Abstract: An Enhanced Lift Assist Device is described. The device allows a user to lift and manipulate large, heavy or bulky items by applying force to the item as opposed to traditional control methods such as buttons. This force based system provides ease of movement of the item, making it appear much lighter than it actually is. The Enhanced Lift Assist Device also includes an adjustable base that allows for change of orientation of the device that may include leveling or self-leveling functionality, allowing the device to be operated in non-traditional environments that require leveling or operational adjustments for proper functioning.

Abstract: Aspects described herein may use machine learning models to predict one or more remediation actions to mitigate occurrence of an incident based upon previous incidents of an entity. A relationship between the compiled ownership data and development operations tools metric data and an occurrence of previous incidents is determined. A machine learning model predicts relationships between the occurrence of a previous incident and assets data. One or more remediation actions are assigned to an asset and a notification is outputted regarding the same.

Abstract: Aspects described herein may use machine learning models to predict one or more remediation actions to mitigate occurrence of an incident based upon previous incidents of an entity. Asset ownership data and development operations tools metric data are compiled and a relationship between the compiled data and an occurrence of previous incidents is determined. A machine learning model predicts relationships between the occurrence of a previous incident and assets data. One or more remediation actions are assigned to an asset and a notification is outputted regarding the same.

Abstract: Aspects described herein may use machine learning models to predict one or more remediation actions to mitigate reoccurrence of an incident that has become restored based upon previous incidents of an entity. Historical incident data is compiled into two incident datasets: one representative of incidents that were assigned a remediation action to mitigate reoccurrence of the incident, and a second representative of incidents that were not assigned a remediation action. A machine learning model matches relationships between data in the two datasets and outputs scores representative of similarities. Based on the scores, one or more remediation actions are mapped to an incident in the second dataset and the remediation action is performed for the incident.

Abstract: Aspects described herein may use machine learning models to predict one or more remediation actions to mitigate reoccurrence of an incident that has become restored based upon previous incidents of an entity. Historical incident data is compiled into two incident datasets: one representative of incidents that were assigned a remediation action to mitigate reoccurrence of the incident, and a second representative of incidents that were not assigned a remediation action. A machine learning model matches relationships between data in the two datasets and outputs scores representative of similarities. Based on the scores, one or more remediation actions are mapped to an incident in the second dataset and the remediation action is performed for the incident.

Abstract: Aspects described herein may use machine learning models to predict one or more remediation actions to mitigate occurrence of an incident based upon previous incidents of an entity. Asset ownership data and development operations tools metric data are compiled and a relationship between the compiled data and an occurrence of previous incidents is determined. A machine learning model predicts relationships between the occurrence of a previous incident and assets data. One or more remediation actions are assigned to an asset and a notification is outputted regarding the same.

Abstract: Aspects described herein may use machine learning models to predict one or more remediation actions to mitigate reoccurrence of an incident that has become restored based upon previous incidents of an entity. Historical incident data is compiled into two incident datasets: one representative of incidents that were assigned a remediation action to mitigate reoccurrence of the incident, and a second representative of incidents that were not assigned a remediation action. A machine learning model matches relationships between data in the two datasets and outputs scores representative of similarities. Based on the scores, one or more remediation actions are mapped to an incident in the second dataset and the remediation action is performed for the incident.

Abstract: This invention relates to a vapor or liquid phase reagent dispensing apparatus having a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of said metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: This invention relates to vapor phase reagent dispensing apparatus having a bubbler tube and also a metal seal aligned and in contact with the hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: This invention relates to a vapor phase reagent dispensing apparatus having a bubbler tube and also a metal seal aligned and in contact with the hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The apparatus further has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a sump cavity centrally located on a bottom wall member. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: This invention relates to a liquid phase reagent dispensing apparatus having a diptube and also a metal seal aligned and in contact with the hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The apparatus further has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a sump cavity centrally located on a bottom wall member. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: This invention relates to a vapor or liquid phase reagent dispensing apparatus having a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The apparatus also has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a sump cavity centrally located on a bottom wall member. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: This invention relates to organometallic compounds represented by the formula (L1)yM(L2)z-y wherein M is a Group 5 metal or a Group 6 metal, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer, e.g., a tungsten, tungsten nitride, tungsten carbide, or tungsten carbonitride layer, on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques.

Abstract: This invention relates to a vapor or liquid phase reagent dispensing apparatus having a diptube and also a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: This invention relates to a vapor or liquid phase reagent dispensing apparatus having a diptube and also a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (Cp(R?)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (Cp(R?)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

Abstract: This invention relates to a vapor or liquid phase reagent dispensing apparatus having a diptube and also a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (Cp(R?)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.

Abstract: This invention relates to organometallic precursor compounds represented by the formula (Cp(R?)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.