Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.

Abstract: To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw is induced in a filament on which silicon will be deposited to produce a rod. The flaw causes the grown rod to have a cleavage plane such that the rod will break in a controlled manner at a desired location. The flaw can be placed at a location selected such that breakage at the cleavage plane will produce long rods and thereby improve the yield of the rod growing process. Such a flaw will also have the effect of minimizing useable rod length losses due to spalling.

Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.

Abstract: To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw is induced in a filament on which silicon will bc deposited to produce a rod. The flaw causes the grown rod to have a cleavage plane such that the rod will break in a controlled manner at a desired location. The flaw can be placed at a location selected such that breakage at the cleavage plane will produce long rods and thereby improve the yield of the rod growing process Such a flaw will also have the effect of minimizing useable rod length losses due to spalling.

Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.

Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.

Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current is provided to the rods by a power supply, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, to concentrate at least 70% of the current in an annular region that is the outer 15% of a rod due to the “skin effect.

Abstract: Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.

Abstract: Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.

Abstract: A rotary position indicator for use with devices such as valves, electrical switches, and non-contact reed and proximity switches, which rotary position indicator includes a shaft rotatable about its longitudinal axis and includes a single plane adjustable cam bearing an external profile at its margin that is shaped to provide a camming portion for predetermined dwell and a camming portion for actuator of the device controlled thereby, which provides the option of adjusting the position of the cam relative to the shaft by the user manually shifting the cam in its plane to effect release of the cam relative to the shaft for rotation relative to the shaft to its new working position, with automatic releasable locking of said cam in its new working position then being effected.

Abstract: A hermetically sealed snap switch assembly involving a housing that includes a hermetically sealed snap switch chamber in which a projecting terminal type subminiature snap action switch is mounted in slip fit association with a similar number of depending electrically conductive open ended tubes that are adapted to, prior to use of the switch assembly involved, be respectively hermetically sealed to the switch terminal that is received in same, and be respectively electrically connected in suitable circuitry at the option of the installer, with the arrangement of the assembly being such that optionally a selected one of the depending tubes, prior to such hermetically sealing of same, may be employed for switch chamber purging and backfilling purposes, after which said sealing of same is effected. Also disclosed is a method of backfilling said switch chamber (using such backfilling option) with a switch life enhancing gas.

Abstract: Disclosed are .[.a.]. processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.