Patents by Inventor David W. Shortt
David W. Shortt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240044799Abstract: Methods and systems for determining information for a specimen are provided. Certain embodiments relate to detecting photoluminescence for applications such as inspection and/or metrology of electro-optically active devices or advanced packaging devices. One embodiment of a system includes an illumination subsystem configured for directing light having one or more illumination wavelengths to a specimen and a detection subsystem configured for detecting photoluminescence from the specimen. The system also includes a computer subsystem configured for determining information for the specimen from output generated by the detection subsystem responsive to the detected photoluminescence.Type: ApplicationFiled: July 25, 2023Publication date: February 8, 2024Inventors: James Xu, David W. Shortt, Yiwu Ding
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Patent number: 10571407Abstract: Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.Type: GrantFiled: May 1, 2019Date of Patent: February 25, 2020Assignee: KLA-Tencor Corp.Inventors: Stefano Palomba, Pavel Kolchin, Mikhail Haurylau, Robert M. Danen, David W. Shortt
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Publication number: 20190257768Abstract: Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.Type: ApplicationFiled: May 1, 2019Publication date: August 22, 2019Inventors: Stefano Palomba, Pavel Kolchin, Mikhail Haurylau, Robert M. Danen, David W. Shortt
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Patent number: 10317347Abstract: Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.Type: GrantFiled: October 9, 2014Date of Patent: June 11, 2019Assignee: KLA-Tencor Corp.Inventors: Stefano Palomba, Pavel Kolchin, Mikhail Haurylau, Robert M. Danen, David W. Shortt
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Patent number: 9891177Abstract: A wafer scanning system includes imaging collection optics to reduce the effective spot size. Smaller spot size decreases the number of photons scattered by the surface proportionally to the area of the spot. Air scatter is also reduced. TDI is used to produce a wafer image based on a plurality of image signals integrated over the direction of linear motion of the wafer. An illumination system floods the wafer with light, and the task of creating the spot is allocated to the imaging collection optics.Type: GrantFiled: October 3, 2014Date of Patent: February 13, 2018Assignee: KLA-Tencor CorporationInventors: Jijen Vazhaeparambil, Guoheng Zhao, Daniel Kavaldjiev, Anatoly Romanovsky, Ivan Maleev, Christian Wolters, Stephen Biellak, Bret Whiteside, Donald Pettibone, Yung-Ho Alex Chuang, David W. Shortt
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Patent number: 9887076Abstract: A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a bulb-less gas containment structure, and a collector element arranged to focus illumination from the illumination source into the volume of gas in order to generate a plasma within the volume of gas contained within the bulb-less gas containment structure. Further, the plasma is generated within a concave region of the collector element, where the collector element includes an opening through the collector element for propagating a portion of a plume of the plasma from a first region of the bulb-less gas containment structure to a second region of the bulb-less gas containment structure, wherein the first region of the bulb-less gas containment structure and the second region of the bulb-less gas containment structure are at least partially separated by a surface of the collector element.Type: GrantFiled: July 11, 2016Date of Patent: February 6, 2018Assignee: KLA-Tencor CorporationInventors: Ilya Bezel, Anatoly Shchemelinin, Matthew Derstine, Kenneth P. Gross, David W. Shortt, Wei Zhao, Anant Chimmalgi, Jincheng Wang
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Patent number: 9846930Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.Type: GrantFiled: December 12, 2016Date of Patent: December 19, 2017Assignee: KLA-Tencor Corp.Inventors: Kenong Wu, Lisheng Gao, Grace Hsiu-Ling Chen, David W. Shortt
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Publication number: 20170091925Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.Type: ApplicationFiled: December 12, 2016Publication date: March 30, 2017Inventors: Kenong Wu, Lisheng Gao, Grace Hsiu-Ling Chen, David W. Shortt
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Patent number: 9558858Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.Type: GrantFiled: August 13, 2014Date of Patent: January 31, 2017Assignee: KLA-Tencor CorporationInventors: David W. Shortt, Steven R. Lange, Matthew Derstine, Kenneth P. Gross, Wei Zhao, Ilya Bezel, Anatoly Shchemelinin
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Patent number: 9552636Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.Type: GrantFiled: July 28, 2015Date of Patent: January 24, 2017Assignee: KLA-Tencor Corp.Inventors: Kenong Wu, Lisheng Gao, Grace Hsiu-Ling Chen, David W. Shortt
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Publication number: 20160322211Abstract: A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a plasma cell including a bulb for containing a volume of gas, a collector element arranged to focus illumination from the illumination source into the volume of gas in order to generate a plasma within the volume of gas contained within the bulb. Further, the plasma cell is disposed within a concave region of the collector element, where the collector element includes an opening for propagating a portion of a plume of the plasma to a region external to the concave region of the collect element.Type: ApplicationFiled: July 11, 2016Publication date: November 3, 2016Inventors: Ilya Bezel, Anatoly Shchemelinin, Matthew Derstine, Kenneth P. Gross, David W. Shortt, Wei Zhao, Anant Chimmalgi, Jincheng Wang
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Patent number: 9390902Abstract: A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a plasma cell including a bulb for containing a volume of gas, a collector element arranged to focus illumination from the illumination source into the volume of gas in order to generate a plasma within the volume of gas contained within the bulb. Further, the plasma cell is disposed within a concave region of the collector element, where the collector element includes an opening for propagating a portion of a plume of the plasma to a region external to the concave region of the collect element.Type: GrantFiled: March 25, 2014Date of Patent: July 12, 2016Assignee: KLA-Tencor CorporationInventors: Ilya Bezel, Anatoly Shchemelinin, Matthew Derstine, Kenneth P. Gross, David W. Shortt, Wei Zhao, Anant Chimmalgi, Jincheng Wang
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Publication number: 20160097727Abstract: A wafer scanning system includes imaging collection optics to reduce the effective spot size. Smaller spot size decreases the number of photons scattered by the surface proportionally to the area of the spot. Air scatter is also reduced. TDI is used to produce a wafer image based on a plurality of image signals integrated over the direction of linear motion of the wafer. An illumination system floods the wafer with light, and the task of creating the spot is allocated to the imaging collection optics.Type: ApplicationFiled: October 3, 2014Publication date: April 7, 2016Inventors: Jijen Vazhaeparambil, Guoheng Zhao, Daniel Kavaldjiev, Anatoly Romanovsky, Ivan Maleev, Christian Wolters, Stephen Biellak, Bret Whiteside, Donald Pettibone, Yung-Ho Alex Chuang, David W. Shortt
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Patent number: 9297769Abstract: The invention may be embodied in a time delay integration (TDI) based sensor wafer inspection system that introduces controlled blur into the sampled image to suppress high spectral frequencies and thereby mitigate the occurrence of aliasing in the sampled image. Image blur may be introduced in the scan direction by desynchronizing the image motion (scan rate) from the charge transfer rate within the TDI sensor (sample clock rate). The scan rate may be desynchronized from the TDI sample clock rate by altering the speed of wafer movement, the sample clock rate, or the magnification of the imaging optics. Image blur may be introduced in the cross-scan direction by imparting a small alignment difference between the direction of image motion (image scan direction) and the direction that charges transfer within the TDI sensor (sensor direction).Type: GrantFiled: February 2, 2015Date of Patent: March 29, 2016Assignee: KLA-Tencor CorporationInventors: Andrew V. Hill, David W. Shortt
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Publication number: 20160027165Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.Type: ApplicationFiled: July 28, 2015Publication date: January 28, 2016Inventors: Kenong Wu, Lisheng Gao, Grace Hsiu-Ling Chen, David W. Shortt
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Publication number: 20150377795Abstract: A system and method for inspecting a surface of a wafer. The system includes a source generating an optical beam at a deep ultraviolet wavelength; a solid immersion lens, receiving the optical beam, positioned such that the air gap between the lens and the wafer surface is less than the wavelength, an enhanced electric field being generated at the wafer surface, at least one particle on the wafer receiving the enhanced electric field generating scattered light; a detector receiving the scattered light and generating a corresponding electrical signal; and a processor receiving and analyzing the electrical signal.Type: ApplicationFiled: September 11, 2015Publication date: December 31, 2015Inventors: Guoheng Zhao, David W. Shortt
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Patent number: 9092846Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.Type: GrantFiled: January 31, 2014Date of Patent: July 28, 2015Assignee: KLA-Tencor Corp.Inventors: Kenong Wu, Lisheng Gao, Grace Hsiu-Ling Chen, David W. Shortt
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Publication number: 20150123014Abstract: Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.Type: ApplicationFiled: October 9, 2014Publication date: May 7, 2015Inventors: Stefano Palomba, Pavel Kolchin, Mikhail Haurylau, Robert M. Danen, David W. Shortt
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Publication number: 20150048741Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.Type: ApplicationFiled: August 13, 2014Publication date: February 19, 2015Inventors: David W. Shortt, Steven R. Lange, Matthew Derstine, Kenneth P. Gross, Wei Zhao, Ilya Bezel, Anatoly Shchemelinin
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Patent number: 8947521Abstract: The invention may be embodied in a time delay integration (TDI) based sensor wafer inspection system that introduces controlled blur into the sampled image to suppress high spectral frequencies and thereby mitigate the occurrence of aliasing in the sampled image. Image blur may be introduced in the scan direction by desynchronizing the image motion (scan rate) from the charge transfer rate within the TDI sensor (sample clock rate). The scan rate may be desynchronized from the TDI sample clock rate by altering the speed of wafer movement, the sample clock rate, or the magnification of the imaging optics. Image blur may be introduced in the cross-scan direction by imparting a small alignment difference between the direction of image motion (image scan direction) and the direction that charges transfer within the TDI sensor (sensor direction).Type: GrantFiled: August 8, 2012Date of Patent: February 3, 2015Assignee: KLA-Tencor CorporationInventors: Andrew V. Hill, David W. Shortt