Abstract: Improved circuitry for active matix image arrays which, in one application reduces the number of source or gate lines for a given number of pixels, and in another application extends the dynamic range of the imaging array without reducing the number of source or gate lines. Each circuit includes multiple electrodes per pixel and multiple thin film transistors for switching charge from the pixel electrodes to the data line.

Abstract: Improved circuitry for active matrix image arrays which, in one application reduces the number of source or gate lines for a given number of pixels, and in another application extends the dynamic range of the imaging array without reducing the number of source or gate lines. Each circuit includes multiple electrodes per pixel and multiple thin film transistors for switching charge from the pixel electrodes to the data line.

Abstract: A flat panel detector for radiation imaging includes an array of transistor switches each of which is associated with a pixel electrode. A radiation transducer including a top electrode and a radiation conversion layer is disposed over the array. Inhibiting mechanisms are positioned over dead zones between adjacent pixel electrodes to inhibit the accumulation of charge in the radiation conversion layer at the dead zones when the top electrode is biased and the flat panel detector is exposed to radiation. In one embodiment, the inhibiting mechanism is constituted by islands formed of semiconductor material between the array and the radiation transducer. Each island is positioned over a dead zone between adjacent pixel electrodes and contacts a pixel electrode to allow charges accumulated on the islands to drift to the pixel electrodes.

Abstract: An electromagnetic radiation imaging device comprising an energy absorbing layer overlying an array of thin film transistors (TFTs). each of the thin film transistors incorporates a dual gate. The lower gate provides row selection, while the upper gate of the same device modulates current conducted by the transistor. By utilizing dual gates, a reduction in the number of transistors is achieved over prior art imaging devices, thereby increasing production yield. Furthermore, the use of dual gate transistors provides increased versatility in choosing the bias point of the transistors.