Abstract: The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

Abstract: A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

Abstract: The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

Abstract: The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

Abstract: A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

Abstract: A wafer boat and boat handle are designed for automatic interlocking engagement and release upon manipulation by a user. The boat includes a side rail with a lip for engagement within a slot formed in the handle, and a handle cam activating contact surface for contacting a gripping block member of the handle. The handle includes at least one boat holding block with a boat lip holding slot therewithin. The handle also includes at least one boat gripping block that is rotatably engaged with the holding block, and which includes a frontwardly projecting rail gripping flange. When the boat lip is brought into the holding block slot, the gripping block rotates and the flange is brought over the top of the rail. The boat rail is thereby held between the slot and the flange of the handle, such that the boat may be lifted and moved.

Abstract: A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

Abstract: A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

Abstract: The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

Abstract: The boat and boat handle of the present invention are cooperatively designed for automatic interlocking engagement and release upon manipulation by a user. The boat includes a side rail that is designed with a lip portion for engagement within a slot formed in the handle, and a handle contact surface for contacting a gripping block member of the handle. The handle includes at least one boat holding block that is formed with a boat lip holding slot therewithin. The handle also includes at least one boat gripping block that is rotatably engaged with the holding block, and which includes a frontwardly projecting rail gripping flange. When the boat lip is brought into the holding block slot, the gripping block is caused to rotate such that the flange is brought over the top of the rail. The boat rail is thereby held between the slot and the flange of the handle, such that the boat may be lifted and moved through movement of the handle.

Abstract: An apparatus for the in-situ cleaning of the interior surfaces of a processing chamber (14) and/or tooling or substrates disposed within said chamber where said chamber is composed substantially of dielectric material having at least one powered and one grounded electrode (30) formed from a thin film of conductive material deposited directly on the exterior surface of said chamber, a means for introducing gas (26) into the chamber, a means for establishing and maintaining a reduced pressure environment (22) within the chamber, and a supply of radio frequency power (32). A plasma is created in the chamber by the interaction of the RF field established in the chamber upon the application of RF power to the electrodes with the gas in the chamber, and the plasma creates gaseous species that etch unwanted deposits and/or contaminates from the interior surfaces of the chamber and/or the surfaces of tooling or substrates disposed in the chamber.

Abstract: An apparatus for the in-situ cleaning of Low Pressure Chemical Vapor Deposition tube chambers (32) or Reduced Pressure Epitaxy bell jar chambers (42) having a base member (22) to create a vacuum seal upon engagement with the loading end of the chamber, at least one powered electrode (62) which protrudes from the base member into the chamber, at least on grounded electrode (60) which also protrudes from the base member into the chamber, a means for introducing gas (92) into the chamber, and an electrical network (16) that creates a radio frequency electrical field between the powered electrode and the grounded electrode. A plasma is created in the chamber by the interaction of the gas and the RF field, and the plasma etches unwanted deposits from the inner wall of the chamber. Several different configurations of electrode structures are shown.

Abstract: A triode apparatus with magnetic enhancement for dry processing semiconductor wafers and the like. A conductive substantially cylindrical chamber contains a cathode that is connected to a first source of AC power. A wafer stage mounted on the inside of the chamber wall is connected to a second source of AC power. The chamber has means for connection to a reference voltage potential. Means for generating a magnetic field perpendicular to the electric field generated between the chamber walls and the cathode is also provided.