Patents by Inventor David Van Steenwinckel

David Van Steenwinckel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11525793
    Abstract: In an embodiment a method includes determining, for each capacitor element of a plurality of capacitor elements of a capacitor, an increase of a capacitance of a capacitor element caused by a decrease of a temperature of the capacitor and deriving a dew point from a temperature at which the increases of the capacitances or values corresponding to the increases of the capacitances exceed a predefined limit by generating a set of binary digits, each of the binary digits corresponding to one of the capacitor elements and indicating whether the capacitance of the capacitor element is within a predefined range, comparing sets of binary digits generated at different temperatures and determining a number of capacitor elements for which the corresponding binary digits of the sets are different and repeating the comparison for a sequence of sets generated at decreasing temperatures.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: December 13, 2022
    Assignee: SCIOSENSE B.V.
    Inventors: Dimitri Soccol, Viet Nguyen Hoang, David Van Steenwinckel, Roel Daamen, Pascal Bancken
  • Publication number: 20210223193
    Abstract: In an embodiment a method includes determining, for each capacitor element of a plurality of capacitor elements of a capacitor, an increase of a capacitance of a capacitor element caused by a decrease of a temperature of the capacitor and deriving a dew point from a temperature at which the increases of the capacitances or values corresponding to the increases of the capacitances exceed a predefined limit by generating a set of binary digits, each of the binary digits corresponding to one of the capacitor elements and indicating whether the capacitance of the capacitor element is within a predefined range, comparing sets of binary digits generated at different temperatures and determining a number of capacitor elements for which the corresponding binary digits of the sets are different and repeating the comparison for a sequence of sets generated at decreasing temperatures.
    Type: Application
    Filed: April 8, 2021
    Publication date: July 22, 2021
    Inventors: Dimitri Soccol, Viet Nguyen Hoang, David Van Steenwinckel, Roel Daamen, Pascal Bancken
  • Patent number: 11002696
    Abstract: In an embodiment a dew point sensor device includes a semiconductor substrate, a top layer arranged on the semiconductor substrate, a Peltier element integrated in the semiconductor substrate, a temperature sensor, a capacitor arranged at a surface of the top layer facing away from the semiconductor substrate, the temperature sensor and the capacitor being arranged so that a temperature of the capacitor is measurable by the temperature sensor, wherein the capacitor includes a plurality of capacitor elements each having a capacitance, and an electronic circuit configured for an individual determination of the capacitances and a generation of a set of binary digits, each of the binary digits corresponding to one of the capacitor elements and indicating whether the capacitance of the capacitor element is within a predefined range.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: May 11, 2021
    Assignee: SCIOSENSE B.V.
    Inventors: Dimitri Soccol, Viet Nguyen Hoang, David Van Steenwinckel, Roel Daamen, Pascal Bancken
  • Publication number: 20190094164
    Abstract: The dew point sensor device comprises a semiconductor substrate (1), a Peltier element (2), which may be integrated in the substrate (1), a temperature sensor (3), a capacitor (4) at an exposed surface (9) above the substrate (1) and in the vicinity of the temperature sensor (3), and an electronic circuit (5), which may also be integrated in the substrate (1). The capacitor (4) comprises a plurality of capacitor elements (40) each having a capacitance, and the electronic circuit (5) is provided for an individual determination of the capacitances. The dew point is determined by a measurement of the variation of the capacitances at decreasing temperatures and a measurement of the relevant temperature.
    Type: Application
    Filed: February 21, 2017
    Publication date: March 28, 2019
    Inventors: Dimitri SOCCOL, Viet NGUYEN HOANG, David VAN STEENWINCKEL, Roel DAAMEN, Pascal BANCKEN
  • Patent number: 10041940
    Abstract: A method for providing an integrated circuit such that first and second sensing electrodes respectively have at their surfaces first and second receptor molecules for selectively binding to first and second analytes of interest; exposing the integrated circuit to a sample potentially comprising at least one of the first and second analytes, providing a first bead having a first electrical signature attached to a first molecule having a conformation/affinity for binding to the first sensing electrode dependent on the presence of the first analyte; providing a second bead having a second electrical signature attached to a second molecule having a conformation/affinity for binding to the second sensing electrode dependent on the presence of the second analyte; and determining the presence of the electrical signature of the first and/or second bead(s) on the first and second sensing electrodes respectively. An IC for implementing this method.
    Type: Grant
    Filed: August 9, 2012
    Date of Patent: August 7, 2018
    Assignee: NXP B.V.
    Inventors: Filip Frederix, Friso Jacobus Jedema, David Van Steenwinckel, Hilco Suy
  • Patent number: 9534250
    Abstract: The present invention relates to a sensing device with a surface having at least one individual sensing region, wherein each sensing region includes a plurality of binding elements anchored on the surface for binding different specific analytes of interest, at least one of the analyte of interest and its matching binding element having a label for detecting said binding. The present invention further relates to a method of manufacturing such a sensing device.
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: January 3, 2017
    Assignee: NXP B.V.
    Inventors: David Van Steenwinckel, Filip Frederix
  • Patent number: 9386655
    Abstract: A light sensor device comprises a substrate (10) having a well (12) defined in one surface. At least one light sensor (14) is formed at the base of the well (12), and an optical light guide (18) in the form of a transparent tunnel (18) within an opaque body (20) extends from a top surface of the device down a sloped side wall of the well (12) to the location of the light sensor (14).
    Type: Grant
    Filed: May 21, 2009
    Date of Patent: July 5, 2016
    Assignee: NXP B.V.
    Inventors: Viet Nguyen Hoang, Radu Surdeanu, Pascal Bancken, Benoit Bataillou, David Van Steenwinckel
  • Patent number: 9140678
    Abstract: An integrated circuit arrangement (100) is disclosed comprising a substrate (210); and a gas such as a CO2 sensor comprising spatially separated electrodes including at least an excitation electrode (132) and a sensing electrode (142); a volume (120) in contact with said pair of electrodes, said volume including a chemical compound for forming a reaction product with said gas in an acid-base reaction; a signal generator (212) conductively coupled to the excitation electrode and adapted to provide the excitation electrode with a microwave signal; and a signal detector (214) conductively coupled to the sensing electrode and adapted to detect a change in said microwave signal caused by a permittivity change in said volume, said permittivity change being caused by said reaction product. A device comprising such an IC arrangement and a method of sensing the presence of a gas using such an IC arrangement are also disclosed.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: September 22, 2015
    Assignee: NXP, B.V.
    Inventors: Dimitri Soccol, Youri Victorovitch Ponomarev, David van Steenwinckel
  • Patent number: 9081251
    Abstract: A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: July 14, 2015
    Assignee: NXP B.V.
    Inventors: Benoit Bataillou, Radu Surdeanu, Pascal Bancken, David van Steenwinckel, Viet Nguyen Hoang
  • Patent number: 8994194
    Abstract: A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: March 31, 2015
    Assignee: NXP, B.V.
    Inventors: David van Steenwinckel, Thomas Merelle, Franciscus Petrus Widdershoven, Viet Hoang Nguyen, Dimitri Soccol, Jan Leo Dominique Fransaer
  • Patent number: 8896317
    Abstract: A method of determining the dominant output wavelength of an LED, includes determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analyzing the characteristic to determine the dominant output wavelength.
    Type: Grant
    Filed: February 9, 2009
    Date of Patent: November 25, 2014
    Assignee: NXP B.V.
    Inventors: Radu Surdeanu, Viet Nguyen Hoang, Benoit Bataillou, Pascal Bancken, David Van Steenwinckel
  • Publication number: 20140170762
    Abstract: An integrated circuit arrangement (100) is disclosed comprising a substrate (210); and a gas such as a CO2 sensor comprising spatially separated electrodes including at least an excitation electrode (132) and a sensing electrode (142); a volume (120) in contact with said pair of electrodes, said volume including a chemical compound for forming a reaction product with said gas in an acid-base reaction; a signal generator (212) conductively coupled to the excitation electrode and adapted to provide the excitation electrode with a microwave signal; and a signal detector (214) conductively coupled to the sensing electrode and adapted to detect a change in said microwave signal caused by a permittivity change in said volume, said permittivity change being caused by said reaction product. A device comprising such an IC arrangement and a method of sensing the presence of a gas using such an IC arrangement are also disclosed.
    Type: Application
    Filed: December 4, 2013
    Publication date: June 19, 2014
    Applicant: NXP B.V.
    Inventors: Dimitri Soccol, Youri Victorovitch Ponomarev, David van Steenwinckel
  • Publication number: 20140159173
    Abstract: A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.
    Type: Application
    Filed: February 4, 2014
    Publication date: June 12, 2014
    Applicant: NXP B.V.
    Inventors: David van Steenwinckel, Thomas Merelle, Franciscus Petrus Widdershoven, Viet Hoang Nguyen, Dimitri Soccoi, Jan Leo Dominique Fransaer
  • Patent number: 8679966
    Abstract: A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: March 25, 2014
    Assignee: NXP, B.V.
    Inventors: David Van Steenwinckel, Thomas Merelle, Franciscus Petrus Widdershoven, Viet Hoang Nguyen, Dimitri Soccoi, Jan Leo Dominique Fransaer
  • Patent number: 8534914
    Abstract: A method of estimating the junction temperature of a light emitting diode comprises driving a forward bias current through the diode, the current comprising a square wave which toggles between high and low current values (Ihigh, llow), the high current value (lhigh) comprising an LED operation current, and the low current value (ILOW) comprising a non-zero measurement current. The forward bias voltage drop (Vf) is sampled and the forward bias voltage drop (Vflow) is determined at the measurement current (ILOW)—The temperature is derived from the determined forward bias voltage drop.
    Type: Grant
    Filed: January 27, 2009
    Date of Patent: September 17, 2013
    Assignee: NXP B.V.
    Inventors: Viet Nguyen Hoang, Radu Surdeanu, Pascal Bancken, Benoit Bataillou, David Van Steenwinckel
  • Publication number: 20130207206
    Abstract: A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.
    Type: Application
    Filed: August 7, 2012
    Publication date: August 15, 2013
    Applicant: NXP B.V.
    Inventors: David VAN STEENWINCKEL, Thomas MERELLE, Franciscus Petrus WIDDERSHOVEN, Viet Hoang NGUYEN, Dimitri SOCCOl, Jan Leo Dominique FRANSAER
  • Publication number: 20130053268
    Abstract: A method for providing an integrated circuit such that first and second sensing electrodes respectively have at their surfaces first and second receptor molecules for selectively binding to first and second analytes of interest; exposing the integrated circuit to a sample potentially comprising at least one of the first and second analytes, providing a first bead having a first electrical signature attached to a first molecule having a conformation/affinity for binding to the first sensing electrode dependent on the presence of the first analyte; providing a second bead having a second electrical signature attached to a second molecule having a conformation/affinity for binding to the second sensing electrode dependent on the presence of the second analyte; and determining the presence of the electrical signature of the first and/or second bead(s) on the first and second sensing electrodes respectively. An IC for implementing this method.
    Type: Application
    Filed: August 9, 2012
    Publication date: February 28, 2013
    Applicant: NXP B.V.
    Inventors: Filip FREDERIX, Friso Jacobus JEDEMA, David VAN STEENWINCKEL, Hilco SUY
  • Patent number: 8368877
    Abstract: An apparatus comprising at least one measuring cell (10) is disclosed. The measuring cell comprises a first cavity (16 and a second cavity (18) perpendicular to the first cavity, the first cavity and the second cavity comprising an overlap at first respective ends and a reflective surface (20) at the opposite respective ends. A beam splitter (15) is located in the overlap and an electromagnetic radiation source (12) is arranged to project a beam of electromagnetic radiation onto the beam splitter (15) such that the beam is projected into each of the cavities. A phase detector (22) for detecting a phase difference between the respective electromagnetic radiation reflected by the first and second cavity (16; 18) is also provided. In addition, the apparatus has a fluid channel (26), at least a part of which runs parallel to the first cavity (16) such that the electromagnetic radiation projected into the first cavity extends into said part of the fluid channel.
    Type: Grant
    Filed: July 1, 2009
    Date of Patent: February 5, 2013
    Assignee: NXP B.V.
    Inventors: Benoit Bataillou, Pascal Bancken, David van Steenwinckel, Viet Nguyen Hoang, Radu Surdeanu
  • Patent number: 8348505
    Abstract: The present invention relates to a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element, wherein respective forward voltages at junctions of the semiconductor element and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensor, and the junction temperature of the semiconductor element is predicted based on the absolute ambient temperature and the measured forward voltages.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: January 8, 2013
    Assignee: NXP B.V.
    Inventors: Viet Nguyen Hoang, Pascal Bancken, Radu Surdeanu, Benoit Bataillou, David van Steenwinckel
  • Patent number: 8257912
    Abstract: The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist on the substrate, performing a first exposure in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation. The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.
    Type: Grant
    Filed: July 31, 2007
    Date of Patent: September 4, 2012
    Assignee: NXP B.V.
    Inventors: Hans Kwinten, Peter Zandbergen, David Van Steenwinckel, Anja Vanleenhove