Abstract: A cable termination system and method include providing an outer socket having a frustum shaped socket interior tapering from a base to a top opening. The outer socket is comprised of two semicircular socket pieces, each forming a portion of a complete circumference of the outer socket. A plurality of elongate cable strands extend through the socket interior with individual strands circumferentially spaced to form a single layer of strands at the base opening. A frustoconical inner plug is inserted into the socket by a compressive force exceeding a maximum tensile force of the stranded cable for holding the cable in the socket without slippage when a tensile force is applied between the cable and the outer socket. The inner plug includes a plurality of longitudinally extending, laterally separate plug subassemblies.

Abstract: A cable termination system and method include providing an outer socket having a frustum shaped socket interior tapering from a base to a top opening. The outer socket is comprised of two semicircular socket pieces, each forming a portion of a complete circumference of the outer socket. A plurality of elongate cable strands extend through the socket interior with individual strands circumferentially spaced to form a single layer of strands at the base opening. A frustoconical inner plug is inserted into the socket by a compressive force exceeding a maximum tensile force of the stranded cable for holding the cable in the socket without slippage when a tensile force is applied between the cable and the outer socket. The inner plug includes a plurality of longitudinally extending, laterally separate plug subassemblies.

Abstract: A plasma processing system is provided, having processor integral cooling passages for reducing an operating temperature thereof during processing of a wafer by the system. Cooling medium inlets and outlets are connected to the cooling passages to permit circulation of a cooling medium through the cooling passages. The baffle plate comprises a generally planar, apertured, gas distribution central portion surrounded by a flange into both of which the cooling passages may extend. Further, the baffle plate may have a non-apertured plate overlying and covering apertures in a central portion of the baffle plate.

Abstract: A plasma processing system (10) is provided, having processor chamber walls (53) and/or a gas distribution or baffle plate (54) equipped with integral cooling passages (80, 156) for reducing an operating temperature thereof during processing of a wafer (18) by the system. Cooling medium inlets (158, 82) and outlets (160, 86) are connected to the cooling passages to permit circulation of a cooling medium through the cooling passages. Preferably, the chamber walls (53) and the gas distribution or baffle plate (54) are comprised of low-alloy anodized aluminum and the cooling passages are machined directly therein. The cooling medium may be either liquid (e.g., water) or gas (e.g., helium or nitrogen). The baffle plate (54) comprises a generally planar, apertured, gas distribution central portion (74) surrounded by a flange (78), into both of which the cooling passages may extend.

Abstract: A plasma processing system is provided, having processor integral cooling passages for reducing an operating temperature thereof during processing of a wafer by the system. Cooling medium inlets and outlets are connected to the cooling passages to permit circulation of a cooling medium through the cooling passages. The baffle plate comprises a generally planar, apertured, gas distribution central portion surrounded by a flange into both of which the cooling passages may extend. Further, the baffle plate may have a non-apertured plate overlying and covering apertures in a central portion of the baffle plate.

Abstract: A baffle plate assembly (12) is provided for distributing gas flow into an adjacent process chamber cavity (20) containing a semiconductor wafer to be processed. The baffle plate assembly (12) comprises a generally planar upper baffle plate (14) fixedly positioned above a generally planar lower baffle plate (16) and covered by a process chamber top wall (17). The top wall (17) and the lower baffle plate form a plenum therebetween, the plenum operating at a higher pressure than the process chamber cavity (20) during operation of the device, At least the lower baffle plate (16) has a pattern of apertures (30) formed therein for permitting gas to pass therethrough and into the wafer process chamber. The upper baffle plate (16) and the lower baffle plate (14) are positioned generally parallel to each other, and the upper baffle plate (14) is smaller than the lower baffle plate (16).

Abstract: A temperature control system (20, 22, 24) is provided for a plasma processing device (10). The plasma processing device (10) comprises a plasma generator (14) and a processing chamber (52) in communication with the plasma generator (14) such that plasma within the generator may pass into the chamber and react with the surface of a substrate (18) residing therein. The temperature control system (20, 22, 24) comprises (i) a radiant heater assembly (20) for heating the substrate (18), comprising a plurality of radiant heating elements (58) arranged in a plurality of zones (a-n), each zone comprising at least one heating element, and a focused reflector (56) for focusing radiant energy from the heating elements toward the substrate; (ii) a feedback mechanism (24) for providing a substrate temperature feedback signal (25); and (iii) a controller (22), including a P-I-D closed loop controller (80) and a lamp power controller (90).

Abstract: A thermocouple support arm assembly (20) is provided, comprising (i) an arm (28) extending longitudinally along a first axis (X) and having a thermocouple (30) extending therefrom; (ii) an anvil (40) supported by the arm (28) and at least partially occupying a plane defined by a second axis (Y) and a third axis (Z), the anvil positioned below the thermocouple; and (iii) a mounting mechanism (36) for mounting the anvil (40) on the arm (28) such that the anvil (40) is permitted three degrees of rotational freedom with respect to the arm along, respectively, axes X, Y and Z. When a substrate such as a semiconductor wafer is positioned above the thermocouple (30) to at least partially rest upon the thermocouple and the anvil (40), the anvil moves with respect to the arm (28) along the axes (X, Y, Z) to force the thermocouple into contact with the substrate.