Patents by Inventor David V. Tsu

David V. Tsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230219272
    Abstract: An ETFE film that has a haze value of 2% or less, and preferably 1% or less, which advantageously may have a thickness greater than 150 pm, and preferably In the range of 200 pm to 300 pm, A film of ETFE, as received from the manufacturer, is stretched under special processing conditions to produce a processed (or final) film having an area stretch factor (Ax) greater than about 1.6. Ax —Initial film thickness/film thickness after stretching. However, it is important that the initial film thickness has a starting thickness of at least 400 pm, and preferably at least 500 pm. Processing conditions Include, in some embodiments, pre-beating and heating during stretching, and post-stretching annealing If the film is stretched in a 2.5×1 or a 4×1 ratio, at a processing temperature in THV range of 130° C. to 150° C., the haze of the resulting film can be reliably brought down to less than 2%. We have also found that this low haze value is not dependent on whether the larger stretch {e.g.
    Type: Application
    Filed: July 27, 2022
    Publication date: July 13, 2023
    Applicant: The Mackinac Technology Company
    Inventors: Attila Molnar, Anja Techel, David V. Tsu, John Thomas Slagter
  • Patent number: 10435567
    Abstract: Fluorinated and hydrogenated diamond-like carbon (“DLC-FH”) that have unique optical properties differ as a class from the existing DLC art, whose refractive indices [?]are limited to rather high values above a lower threshold of 1.7, and can range up to about 2.7. The DLC-FH materials can achieve very low refractive indices at 550 nm wavelength, [?550], i.e., below 1.5, and especially demonstrated down to 1.3. Moreover, whereas the absorption for the existing DLC art, as quantified by the extinction coefficient [?] at a wavelength of 550 nm, [?550] is limited to about 0.04, our DLC-FH material can achieve [?550] below 0.01. Both of these attributes, i.e., low [?550] and low [?550] means that, for the first time, a carbon-based material as represented by the DLC-FH material, can be used for anti-reflection (AR) coating, wherein there are no longer any restrictions in how they can be used to promote low reflectance (with low fit[?]) and high transmittance (with low [?]).
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: October 8, 2019
    Inventors: John Thomas Slagter, David V. Tsu, Lars Haubold, Thomas Schuelke
  • Publication number: 20170166753
    Abstract: Fluorinated and hydrogenated diamond-like carbon (“DLC-FH”) that have unique optical properties differ as a class from the existing DLC art, whose refractive indices [n] are limited to rather high values above a lower threshold of 1.7, and can range up to about 2.7. The DLC-FH materials can achieve very low refractive indices at 550 nm wavelength. [n550], i.e., below 1.5, and especially demonstrated down to 1.3. Moreover, whereas the absorption for the existing DLC art, as quantified by the extinction coefficient [k] at a wavelength of 550 nm, [k550], is limited to about 0.04, our DLC-FH material can achieve [k550] below 0.01. Both of these attributes, i.e., low [n550] and low [k550) means that, for the first time, a carbon-based material as represented by the DLC-FH material, can be used for anti-reflection (AR) coating.
    Type: Application
    Filed: February 12, 2015
    Publication date: June 15, 2017
    Inventors: John Thomas Slagter, David V. Tsu, Lars (nmn) Haubold, Thomas (nmn) Schuelke
  • Publication number: 20140042355
    Abstract: A synthetic insulation material that rivals and surpasses down in performance without suffering degradation in insulating power over time. The material is an aggregate of particulate units that have a fractal-like geometric configuration. The geometric configuration includes non-integer dimensionality that promotes physical entanglements of the particulate units. The physical entanglements impart a high frictional resistance to slippage of the particulate units to maintain loft over time by inhibiting the settling of particulate units upon compression. The geometric configuration further includes aspects of self-similarity. The particulate units are formed from a material that efficiently scatters thermal radiation.
    Type: Application
    Filed: August 13, 2012
    Publication date: February 13, 2014
    Inventors: David V. Tsu, Robert J. Kopf, David Jablonski, Scott F. Jenney
  • Publication number: 20100064614
    Abstract: Commercial metalized plastic film, in the form of discarded containers or container stock, is collected, cleaned, shredded and packaged, to produce an insulating layer having a high thermal resistance, or R-value, no outgassing of volatile compounds at habitable temperatures, and multiple reusability after deployment. Each step in the sequence is designed to minimize unit cost of the process, as well as maximize the thermal resistance of the finished product. The invention largely avoids disintegration of the recycled material, and hence utilizes the embedded energy already present in the construction of the original film.
    Type: Application
    Filed: September 15, 2009
    Publication date: March 18, 2010
    Inventors: David V. Tsu, Leticia C. Tsu, Robert J. Kopf, David C. Jablonski, Robert O. Miller
  • Publication number: 20080311392
    Abstract: A composite thermal barrier material. The material includes a support layer coated on one or both sides with an infrared active material to improve thermal retention characteristics. The support layer is typically a flexible organic or polymer material. The infrared active material increases reflectance of thermal infrared radiation and reduces the flow of heat from the interior side of the barrier to the external surroundings. The infrared active material operates through vibrational absorption in the infrared and/or free carrier absorption. Representative infrared active materials include oxides, transparent conductors, and nanoscale metals.
    Type: Application
    Filed: June 11, 2008
    Publication date: December 18, 2008
    Inventor: David V. Tsu
  • Patent number: 6723421
    Abstract: A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: April 20, 2004
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Boil Pashmakov, David V. Tsu
  • Publication number: 20030096098
    Abstract: A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.
    Type: Application
    Filed: October 5, 2001
    Publication date: May 22, 2003
    Inventors: Stanford R. Ovshinsky, Boil Pashmakov, David V. Tsu
  • Publication number: 20020114256
    Abstract: Methods of writing information to an optical memory device. The methods comprise the step of writing a mark to the active material of the optical memory device by irradiating the material with an applied energy source. In one embodiment, the applied energy source provides a plurality of energy pulses. In another embodiment, energy in excess of that required to form a mark is released and dissipated in a manner that minimizes mark enlargement, spurious mark formation, recrystallization and back crystallization. The methods are effective to provide better cooling characteristics through enhancement of the capacitive cooling contribution.
    Type: Application
    Filed: December 21, 2001
    Publication date: August 22, 2002
    Inventor: David V. Tsu
  • Patent number: 5567241
    Abstract: A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atmospheric pressure region. The improved feed-through is designed to match the impedance of the microwave wave guide in the atmospheric pressure region and the improved linear microwave applicator. A second aspect of the present invention is an improved linear microwave applicator for uniformly coupling 95% or more of the microwave energy input thereto into an elongated plasma zone. The applicator includes curved microwave reflector panels which are used to tune the uniformity of the radiated microwave energy along the length of the linear applicator. A third aspect of the present invention is a microwave enhanced chemical vapor deposition method for depositing thin film material.
    Type: Grant
    Filed: May 16, 1995
    Date of Patent: October 22, 1996
    Assignee: Energy Conversion Devices, Inc.
    Inventors: David V. Tsu, Rosa Young, Stanford R. Ovshinsky
  • Patent number: 5324553
    Abstract: An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.
    Type: Grant
    Filed: July 9, 1993
    Date of Patent: June 28, 1994
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, David V. Tsu, Rosa Young