Abstract: Integrated circuit (IC) devices having gate-all-around (GAA) transistors. An IC device may include adjacent GAA transistors with gate electrodes having different gate dielectric stacks separated by a dielectric wall. The gate dielectric stacks may include inner gate dielectric layers on nanoribbon channels and outer gate dielectric layers on the inner gate dielectric layers. The inner gate dielectric layers of the adjacent transistors may have different thicknesses or material compositions. The outer gate dielectric layers of the adjacent transistors may have different thicknesses or material compositions. The dielectric wall between gate electrodes and gate dielectric stacks may enable independent processing of the transistors gates by dividing the nanoribbon channels into separate gate tubs.

Abstract: Integrated circuit (IC) devices having shared, dual-metal gates for complementary transistors. An IC device includes a shared gate structure over first and second stacks of nanoribbons with complementary conductivities and a substrate, and the gate structure includes first, second, and third gate metals with the first gate metal over and around the nanoribbons in the first stack, the second gate metal over and around the nanoribbons in the second stack, and the third gate metal around and between the nanoribbons in the first stack, between the first and second stacks, in contact with both the first and second gate metals, and extending beyond the first metal over the substrate. The first gate metal may act as a temple for selective deposition of the third gate metal. The second gate metal may be conformally deposited over the nanoribbons in the second stack and on the third gate metal.

Abstract: Integrated circuit (IC) devices having shared, dual-metal gates for complementary transistors. An IC device includes a shared gate structure over first and second stacks of nanoribbons with complementary conductivities and a substrate, and the gate structure includes first, second, and third gate metals with the first gate metal over and around the nanoribbons in the first stack, the second gate metal over and around the nanoribbons in the second stack, and the third gate metal around and between the nanoribbons in the first stack, between the first and second stacks, in contact with both the first and second gate metals, and extending beyond the first metal over the substrate. The first gate metal may act as a temple for selective deposition of the third gate metal. The second gate metal may be conformally deposited over the nanoribbons in the second stack and on the third gate metal.

Abstract: In some embodiments, the strength of the work function (WF) for P-type MOS transistors may be boosted by doping a gate layer surface using a plasma oxidation treatment after a metallic nitride (e.g., MoN film) has been deposited.

Abstract: A metal gate fabrication method for nanoribbon-based transistors and associated transistor arrangements, IC structures, and devices are disclosed. An example IC structure fabricated using metal gate fabrication method described herein may include a first stack of N-type nanoribbons, a second stack of P-type nanoribbons, a first gate region enclosing portions of the nanoribbons of the first stack and including an NWF material between adjacent nanoribbons of the first stack, and a second gate region enclosing portions of the nanoribbons of the second stack and including a PWF material between adjacent nanoribbons of the second stack, where the second gate region includes the PWF material at sidewalls of the nanoribbons of the second stack and further includes the NWF material so that the PWF material is between the sidewalls of the nanoribbons of the second stack and the NWF material.

Abstract: An anamorphic optical element and an adjustment mechanism for selectively rotating the optical element either around an axis substantially in a vertical direction, an axis substantially in an optical axis direction, an axis substantially in a plane formed by the vertical direction and the optical axis direction, or combination of axes thereof is used to vary a vertical separation between two or more spots.

Abstract: An anamorphic optical element and an adjustment mechanism for selectively rotating the optical element either around an axis substantially in a vertical direction, an axis substantially in an optical axis direction, an axis substantially in a plane formed by the vertical direction and the optical axis direction, or combination of axes thereof is used to vary a vertical separation between two or more spots.

Abstract: An anamorphic optical element and an adjustment mechanism for selectively rotating the optical element either around an axis substantially in a vertical direction, an axis substantially in an optical axis direction, an axis substantially in a plane formed by the vertical direction and the optical axis direction, or combination of axes thereof is used to vary a vertical separation between two or more spots.

Abstract: A method of, and apparatus for, reducing the visibility of banding artifacts on a printed medium comprising producing synthetic artifacts on the printed medium, overlapping scan lines at swath boundaries and controlling exposure along a scan line to reduce the visibility of the banding artifacts.

Abstract: A method of, and apparatus for, reducing the visibility of banding artifacts on a printed medium comprising producing synthetic artifacts on the printed medium, overlapping scan lines at swath boundaries and controlling exposure along a scan line to reduce the visibility of the banding artifacts.

Abstract: An anamorphic optical element and an adjustment mechanism for selectively rotating the optical element either around an axis substantially in a vertical direction, an axis substantially in an optical axis direction, an axis substantially in a plane formed by the vertical direction and the optical axis direction, or combination of axes thereof is used to vary a vertical separation between two or more spots.

Abstract: An optical disk structure and optical disk recorder which enables data to be re-written onto the recording layer of the optical disk. A clock reference structure is permanently formed along servo tracks of the optical disk. An optical transducer is coupled to the clock reference structure and generates a clock reference signal simultaneously with writing new data onto the recording layer of the optical disk. The data is written as data marks along the servo tracks. Each of the data marks includes edges. The edges of the data marks are recorded in synchronization with a write clock. The write clock is phase-locked with the clock reference signal. Therefore, the edges of the data marks are aligned with the clock reference structure with sub-bit accuracy. Standard DVD-ROM disk readers are not able to detect the high spatial frequency of the clock reference structure.

Abstract: Disclosed are various systems and methods for generating a data signal. In one embodiment, a system is provided that comprises a laser with a gain medium, the laser being configured to emit optical power. The laser is further configured to receive an external optical feedback optically coupled into the gain medium from an optical medium. The external optical feedback is modulated by data embodied in the optical medium. A circuit generates the data signal corresponding to the data based upon a variation in the optical output power of the laser due to the external optical feedback directed into the gain medium of the laser.

Abstract: Systems and methods are described for stitching multiple images together in a printer to form a single, seamless, composite image. The use of multiple laser sources and multiple scan lenses with one or more scanner assemblies and various image stitching methods achieves seamless image stitching in a manner that provides benefits over prior printers using single laser sources and single scan lenses. Such benefits include, for example, a wider image format, smaller optical spot size, reduced cost, and reduced overall size for the printer.

Abstract: Systems and methods are described that dynamically correct field curvature and other focus errors in imaging systems that use rotating scanners to scan an image field. The dynamic correction controls the focusing of an image field such that focus is maintained across the width of a photosensitive element as a rotating scanner scans the field. The described systems and methods enable the use of post-objective scanning configurations in which the complexity and expense of objective lenses is significantly reduced.