Patents by Inventor David Walter Flynn
David Walter Flynn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10885953Abstract: A data buffer comprises data storage circuitry; input circuitry to input data to be stored by the data storage circuitry at a first operating voltage; output circuitry to output stored data from the data storage circuitry at a second operating voltage different to the first operating voltage; and control circuitry to control an operating voltage of the data storage circuitry to be substantially the first operating voltage during a data input operation by the input circuitry and to be substantially the second operating voltage during a data output operation by the output circuitry.Type: GrantFiled: November 30, 2016Date of Patent: January 5, 2021Assignee: ARM LimitedInventors: James Edward Myers, David Walter Flynn
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Patent number: 10664031Abstract: Broadly speaking, embodiments of the present techniques provide a voltage monitoring circuit for low power minimum-energy sensor nodes. The circuit comprises sensing circuitry to sense a monitored signal having a plurality of operating signal states; a first comparator having a first input for receiving an upper threshold signal; and a second comparator having a first input for receiving a lower threshold signal, the upper and lower threshold signals defining a range which includes at least one signal state of the plurality of operating states of the monitored signal, wherein the first and second comparators have a bias input for receiving a bias configuration setting, the bias configuration setting being selectable according to an operating signal state of the monitored signal.Type: GrantFiled: November 26, 2016Date of Patent: May 26, 2020Assignee: ARM LimitedInventors: Parameshwarappa Anand Kumar Savanth, Bal S. Sandhu, James Edward Myers, Alexander Stewart Weddell, David Walter Flynn
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Patent number: 10651683Abstract: An electronic device 50 has at least one harvesting unit 52 for harvesting power from ambient energy. At least one circuit 54, including processing circuitry 56, is supplied with power from the harvesting unit 52. Control circuitry 60 is provided to adjust at least one property of the processing circuitry 56 or the at least one harvesting unit 52 to reduce impedance mismatch between an output impedance of the harvesting unit 52 and an input impedance of the at least one circuit 54.Type: GrantFiled: May 11, 2015Date of Patent: May 12, 2020Assignee: ARM LimitedInventors: Parameshwarappa Anand Kumar Savanth, James Edward Myers, David Walter Flynn
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Patent number: 10394732Abstract: An interface device for a data processing system is provided. The interface device comprises first interface circuitry to receive incoming data and second interface circuitry to transmit processed data to a data store for storage. The interface device is provided with processing circuitry to generate the processed data from the incoming data wherein the processing carried out reduces the data in size. The processing circuitry is also responsive to at least one characteristic of the incoming data or the processed data to transmit a notification signal to a data processing component of the data processing system.Type: GrantFiled: July 26, 2016Date of Patent: August 27, 2019Assignee: ARM LimitedInventors: Parameshwarappa Anand Kumar Savanth, James Edward Myers, David Walter Flynn, Rohan Gaddh, Rohit Grover
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Patent number: 10354721Abstract: A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage bitcell has particular application as Static Random-Access Memory (SRAM) circuitry.Type: GrantFiled: April 9, 2018Date of Patent: July 16, 2019Assignee: ARM LimitedInventors: Parameshwarappa Anand Kumar Savanth, James Edward Myers, Pranay Prabhat, David Walter Flynn, Shidhartha Das, David Michael Bull
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Publication number: 20190164582Abstract: A data buffer comprises data storage circuitry; input circuitry to input data to be stored by the data storage circuitry at a first operating voltage; output circuitry to output stored data from the data storage circuitry at a second operating voltage different to the first operating voltage; and control circuitry to control an operating voltage of the data storage circuitry to be substantially the first operating voltage during a data input operation by the input circuitry and to be substantially the second operating voltage during a data output operation by the output circuitry.Type: ApplicationFiled: November 30, 2016Publication date: May 30, 2019Inventors: James Edward MYERS, David Walter FLYNN
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Patent number: 10299219Abstract: A data transfer system, a method of data transfer and a corresponding transmitter and receiver are disclosed. A communication protocol between the transmitter and receiver is defined using a set of valid transmission states for communication from the transmitter to the receiver and a set of valid acknowledgement states for transmission from the receiver to the transmitter. A Hamming distance between patterns of zeroes, and between patterns of ones, in valid states of each of these sets is at least one and the transmitter is arranged to transition between a number of transmission states in response to the reception of an acknowledgement state from the receiver which matches a transmission state it has sent to the receiver on a request bus. A communication protocol which is robust across a multi-voltage and/or clock domain interface is thus provided.Type: GrantFiled: May 27, 2016Date of Patent: May 21, 2019Assignee: ARM LimitedInventor: David Walter Flynn
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Patent number: 10209755Abstract: A system comprises a first domain 4 and second domain 6 which communicate via an interface 8. The first domain 4 transmits power state commands to the second domain 6 for controlling transitions of power states at the second domain 6. The power state commands include at least a power up command 50 for triggering a transition to a power up state and a power no-operation command 52 in response to which the second domain remains in the current one of the power states. The no-operation command 52 enables the second domain 6 to be left in either the power up state or a different power state even if the first domain 4 is powered down.Type: GrantFiled: January 30, 2017Date of Patent: February 19, 2019Assignee: ARM LimitedInventors: David Walter Flynn, Vasan Venkataraman
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Publication number: 20180233194Abstract: A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage bitcell has particular application as Static Random-Access Memory (SRAM) circuitry.Type: ApplicationFiled: April 9, 2018Publication date: August 16, 2018Inventors: Parameshwarappa Anand Kumar Savanth, James Edward Myers, Pranay Prabhat, David Walter Flynn, Shidhartha Das, David Michael Bull
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Publication number: 20180217648Abstract: A system comprises a first domain 4 and second domain 6 which communicate via an interface 8. The first domain 4 transmits power state commands to the second domain 6 for controlling transitions of power states at the second domain 6. The power state commands include at least a power up command 50 for triggering a transition to a power up state and a power no-operation command 52 in response to which the second domain remains in the current one of the power states. The no-operation command 52 enables the second domain 6 to be left in either the power up state or a different power state even if the first domain 4 is powered down.Type: ApplicationFiled: January 30, 2017Publication date: August 2, 2018Inventors: David Walter FLYNN, Vasan VENKATARAMAN
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Patent number: 10007314Abstract: Mechanisms are provided for energy management signalling with an apparatus for processing data, such as a system-on-chip integrated circuit (2). Processing circuitry (6, 8, 10) is coupled to consumer energy interface circuitry (14, 16, 18) which communicates with energy management circuitry (4). The energy management signals which are communicated include a static power consumption signal indicative of a level of power consumption which is independent of processing operations being performed and a dynamic power consumption signal indicative of a level of dynamic power consumption which is dependent upon the processing operations being performed.Type: GrantFiled: June 16, 2014Date of Patent: June 26, 2018Assignee: ARM LimitedInventors: David Walter Flynn, James Edward Myers
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Publication number: 20180150120Abstract: Broadly speaking, embodiments of the present techniques provide a voltage monitoring circuit for low power minimum-energy sensor nodes. The circuit comprises sensing circuitry to sense a monitored signal having a plurality of operating signal states; a first comparator having a first input for receiving an upper threshold signal; and a second comparator having a first input for receiving a lower threshold signal, the upper and lower threshold signals defining a range which includes at least one signal state of the plurality of operating states of the monitored signal, wherein the first and second comparators have a bias input for receiving a bias configuration setting, the bias configuration setting being selectable according to an operating signal state of the monitored signal.Type: ApplicationFiled: November 26, 2016Publication date: May 31, 2018Inventors: Parameshwarappa Anand Kumar Savanth, Bal S. Sandhu, James Edward Myers, Alexander Stewart Weddell, David Walter Flynn
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Patent number: 9940993Abstract: A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage bitcell has particular application as Static Random-Access Memory (SRAM) circuitry.Type: GrantFiled: April 7, 2016Date of Patent: April 10, 2018Assignee: ARM LimitedInventors: Parameshwarappa Anand Kumar Savanth, James Edward Myers, Pranay Prabhat, David Walter Flynn, Shidhartha Das, David Michael Bull
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Patent number: 9935634Abstract: An integrated circuit including a first voltage domain incorporates real time clock circuitry that communicates via communication circuitry with processing circuitry contained within a second voltage domain. The communication circuitry includes first parallel-to-serial conversion circuitry located within the first voltage domain, level shifting circuitry for passing serial signals between the voltage domains and second parallel-to-serial circuitry located in the second voltage domain.Type: GrantFiled: July 9, 2014Date of Patent: April 3, 2018Assignee: ARM LimitedInventors: David Walter Flynn, James Edward Myers
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Publication number: 20180032455Abstract: An interface device for a data processing system is provided. The interface device comprises first interface circuitry to receive incoming data and second interface circuitry to transmit processed data to a data store for storage. The interface device is provided with processing circuitry to generate the processed data from the incoming data wherein the processing carried out reduces the data in size. The processing circuitry is also responsive to at least one characteristic of the incoming data or the processed data to transmit a notification signal to a data processing component of the data processing system.Type: ApplicationFiled: July 26, 2016Publication date: February 1, 2018Inventors: Parameshwarappa Anand Kumar SAVANTH, James Edward MYERS, David Walter FLYNN, Rohan GADDH, Rohit GROVER
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Publication number: 20170294222Abstract: A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage bitcell has particular application as Static Random-Access Memory (SRAM) circuitry.Type: ApplicationFiled: April 7, 2016Publication date: October 12, 2017Inventors: Parameshwarappa Anand Kumar Savanth, James Edward Myers, Pranay Prabhat, David Walter Flynn, Shidhartha Das, David Michael Bull
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Patent number: 9720434Abstract: An electronic device 2 has circuitry 4 which operates in a first voltage domain 6 supplied with a first voltage level VDD1 and a reference voltage level. A voltage regulator 14 generates the first voltage level VDD1 from a second voltage level VDD2 higher than the first voltage level VDD1. At least one power gate 20, 30 is provided for selectively coupling the circuitry 4 to one of the first voltage level VDD1 or the reference level. The control signal 22 for the power gate 20, 30 is generated in a second voltage domain supplied with a higher voltage level VDD2 or VDD3 derived from the second voltage level VDD2 supplied to the voltage regulator 14. Hence, an existing high voltage source within the device 2 can be reused for applying a boosted voltage to power gates to improve efficiency of power gating.Type: GrantFiled: June 4, 2015Date of Patent: August 1, 2017Assignee: ARM LimitedInventors: James Edward Myers, David Walter Flynn, David William Howard
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Publication number: 20170201099Abstract: An electronic device 50 has at least one harvesting unit 52 for harvesting power from ambient energy. At least one circuit 54, including processing circuitry 56, is supplied with power from the harvesting unit 52. Control circuitry 60 is provided to adjust at least one property of the processing circuitry 56 or the at least one harvesting unit 52 to reduce impedance mismatch between an output impedance of the harvesting unit 52 and an input impedance of the at least one circuit 54.Type: ApplicationFiled: May 11, 2015Publication date: July 13, 2017Applicant: ARM LimitedInventors: Parameshwarappa Anand Kumar SAVANTH, James Edward MYERS, David Walter FLYNN
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Publication number: 20160374029Abstract: A data transfer system, a method of data transfer and a corresponding transmitter and receiver are disclosed. A communication protocol between the transmitter and receiver is defined using a set of valid transmission states for communication from the transmitter to the receiver and a set of valid acknowledgement states for transmission from the receiver to the transmitter. A Hamming distance between patterns of zeroes, and between patterns of ones, in valid states of each of these sets is at least one and the transmitter is arranged to transition between a number of transmission states in response to the reception of an acknowledgement state from the receiver which matches a transmission state it has sent to the receiver on a request bus. A communication protocol which is robust across a multi-voltage and/or clock domain interface is thus provided.Type: ApplicationFiled: May 27, 2016Publication date: December 22, 2016Inventor: David Walter FLYNN
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Patent number: 9496785Abstract: An integrated circuit has voltage generating circuitry for generating an on-chip voltage from a supply voltage in response to clock pulses. Clock control circuitry controls transmission of the clock pulses to the voltage generating circuitry. The clock control circuitry receives a reference voltage and a digital offset value comprising a binary numeric value identifying an offset. The clock control circuitry suppresses transmission of the clock pulses if the on-chip voltage is greater than the sum of the reference voltage and the offset identified by the digital offset value, to reduce power consumption. The offset can be tuned digitally to vary the average level of the on-chip voltage. A similar digital tuning mechanism may be used in a clocked comparator to compare a first voltage with a digitally tunable threshold voltage.Type: GrantFiled: October 26, 2015Date of Patent: November 15, 2016Assignee: ARM LimitedInventors: Parameshwarappa Anand Kumar Savanth, James Edward Myers, David Walter Flynn, Bal S. Sandhu