Abstract: An optical device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16) is grown on the first semiconductor layer (12) between the dielectric strips (14), resulting in alternating dielectric sections (14) and semiconductor sections. In an alternate embodiment, a dielectric layer is deposited on a first semiconductor layer (64), and is patterned and etched to define dielectric strips (66). The semiconductor layer (64) is etched to form openings (68) between the dielectric strips (66). Another semiconductor material (70) is grown within the openings (68) and then another semiconductor layer (72) is grown over the entire surface after removing the dielectric strips (66). Either embodiment may be modified to provide diffraction grating with air channels (20).

Abstract: A coupled quantum well Mach-Zehnder modulator that employs a push-pull structure to reduce the modulation voltage. The Mach-Zehnder modulator includes a first arm having a first PIN semiconductor device and a second arm having a second PIN semiconductor device. The intrinsic layers of the PIN devices include a coupled quantum well structure to provide an opposite index of refraction change for different DC bias voltages. An RF signal used to modulate the light beam is applied to the two arms in phase and causes the index of refraction in the intrinsic layers of the two PIN devices to change in opposite directions so that a push-pull type drive is achieved without requiring 180° out-of-phase RF drive signal.

Abstract: An optical device including a first semiconductor layer on which is deposited a dielectric layer that is patterned and etched to form dielectric strips that are part of a diffraction grating layer. A second semiconductor layer is grown on the first semiconductor layer between the dielectric strips to provide alternating dielectric sections and semiconductor sections. Via channels can be patterned and etched through the second semiconductor layer so that dielectric strips can be removed to form dielectric air channels.

Abstract: A coupled quantum well Mach-Zehnder modulator that employs a push-pull structure to reduce the modulation voltage. The Mach-Zehnder modulator includes a first arm having a first PIN semiconductor device and a second arm having a second PIN semiconductor device. The intrinsic layers of the PIN devices include a coupled quantum well structure to provide an opposite index of refraction change for different DC bias voltages. An RF signal used to modulate the light beam is applied to the two arms in phase and causes the index of refraction in the intrinsic layers of the two PIN devices to change in opposite directions so that a push-pull type drive is achieved without requiring 180° out-of-phase RF drive signal.

Abstract: An optical device including a first semiconductor layer on which is deposited a dielectric layer that is patterned and etched to form dielectric strips that are part of a diffraction grating layer. A second semiconductor layer is grown on the first semiconductor layer between the dielectric strips to provide alternating dielectric sections and semiconductor sections. Via channels can be patterned and etched through the second semiconductor layer so that dielectric strips can be removed to form dielectric air channels.

Abstract: An optical device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16) is grown on the first semiconductor layer (12) between the dielectric strips (14), resulting in alternating dielectric sections (14) and semiconductor sections. In an alternate embodiment, a dielectric layer is deposited on a first semiconductor layer (64), and is patterned and etched to define dielectric strips (66). The semiconductor layer (64) is etched to form openings (68) between the dielectric strips (66). Another semiconductor material (70) is grown within the openings (68) and then another semiconductor layer (72) is grown over the entire surface after removing the dielectric strips (66). Either embodiment may be modified to provide diffraction grating with air channels (20).

Abstract: An optical device (10) including a first semiconductor layer (12) on which is deposited a dielectric layer that is patterned and etched to form dielectric strips (14) as part of a diffraction grating layer. Another semiconductor layer (16) is grown on the first semiconductor layer (12) between the dielectric strips (14) to provide alternating dielectric sections (14) and semiconductor sections. In an alternate embodiment, a dielectric layer is deposited on a first semiconductor layer (64), and is patterned and etched to define dielectric strips (66). The semiconductor layer (64) etched to form openings (68) between the dielectric strips (66). A semiconductor material (70) is grown within the openings (68) and then another semiconductor layer (72) is grown over the entire surface after removing the dielectric strips. Either embodiment may be modified to provide a diffraction grating with air channels (20).

Abstract: An integrated optoelectronic device (1) includes a substrate (4), at least one optoelectronic component (2) provided on the substrate (4), and a waveguide (9a . . . 9n) provided on the substrate (4) and optically connected to the at least one optoelectronic component (2). The waveguide (9a . . . 9n) is made of a sol-gel glass. A method for making the integrated optoelectronic device (1) includes the steps of providing a substrate (4), providing at least one optoelectronic component (2) on the substrate (4), and providing at least one sol-gel glass waveguide (9a . . . 9n) on the substrate (4) and optically connected to the at least one optoelectronic component (2).

Abstract: An integrated optoelectronic device (1) includes a substrate(4), at least one optoelectronic component (2) provided on the substrate (4), and a waveguide (9a . . . 9n) provided on the substrate (4) and optically connected to the at least one optoelectronic component (2). The waveguide (9a . . . 9n) is made of a sol-gel glass. A method for making the integrated optoelectronic device (1) includes the steps of providing a substrate (4), providing at least one optoelectronic component (2) on the substrate (4), and providing at least one sol-gel glass waveguide (9a . . . 9n) on the substrate (4) and optically connected to the at least one optoelectronic component (2).