Patents by Inventor David Walch

David Walch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DISTRIBUTED HIGH VOLTAGE JFET
    Publication number: 20070012958
    Abstract: A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
    Type: Application
    Filed: September 22, 2006
    Publication date: January 18, 2007
    Applicant: Texas Instruments Inc.
    Inventors: Philip Hower, David Walch, John Lin, Steven Merchant
  • Distributed high voltage JFET
    Publication number: 20050285157
    Abstract: A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
    Type: Application
    Filed: June 23, 2004
    Publication date: December 29, 2005
    Inventors: Philip Hower, David Walch, John Lin, Steven Merchant