Patents by Inventor David W. Minsek
David W. Minsek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9783901Abstract: A method of electroplating metal onto a transparent conductive oxide layer is described. The method comprises the steps of a) electroplating a zinc or zinc oxide seed layer directly onto the transparent conductive oxide layer and thereafter, b) electroplating one or more additional metal layers over the zinc layer. The one or more additional metal layers may include a cobalt strike layer electroplated over the zinc or zinc oxide seed layer and another metal layer such as copper, electroplated over the cobalt strike layer.Type: GrantFiled: March 11, 2014Date of Patent: October 10, 2017Inventor: David W. Minsek
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Patent number: 9443713Abstract: An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.Type: GrantFiled: July 1, 2014Date of Patent: September 13, 2016Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: David W. Minsek, Michael B. Korzenski, Martha M. Rajaratnam
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Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
Patent number: 9422513Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: GrantFiled: December 2, 2014Date of Patent: August 23, 2016Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, David W. Minsek -
Publication number: 20160152926Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: ApplicationFiled: February 8, 2016Publication date: June 2, 2016Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Patent number: 9256134Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: GrantFiled: March 25, 2014Date of Patent: February 9, 2016Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Publication number: 20150259816Abstract: A method of electroplating metal onto a transparent conductive oxide layer is described. The method comprises the steps of a) electroplating a zinc or zinc oxide seed layer directly onto the transparent conductive oxide layer and thereafter, b) electroplating one or more additional metal layers over the zinc layer. The one or more additional metal layers may include a cobalt strike layer electroplated over the zinc or zinc oxide seed layer and another metal layer such as copper, electroplated over the cobalt strike layer.Type: ApplicationFiled: March 11, 2014Publication date: September 17, 2015Applicant: MacDermid Acumen, Inc.Inventor: David W. Minsek
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METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION
Publication number: 20150094248Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: ApplicationFiled: December 2, 2014Publication date: April 2, 2015Inventors: Melissa K. RATH, David D. BERNHARD, Thomas H. BAUM, David W. MINSEK -
Patent number: 8956687Abstract: A method and composition for plating metal contacts on photovoltaic solar cells is described. The cell is immersed in an aqueous bath containing platable metal ions and a solubilizing agent for aluminum or aluminum alloy ions from the back side of the solar cell. The cell is then exposed to light, causing the two sides of the cell to become oppositely charged. The metal ions are plated without requiring an external electrical contact.Type: GrantFiled: November 20, 2012Date of Patent: February 17, 2015Inventors: David W. Minsek, Lev Taytsas
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Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
Patent number: 8951948Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: GrantFiled: June 7, 2006Date of Patent: February 10, 2015Assignee: Advanced Technology Materials, Inc.Inventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, David W. Minsek -
Publication number: 20150000697Abstract: An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.Type: ApplicationFiled: July 1, 2014Publication date: January 1, 2015Inventors: David W. Minsek, Michael B. Korzenski, Martha M. Rajaratnam
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Publication number: 20140213498Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: ApplicationFiled: March 25, 2014Publication date: July 31, 2014Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Patent number: 8765654Abstract: An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.Type: GrantFiled: April 11, 2011Date of Patent: July 1, 2014Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Michael B. Korzenski, Martha M. Rajaratnam
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Patent number: 8679734Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: GrantFiled: August 7, 2012Date of Patent: March 25, 2014Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Patent number: 8337942Abstract: A method and composition for plating metal contacts on photovoltaic solar cells is described. The cell is immersed in an aqueous bath containing platable metal ions and a solubilizing agent for aluminum or aluminum alloy ions from the back side of the solar cell. The cell is then exposed to light, causing the two sides of the cell to become oppositely charged. The metal ions are plated without requiring an external electrical contact.Type: GrantFiled: July 22, 2011Date of Patent: December 25, 2012Inventors: David W. Minsek, Lev Taytsas
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Publication number: 20120302483Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: ApplicationFiled: August 7, 2012Publication date: November 29, 2012Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: David W. Minsek, Melissa K. Rath, David Daniel Bernhard, Thomas H. Baum
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Patent number: 8236485Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.Type: GrantFiled: March 14, 2003Date of Patent: August 7, 2012Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Melissa K. Murphy, David Daniel Bernhard, Thomas H. Baum
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Publication number: 20110275175Abstract: A method and composition for plating metal contacts on photovoltaic solar cells is described. The cell is immersed in an aqueous bath containing platable metal ions and a solubilizing agent for aluminum or aluminum alloy ions from the back side of the solar cell. The cell is then exposed to light, causing the two sides of the cell to become oppositely charged. The metal ions are plated without requiring an external electrical contact.Type: ApplicationFiled: July 22, 2011Publication date: November 10, 2011Inventors: David W. Minsek, Lev Taytsas
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Patent number: 7994108Abstract: An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.Type: GrantFiled: January 9, 2006Date of Patent: August 9, 2011Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Weihua Wang, David D. Bernhard, Thomas H. Baum, Melissa K. Rath
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Publication number: 20110186086Abstract: An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.Type: ApplicationFiled: April 11, 2011Publication date: August 4, 2011Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: David W. Minsek, Michael B. Korzenski, Martha M. Rajaratnam
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Patent number: 7922824Abstract: An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.Type: GrantFiled: October 4, 2006Date of Patent: April 12, 2011Assignee: Advanced Technology Materials, Inc.Inventors: David W. Minsek, Michael B. Korzenski, Martha M. Rajaratnam