Abstract: An inspection system and method for inspecting a sample surface, with a light source for generating a probe beam of light, a high NA lens for focusing the probe beam onto a sample surface, and collecting a scattered probe beam from the sample surface, optics for imaging the scattered probe beam onto a detector having a plurality of detector elements that generate output signals in response to the scattered probe beam, and a processor for analyzing the output signals to identify defects on the sample surface. Shaping the beam into a stripe shape increases intensity without sacrificing throughput. Offsetting the beam from the center of the high NA lens provides higher angle illumination. Crossed polarizers also improve signal quality. A homodyne or heterodyne reference beam (possibly using a frequency altering optical element) can be used to create an interferometric signal at the detector for improved signal to noise ratios.

Abstract: In one sense, the invention relates to a novel device for handling of substrates. The device has movable support arms configured to safely handle substrates, as well as gripping members for holding the substrate in place. The arms support the substrate, and the gripping members grab the substrate along its edges. The support arms then move away from the substrate. In this manner, the substrate is held in place by the grippers, along its edges. Because the support arms are moved away from the substrate surfaces, both sides of the substrate are thus exposed simultaneously, facilitating speed in processes such as inspection, and thus yielding greater process efficiency.

Abstract: Projection of a light field on a semiconductor wafer, the light field having uniform intensity and a predefined area. An aperture is placed within a light beam path, with a specifically designed three-dimensional profile, so as to shape the light beam in a specific manner. When this light beam is transmitted through the appropriate optics, its shape is altered so as to be projected onto the wafer as a circle (or any other desired shape). An optical mask is also employed, with a varying light attenuation to impart a varying intensity to the light path. The aperture shapes the light path, and the optical mask selectively attenuates it, in so that the end result is a uniformly-intense light field that illuminates only a specific predefined area of the wafer. Wafers can thus be illuminated while avoiding undesirable areas such as wafer edges, thus preventing over- or under-illumination.

Abstract: A high dynamic range and high precision broadband optical inspection system and method are provided. The system provides capability of optical inspection of patterned and unpatterned substrates in which a very large dynamic range with very high precision is desirable to provide detection of light scattering defects from sub micron to hundreds of microns in size. The system permits high throughput substrate inspection in which the sides, bevels and edges of the substrate may be rapidly or simultaneously inspected for defects.