Abstract: The invention relates to a magnetic recording device comprising (a) a disk comprising a substrate, a metallic magnetic layer, a carbon layer and a lubricant layer; (b) a motor associated with a disk operable for rotating the disk; (c) a head supported on an air bearing slider for magnetically reading data to or magnetically writing data from the magnetic layer on the disk, the trailing surface of the slider coated with a multilayered film having low surface energy; and (d) an actuator connected to the slider for moving the head across the disk. The multilayered film on the trailing surface of the slider substantially reduces stiction of the slider.

Abstract: A method employs an RF magnetron sputtering system under specific process conditions for making shield and pole piece ferromagnetic layers of a read write magnetic head wherein the magnetic anisotropy HK of the ferromagnetic layers is substantially maintained without easy axes switching when annealed along their hard axes in the presence of a magnetic field (hard axis annealing).

Abstract: A specified amount of N2O or N2 is employed in a process gas of a DC magnetron for sputter depositing single or laminated films of NiFeCo—O—N or NiFeCo—N with a high uniaxial anisotropy HK after annealing these films along their hard axes. The films can be used for shield layers and/or pole piece layers in a magnetic head.

Abstract: A method employs an RF magnetron sputtering system under specific process conditions for making shield and pole piece ferromagnetic layers of a read write magnetic head wherein the magnetic anisotropy HK of the ferromagnetic layers is substantially maintained without easy axes switching when annealed along their hard axes in the presence of a magnetic field (hard axis annealing).

Abstract: A material is provided for the first shield and/or second shield/first pole piece layer of a merged MR head. The material employed is nickel cobalt (Ni70Co30) (wt. %) or a nickel iron cobalt alloy. In a second shield/first pole piece layer a further preferred embodiment is first and second layers wherein the first layer is nickel cobalt or a nickel iron cobalt alloy and the second layer is a laminate of a high magnetic material, such as iron nitride (FeN) laminated with aluminum oxide (Al2O3). The nickel cobalt or nickel iron cobalt alloy layers have a higher intrinsic anisotropic (HK) and can better withstand the processing fields employed during the various annealing steps in the construction of the head. Accordingly, the magnetic domains of the first and second shield layers do not change position from a desired parallel position to the ABS.

Abstract: A shield and/or pole piece layer for a magnetoresistive (MR) head made of a high moment Fe—Al—N—O laminated film is disclosed. The Fe—Al—N—O laminated film is manufactured using N2O as the reactive gas, making a laminated film that has a high intrinsic anisotropic (HK) and can better withstand the processing fields employed during the various processing and annealing steps in the construction of the head. Accordingly, the magnetic domains of the first shield layer, the second shield layer and/or the pole piece layers do not change position from a desired parallel position to the ABS. By maintaining their parallel position, applied fields during the operation of the head, such as from the write head or the media, do not move the domain walls around to cause Barkhausen noise.

Abstract: A high moment bilayer first pole piece layer of a write head has high magnetic stability for promoting read signal symmetry of a read sensor of a read head. The bilayer first pole piece layer has a first layer of nickel iron and a second layer of iron nitride. The iron nitride has a high magnetic moment for conducting more flux per volume than the nickel iron first layer. In a first aspect of the invention, the nickel iron first layer is highly stabilized by providing it with a negative magnetostriction so that a stress induced anisotropy (H.sub.K) supports an intrinsic uniaxial anisotropy (H.sub.K) of the nickel iron first layer. The iron nitride second layer is formed directly on the nickel iron first layer so that by magnetic coupling the iron nitride second layer has significantly improved magnetic stability.

Abstract: A magnetic head is provided which has first and second notches in a first pole piece layer adjacent first and second corners at the base of a gap layer wherein the gap layer does not undercut a base of a second pole tip. Field regions of the first pole piece layer which extend from the first and second notches slope upwardly from the notches for protecting components below the first pole piece layer. In one aspect of the invention a method of defining the gap layer sputter deposition and ion milling steps are employed to form a protective layer on first and second side walls of the second pole tip so that unwanted portions of the gap layer can be removed without undercutting the gap layer below the base of the second pole tip.

Abstract: A magnetic head is provided which has first and second notches in a first pole piece layer adjacent first and second corners at the base of a gap layer wherein the gap layer does not undercut a base of a second pole tip. Field regions of the first pole piece layer which extend from the first and second notches slope upwardly from the notches for protecting components below the first pole piece layer. In one aspect of the invention a method of defining the gap layer sputter deposition and ion milling steps are employed to form a protective layer on first and second side walls of the second pole tip so that unwanted portions of the gap layer can be removed without undercutting the gap layer below the base of the second pole tip.

Abstract: An improved process is provided for making a milling mask for milling notches in a first pole piece of a write head. The making of the milling mask involves two process steps, namely: (1) sputter depositing a layer of protective material on the top and side walls of a second pole tip and on flat portions of the first pole piece and (2) chemically etching the protective layer to remove the side wall portions of the protective layer leaving flat portions of the protective layer which constitute the milling mask. The etch rate of the side wall portions of the protective layer, as compared to the flat portions of the protective layer, are significantly increased by sputter depositing the protective layer in the presence of a reactive gas such as oxygen or nitrogen. The etch rate can be increased from 7:1 for a nonreactive gas such as argon to 24:1 with an argon and reactive gas mixture at a sputtering pressure of 18 mT.

Abstract: A magnetic head is provided which has first and second notches in a first pole piece layer adjacent first and second corners at the base of a gap layer wherein the gap layer does not undercut a base of a second pole tip. Field regions of the first pole piece layer which extend from the first and second notches slope upwardly from the notches for protecting components below the first pole piece layer. In one aspect of the invention a method of defining the gap layer sputter deposition and ion milling steps are employed to form a protective layer on first and second side walls of the second pole tip so that unwanted portions of the gap layer can be removed without undercutting the gap layer below the base of the second pole tip.

Abstract: Disclosed is a target for a ferromagnetic sputtering apparatus formed of a single piece of ferromagnetic target material. The target has a circular central area, an annular outer area, and a plurality of interconnected slots of specified width in the single piece extending in circumferential directions about the central area, forming a plurality of specified width radial gaps between the circular central area and the annular outer area. The slots of the sputtering target may be arranged to provide tabs crossing the slots to provide structural support to the specified width slots.

Abstract: A layered magnetic structure with a seed layer on a substrate and a bulk layer on the seed layer. The seed layer is a gas-doped sendust layer with a thickness of 100-800 .ANG.. The bulk layer is sendust with a thickness of 0.3-10.0 .mu.m. The seed layer and the bulk layer have different weight compositions.