Patents by Inventor David W. Pitman

David W. Pitman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9093372
    Abstract: Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized with an ion implantation system for processing a substrate.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: July 28, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Richard M. White, Svetlana B. Radovanov, Kevin M. Daniels, Eric R. Cobb, David W. Pitman
  • Publication number: 20150179455
    Abstract: Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.
    Type: Application
    Filed: February 27, 2015
    Publication date: June 25, 2015
    Inventors: Bon-Woong Koo, Richard M. White, Svetlana B. Radovanov, Kevin M. Daniels, Eric R. Cobb, David W. Pitman
  • Patent number: 9064795
    Abstract: Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: June 23, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Richard M. White, Svetlana B. Radovanov, Kevin M. Daniels, Eric R. Cobb, David W. Pitman