Patents by Inventor David Verstraeten

David Verstraeten has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11791435
    Abstract: Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.
    Type: Grant
    Filed: December 27, 2022
    Date of Patent: October 17, 2023
    Assignee: Maxeon Solar Pte. Ltd.
    Inventors: Moon Chun, Christoph Sachs, David Verstraeten
  • Patent number: 11784276
    Abstract: Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: October 10, 2023
    Assignees: SunPower Corporation, Total Solar International
    Inventors: Moon Chun, Christoph Sachs, David Verstraeten
  • Publication number: 20230136895
    Abstract: Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.
    Type: Application
    Filed: December 27, 2022
    Publication date: May 4, 2023
    Inventors: Moon Chun, Christoph SACHS, David VERSTRAETEN
  • Publication number: 20210104643
    Abstract: Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.
    Type: Application
    Filed: January 8, 2018
    Publication date: April 8, 2021
    Inventors: Moon Chun, Christoph Sachs, David Verstraeten